电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MBR10150CTC0

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-220AB,
产品类别分立半导体    二极管   
文件大小186KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 选型对比 全文预览

MBR10150CTC0概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-220AB,

MBR10150CTC0规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.98 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流120 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压150 V
最大反向电流100 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

MBR10150CTC0文档预览

MBR1035CT - MBR10200CT
Taiwan Semiconductor
CREAT BY ART
10A, 35V - 200V Dual Common Cathode Schottky Rectifiers
FEATURES
- Low power loss, high efficiency
- Guard ring for over-voltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
TO-220AB
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.88 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
MBR
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated V
R
, Square Wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
= 5 A, T
J
=25°C
I
F
= 5 A, T
J
=125°C
I
F
= 10 A, T
J
=25°C
I
F
= 10 A, T
J
=125°C
Maximum reverse current @ rated V
R
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
1
0.70
V
F
0.57
0.80
0.67
I
R
dV/dt
R
θJC
T
J
T
STG
15
0.80
0.65
0.90
0.75
0.1
10
10000
1.5
- 55 to +150
- 55 to +150
2
5
1035
CT
35
24
35
MBR
1045
CT
45
31
45
MBR
1050
CT
50
35
50
MBR
1060
CT
60
42
60
10
10
120
0.5
0.85
0.75
0.95
0.85
0.88
0.78
0.98
0.88
mA
V/μs
°C/W
°C
°C
V
MBR
CT
90
63
90
MBR
CT
100
70
100
MBR
CT
150
105
150
MBR
UNIT
V
V
V
A
A
A
A
CT
200
140
200
1090 10100 10150 10200
Version: N1512
MBR1035CT - MBR10200CT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBR10xxCT
(Note 1)
*: Optional available
PART NO.
SUFFIX
H
PACKING CODE
C0
PACKING CODE
SUFFIX
G
(*)
PACKAGE
TO-220AB
PACKING
50 / Tube
Note 1: "xx" defines voltage from 35V (MBR1035CT) to 200V (MBR10200CT)
EXAMPLE
EXAMPLE
PART NO.
MBR1060CTHC0G
PART NO.
MBR1060CT
PART NO.
SUFFIX
H
PACKING CODE
C0
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
12
10
8
6
4
2
0
0
50
100
150
Resistive or
inductive load
with heat sink
180
150
120
90
60
30
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms single half sine wave
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
AVERAGE FORWARD
A
CURRENT (A)
CASE TEMPERATURE (
°
C)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
1000
Pulse width=300μs
1% duty cycle
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
100
MBR1050CT-1060CT
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
10
T
J
=125°C
1
T
J
=75°C
0.1
10
MBR1035CT-1045CT
MBR1090CT-10100CT
1
MBR10150-10200CT
0.01
T
J
=25°C
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
Version: N1512
MBR1035CT - MBR10200CT
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
FIG. 6 TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
10000
JUNCTION CAPACITANCE (pF)
A
f=1.0MHz
Vsig=50mVp-p
100
TRANSIENT THERMAL
IMPEDANCE (°C/W)
10
1000
1
100
0.1
1
10
100
0.1
0.01
0.1
1
T-PULSE DURATION. (s)
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
TO-220AB
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
Unit (mm)
Min
-
2.62
2.80
0.68
3.54
14.60
13.19
2.41
4.42
1.14
5.84
2.20
0.35
Max
10.50
3.44
4.20
0.94
4.00
16.00
14.79
2.67
4.76
1.40
6.86
2.80
0.64
Unit (inch)
Min
-
0.103
0.110
0.027
0.139
0.575
0.519
0.095
0.174
0.045
0.230
0.087
0.014
Max
0.413
0.135
0.165
0.037
0.157
0.630
0.582
0.105
0.187
0.055
0.270
0.110
0.025
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Version: N1512
MBR1035CT - MBR10200CT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: N1512

MBR10150CTC0相似产品对比

MBR10150CTC0 MBR10100CTC0 MBR10200CTC0
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-220AB, Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB,
是否Rohs认证 符合 符合 符合
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compliant compliant compli
ECCN代码 EAR99 EAR99 EAR99
其他特性 LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
应用 EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 CATHODE CATHODE CATHODE
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.98 V 0.95 V 0.98 V
JEDEC-95代码 TO-220AB TO-220AB TO-220AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
最大非重复峰值正向电流 120 A 120 A 120 A
元件数量 2 2 2
相数 1 1 1
端子数量 3 3 3
最高工作温度 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C
最大输出电流 5 A 5 A 5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 150 V 100 V 200 V
最大反向电流 100 µA 100 µA 100 µA
表面贴装 NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE
德州仪器:面向工业PAC的C6-Integra(DSPARM)解决方案(三)
http://player.youku.com/player.php/sid/XMzQwMDk3MDg4/v.swf...
德仪DSP新天地 DSP 与 ARM 处理器
打样怎么这么贵!!
117001 万一板子有问题,这不是打水漂吗!117002...
qinkaiabc 聊聊、笑笑、闹闹
学习嵌入式的一点建议
1、学习linux 根据我在论坛的了解,我选择学习嵌入式linux,刚好我们学校也重视嵌入式linux,从实验室到课程安排都是关于嵌入式linux方面,天时地利!这里我把学习linux的经验和教训说说。 ......
maker 嵌入式系统
TI 单电源运放中文培训资料
我们经常看到很多非常经典的运算放大器应用图集,但是他们都建立在双电源的基 础上,很多时候,电路的设计者必须用单电源供电,但是他们不知道该如何将双电源的 电路转换成单电源电路。 在设 ......
qwqwqw2088 模拟与混合信号
求助:关于PROTEL关闭后出现.DDB文件的问题
用PROTEL打开.sch文件的时候,每次关闭的时候总能生成一个.DDB的文件。 如图中:Sheet1.sch为要打开的文件,第一次关闭后出现Sheet1.ddb,第二次关闭后出现Sheet11.ddb,第三次关闭后出现Sheet12 ......
lzcqust PCB设计
UPS电源的分类与特点
目前,可供用户选择的UPS品种很多,但我们一般所指的UPS电源大都为静态变换式,它可分为:后备式、在线式、在线互动式三大类。后备式UPS电源:在市电正常供电时,市电通过交流旁路通道再经 ......
锐特0086 电源技术

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 205  786  1878  874  978  5  16  38  18  20 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved