DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD16804
MONOLITHIC H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The
µ
PD16804 is a monolithic H bridge driver IC which uses low-ON resistance power MOS FETs in its driver stage.
This driver has a forward, reverse, and brake functions and is ideal for the driver circuit of motors for camera that
advance or rewind the film, and auto focusing or zooming.
This IC supports a drive current of up to 0.5 A (DC).
FEATURES
• High drive current
I
DR
= 3 A MAX. at PW
≤
200 ms (single pulse)
I
DR
= 0.5 A (DC)
• Low-ON resistance (sum of ON resistances of top
and bottom MOS FET)
R
ON
= 0.6
Ω
TYP. at I
DR
= 0.5 A
• Standby function that turns OFF charge pump circuit
• Compact surface mount package
16-pin plastic SOP (300 mil)
PIN CONFIGURATION (Top View)
C
2L
C
1H
C
1L
V
M
V
DD
IN
1
IN
2
1
2
3
4
5
6
7
8
16 C
2H
15 V
G
14 STBY
13 OUT2
12 PGND
11 OUT1
10 V
M
9
DGND
ORDERING INFORMATION
Part Number
Package
16-pin plastic SOP (300 mil)
INC
µ
PD16804GS
BLOCK DIAGRAM
R
1
: 50
Ω
(external resistor)
C
1
V
DD
C
2
V
G
C
3
C
1
= C
2
= C
3
: External capacitors (10 nF)
STBY
INC
IN1
IN2
Contorol
circuit
Charge pump
circuit
V
M
OUT1
Contorol
circuit
50 kΩ
DGND
PGND
Level shift
circuit
D MOS FET
H bridge circuit
Load motor
OUT2
The information in this document is subject to change without notice.
Document No. G11031EJ3V0DS00 (3rd edition)
Date Published July 1997 N
Printed in Japan
©
1997
µ
PD16804
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply voltage
Symbol
V
DD
V
M
V
G
pin applied voltage
Input voltage
H bridge drive current
V
G
V
IN
I
DR1
I
DR2
Power consumption
Operating temperature range
Operating junction temperature
Storage temperature range
P
T
T
A
T
J (MAX)
T
stg
DC
PW
≤
200 ms (single pulse)
T
A
= 25
°C
Conditions
Rating
–0.5 to +6.5/+8.0
Note
–0.5 to +6.5/+8.0
Note
15
–0.5 to V
DD
+ 0.5
0.5
3.0
1.0
–30 to +60
150
–55 to +150
V
V
A
A
W
°C
°C
°C
Unit
V
Note
V
DD
when the charge pump is used/V
DD
and V
M
when V
G
is supplied from an external source
RECOMMENDED OPERATING CONDITIONS
Ratings
Parameter
Supply voltage
Symbol
V
DD
Conditions
MIN.
During normal operation
All input pins are low
V
M
Charge pump capacitance
V
G
pin applied voltage
Note 1
Operating temperature
C
1
to C
3
V
G
T
A
Ambient temperature
11
–30
3.0
2.5
0.5
10
14
60
7.5
V
nF
V
°C
TYP.
MAX.
6.0/7.5
Note 2
V
Unit
Notes 1.
When a voltage is applied from an external source to the V
G
pin
2.
When the charge pump is used/when V
G
is supplied from an external source
2
µ
PD16804
ELECTRICAL SPECIFICATIONS (Unless otherwise specified, T
A
= 25
°
C, V
DD
= recommended
operating condition, V
M
= 0.5 to 7.5 V)
Ratings
Parameter
V
DD
pin current
Symbol
I
DD1
Conditions
MIN.
V
DD
= 5 V, T
A
= recommended
conditions
Control pins at high level
V
DD
= 5 V, T
A
= recommended
conditions
Control pins at low level
Control pins at low level
T
A
= recommended conditions
Control pins at low level
I
DR
= 0.5 A, V
DD
= V
M
= 5 V
T
A
= recommended condition
T
A
= recommended condition
V
DD
= V
M
= 5 V,
T
A
= recommended conditions
C
1
= C
2
= C
3
= 10 nF
I
DR
= 0.5 A
35
T
A
= recommended condition
25
50
0.5
V
DD
×
0.6
V
DD
×
0.2
1.0
10
5.0
65
75
0.6
TYP.
0.6
MAX.
2.0
mA
Unit
I
DD2
0.3
10
µ
A
V
M
pin current
I
M1
0.1
10
µ
A
µ
A
Ω
V
V
ms
I
M2
H bridge ON resistance
Note
Control pin high-level input voltage
Control pin low-level input voltage
Charge pump circuit turn-ON time
H bridge output circuit turn-ON time
H bridge output circuit turn-OFF time
Control pin input pull-down resistor
R
ON
V
IH
V
IL
t
ONG
t
ONH
t
OFFH
R
IND
1.0
0.8
µ
s
µ
s
kΩ
kΩ
Note
Sum of ON resistances of top and bottom MOS FETs
3
µ
PD16804
FUNCTION TABLE
Input Signal
Function
IN1
H
L
H
L
×
×
IN2
L
H
H
L
×
×
INC
H
H
H
H
L
×
STB
H
H
H
H
H
L
Forward mode
Reverse mode
Brake mode
Stop mode
Stop mode
Standby mode
Forward mode
V
M
Reverse mode
V
M
ON
OFF
OFF
ON
OUT1
OUT2
OUT1
OUT2
OFF
ON
ON
OFF
Brake mode
V
M
Stop mode
V
M
OFF
OFF
OFF
OFF
OUT1
OUT2
OUT1
OUT2
ON
ON
OFF
OFF
4
V
M
= 0.5 V to 7.5 V
V
DD
= 3.0 V to 6.0 V
C
1
= C
2
= C
3
= 10 nF
R
1
= 50
Ω
Note 2
C
1
C
2
C
3
DC-DC
convertor
Battery
V
DD
5
V
M
2
10
4
OSC
circuit
Charge pump circuit
V
M
C
4
Note 1
1 to 10
µ
F
11 OUT1
Control circuit
Level shift
circuit
13
OUT2
3
16
1
15
APPLICATION CIRCUIT 1
STBY 14
CPU
6
7
INC
8
IN1
IN2
D MOS FET
H bridge
circuit
M
Film
take-up motor
Pull-down resistor
50 kΩ TYP.
9
DGND
12
PGND
H
Notes 1.
It is recommended to connect a capacitor of 1 to
10
µ
F between V
M
and GND to protect the gate of
H
IN
1
L
the DMOS FET from surge voltage.
2.
Insert a resistor of 50 (±10)
Ω
to prevent malfunc-
tioning.
IN
2
L
Forward
mode
Brake
mode
Reverse
mode
Stop mode
µ
PD16804
5
MEMS传感器
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