5962-9322502MYX概述

Standard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28

5962-9322502MYX规格参数

参数名称	属性值
零件包装代码	QLCC
包装说明	QCCN,
针数	28
Reach Compliance Code	unknow
ECCN代码	3A001.A.2.C
最长访问时间	35 ns
JESD-30 代码	R-CQCC-N28
内存密度	262144 bi
内存集成电路类型	STANDARD SRAM
内存宽度	4
功能数量	1
端子数量	28
字数	65536 words
字数代码	64000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	64KX4
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	QCCN
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
并行/串行	PARALLEL
认证状态	Not Qualified
筛选级别	MIL-STD-883
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子形式	NO LEAD
端子位置	QUAD
Base Number Matches	1

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5962-9322502MYX相似产品对比

	5962-9322502MYX	5962-9322501MXX	5962-9322501MYX	5962-9322503MYX	5962-9322503MXX	5962-8868102LX	5962-9322502MXX	5962-8868101LX
描述	Standard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 64KX4, 45ns, CMOS, CDIP28, CERAMIC, DIP-28	Standard SRAM, 64KX4, 45ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 64KX4, 25ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 64KX4, 25ns, CMOS, CDIP28, CERAMIC, DIP-28	Standard SRAM, 64KX4, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24	Standard SRAM, 64KX4, 35ns, CMOS, CDIP28, CERAMIC, DIP-28	Standard SRAM, 64KX4, 35ns, CMOS, CDIP24, CERAMIC, DIP-24
零件包装代码	QLCC	DIP	QLCC	QLCC	DIP	DIP	DIP	DIP
包装说明	QCCN,	DIP,	QCCN,	QCCN,	DIP,	DIP, DIP24,.3	DIP,	DIP, DIP24,.3
针数	28	28	28	28	28	24	28	24
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknown	unknown	unknown
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
最长访问时间	35 ns	45 ns	45 ns	25 ns	25 ns	45 ns	35 ns	35 ns
JESD-30 代码	R-CQCC-N28	R-GDIP-T28	R-CQCC-N28	R-CQCC-N28	R-GDIP-T28	R-CDIP-T24	R-GDIP-T28	R-GDIP-T24
内存密度	262144 bi	262144 bi	262144 bi	262144 bi	262144 bi	262144 bit	262144 bit	262144 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	4	4	4	4	4	4	4	4
功能数量	1	1	1	1	1	1	1	1
端子数量	28	28	28	28	28	24	28	24
字数	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
字数代码	64000	64000	64000	64000	64000	64000	64000	64000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	64KX4	64KX4	64KX4	64KX4	64KX4	64KX4	64KX4	64KX4
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
封装代码	QCCN	DIP	QCCN	QCCN	DIP	DIP	DIP	DIP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	IN-LINE	CHIP CARRIER	CHIP CARRIER	IN-LINE	IN-LINE	IN-LINE	IN-LINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
筛选级别	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-STD-883
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	NO	YES	YES	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	NO LEAD	THROUGH-HOLE	NO LEAD	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	QUAD	DUAL	QUAD	QUAD	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1	1	1	1	1

5962-9322502MYX

5962-9322502MYX概述

5962-9322502MYX规格参数

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5962-9322502MYX相似产品对比

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