HMC455LP3
/
455LP3E
v02.0605
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Typical Applications
This amplifier is ideal for high linearity applications:
• Multi-Carrier Systems
• GSM, GPRS & EDGE
• CDMA & WCDMA
Features
Output IP3: +42 dBm
Gain: 13 dB
56% PAE @ +28 dBm Pout
+19 dBm W-CDMA Channel Power @ -45 dBc ACP
3x3 mm QFN SMT Package
11
LINEAR & POWER AMPLIFIERS - SMT
• PHS
Functional Diagram
General Description
The HMC455LP3 & HMC455LP3E are high output
IP3 GaAs InGaP Heterojunction Bipolar Transistor
(HBT) ½ watt MMIC amplifiers operating between 1.7
and 2.5 GHz. Utilizing a minimum number of external
components the amplifier provides 13 dB of gain and
+28 dBm of saturated power at 56% PAE from a single
+5 Vdc supply voltage. The high output IP3 of +42
dBm coupled with the low VSWR of 1.4:1 make the
HMC455LP3 & HMC455LP3E ideal driver amplifiers for
PCS/3G wireless infrastructures. A low cost, leadless
3x3 mm QFN surface mount package (LP3) houses
the linear amplifier. The LP3 provides an exposed
base for excellent RF and thermal performance.
Electrical Specifi cations,
T
A
= +25° C, Vs= +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
37
24
11.5
Min.
Typ.
1.7 - 1.9
13.5
0.012
13
10
27
28.5
40
7
150
39
24.5
0.02
10.5
Max.
Min.
Typ.
1.9 - 2.2
13
0.012
15
18
27.5
28
42
6
150
37
23
0.02
9
Max.
Min.
Typ.
2.2 - 2.5
11.5
0.012
10
15
26
27
40
6
150
0.02
Max.
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
11 - 234
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC455LP3
/
455LP3E
v02.0605
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Broadband Gain & Return Loss
15
10
Gain vs. Temperature
20
17
5
RESPONSE (dB)
0
-5
-10
-15
8
-20
-25
1
1.5
2
FREQUENCY (GHz)
2.5
3
5
1.5
S21
S11
S22
GAIN (dB)
14
11
+25C
+85C
-40C
11
2.2
2.3
2.4
2.5
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
1.5
+25C
+85C
-40C
-5
RETURN LOSS (dB)
-10
-15
-20
-25
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
30
29
28
27
P1dB (dBm)
Psat vs. Temperature
30
28
Psat (dBm)
26
25
24
23
22
21
20
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
+25C
+85C
-40C
26
+25C
+85C
-40C
24
22
20
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 235
LINEAR & POWER AMPLIFIERS - SMT
HMC455LP3
/
455LP3E
v02.0605
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Output IP3 vs. Temperature
44
42
40
IP3 (dBm)
38
36
34
32
+25C
+85C
-40C
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
+25C
+85C
-40C
11
LINEAR & POWER AMPLIFIERS - SMT
30
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
0
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression @ 1.95 GHz
60
Pout (dBm), GAIN (dB), PAE (%)
50
40
30
20
10
0
-10
Pout
Gain
PAE
Power Compression @ 2.15 GHz
60
Pout (dBm), GAIN (dB), PAE (%)
50
40
30
20
10
0
-10
Pout
Gain
PAE
-5
0
5
10
15
20
-5
0
5
10
15
20
INPUT POWER (dBm)
INPUT POWER (dBm)
Reverse Isolation vs. Temperature
0
-5
ISOLATION (dB)
-10
-15
-20
-25
-30
1.5
Gain, Power & IP3 vs.
Supply Voltage @ 1.95 GHz
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
44
40
36
32
28
24
20
16
12
8
4.5
Gain
P1dB
Psat
IP3
+25C
+85C
-40C
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
4.7
5
Vs (V)
5.2
5.5
FREQUENCY (GHz)
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 236
HMC455LP3
/
455LP3E
v02.0605
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
ACPR vs. Supply Voltage @ 1.96 GHz
CDMA 2000, 9 Channels Forward
-40
ACPR vs. Supply Voltage @ 2.14 GHz
W-CDMA, 64 DPCH
-30
-35
-45
ACPR (dBc)
-50
4.5V
5V
5.5V
ACPR (dBc)
CDMA2000 Rev. 8
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
-40
-45
-50
-55
WCDMA
Frequency : 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
4.5V
5V
5.5V
-55
11
21
-60
-60
-65
5
7
9
11
13
15
17
19
21
Channel Output Power (dBm)
-65
5
7
9
11
13
15
17
19
Channel Output Power (dBm)
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vs = +5Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 16 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+6.0 Vdc
+25 dBm
150 °C
1.04 W
63 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Application Circuit
Recommended Component Values
TL1
Impedance
Physical Length
Electrical Length
50 Ohm
0.33”
34°
TL2
50 Ohm
0.18”
19°
TL3
50 Ohm
0.13”
13.5°
TL4
50 Ohm
0.04”
4°
L1
C1
C2, C3
C4
C5
8.2 nH
2.2 µF
3.0 pF
0.9 pF
100 pF
PCB Material: 10 mil Rogers 4350, Er = 3.48
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 237
LINEAR & POWER AMPLIFIERS - SMT
Source ACPR
Source ACPR
HMC455LP3
/
455LP3E
v02.0605
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Outline Drawing
11
LINEAR & POWER AMPLIFIERS - SMT
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
HMC455LP3
HMC455LP3E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
455
XXXX
455
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Pin Descriptions
Pin Number
1, 2, 4 - 9,
11 - 16
Function
N/C
Description
This pin may be connected to RF ground.
This pin is AC coupled.
An off chip series matching capacitor is required.
Interface Schematic
3
RFIN
10
RFOUT
RF output and DC Bias for the output stage.
GND
Package bottom must be connected to RF/DC ground.
11 - 238
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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