Datasheet> 器件分类 > 分立半导体> 二极管> MBR60100PT-G

文档预览

MBR60100PT-G: 产品描述RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,80V V(RRM),TO-247VAR; 产品类别分立半导体二极管; 文件大小70KB，共3页; 制造商Comchip Technology; 官网地址http://www.comchiptech.com/; 标准

下载文档详细参数选型对比全文预览

MBR60100PT-G概述

RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,80V V(RRM),TO-247VAR

MBR60100PT-G规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	TO-3P, 3PIN
Reach Compliance Code	compli
ECCN代码	EAR99
其他特性	LOW POWER LOSS
应用	EFFICIENCY
配置	COMMON CATHODE, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	0.85 V
JESD-30 代码	R-PSFM-T3
最大非重复峰值正向电流	500 A
元件数量	2
相数	1
端子数量	3
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	30 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
最大重复峰值反向电压	100 V
最大反向电流	20000 µA
表面贴装	NO
技术	SCHOTTKY
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

Schottky Barrier Rectifier

MBR6050PT-G Thru. MBR60100PT-G

Reverse Voltage: 50 to 100V

Forward Current: 60.0A

RoHS Device

Features

-Metal of silicon rectifier, majority carrier conduction.

-Low power loss, high efficiency.

-High current capability, low forward voltage drop.

-Guardring for overvoltage protection.

-High surge capacity.

-For use in low voltage, high frequency inverters,

free wheeling,and polarity protection applications.

0.646(16.40)

0.626(15.90)

0.244(6.20)

0.224(5.70)

0.085(2.16)

0.075(1.90)

TO-3P

0.134(3.40)

0.114(2.90)

0.203(5.16)

0.193(4.90)

0.091(2.30)

0.078(1.97)

0.858(21.80)

0.819(20.80)

Mechanical Data

-Epoxy: UL 94-V0 rate flame retardant.

-Case: JEDEC TO-3P/TO-247AD, molded plastic body

-Polarity: As marked on the body.

-Mounting position: Any

-Weight: 5.6 grams

0.224(5.70)

0.205(5.20)

0.161(4.10)

0.138(3.50)

0.795(20.20)

0.776(19.70)

0.095(2.40)

0.083(2.10)

0.127(3.22)

0.117(2.97)

0.086(2.18)

0.076(1.93)

0.030(0.76)

0.020(0.51)

0.048(1.22)

0.044(1.12)

Dimensions in inches and (millimeter)

Maximum Ratings And Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Rectified Current

@Tc=125°C

Symbol

RRM

RMS

(AV)

MBR6050

PT-G

MBR6060

PT-G

MBR60100

PT-G

Unit

Peak Forward Surage Current , 8.3ms Single

Half Sine-Wave Super Imposed On Rated

Load (JEDEC Method)

Maximum Instantaneous

Forward Voltage at

(Note 1)

Maximum DC Reverse

CurrentAt Rate DC

Blocking Voltage

=30A, T

=25°C

=30A, T

=125°C

=25°C

=100°C

FSM

θJC

STG

500

0.72

0.62

1.0

100

1.2

-65 to +150

-65 to +175

°C/W

°C

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

Notes:

1. Pulse Test: 300us pulse width,1% duty cycle.

2. Thermal resistance from junction to case per leg.

Company reserves the right to improve product design , functions and reliability without notice.

QW-BB054

REV: A

Page 1

Comchip Technology CO., LTD.

MBR60100PT-G相似产品对比

	MBR60100PT-G	MBR6060PT-G	MBR6050PT-G
描述	RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,80V V(RRM),TO-247VAR	RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,60V V(RRM),TO-247VAR	RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,80V V(RRM),TO-247VAR
是否Rohs认证	符合	符合	符合
包装说明	TO-3P, 3PIN	R-PSFM-T3	R-PSFM-T3
Reach Compliance Code	compli	compli	compli
ECCN代码	EAR99	EAR99	EAR99
其他特性	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS
应用	EFFICIENCY	EFFICIENCY	EFFICIENCY
配置	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	0.85 V	0.75 V	0.75 V
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
最大非重复峰值正向电流	500 A	500 A	500 A
元件数量	2	2	2
相数	1	1	1
端子数量	3	3	3
最高工作温度	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C
最大输出电流	30 A	30 A	30 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
最大重复峰值反向电压	100 V	60 V	50 V
最大反向电流	20000 µA	20000 µA	20000 µA
表面贴装	NO	NO	NO
技术	SCHOTTKY	SCHOTTKY	SCHOTTKY
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
厂商名称	-	Comchip Technology	Comchip Technology

MBR60100PT-G

MBR60100PT-G概述

MBR60100PT-G规格参数

文档预览

MBR60100PT-G相似产品对比

推荐资源