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HN1C03FUTE85R

产品描述For Muting And Switching Applications
产品类别分立半导体    晶体管   
文件大小306KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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HN1C03FUTE85R概述

For Muting And Switching Applications

HN1C03FUTE85R规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknow
ECCN代码EAR99
最大集电极电流 (IC)0.3 A
基于收集器的最大容量7 pF
集电极-发射极最大电压20 V
配置SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)200
JESD-30 代码R-PDSO-G6
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)30 MHz
VCEsat-Max0.1 V

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HN1C03F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C03F
For Muting And Switching Applications
Unit in mm
Including two devices in SM6 (Super mini type with 6 leads)
High emitter-base voltage: V
EBO
= 25V (min)
High reverse h
FE
: reverse h
FE
= 150 (typ.)(V
CE
=−2V, I
C
=−4mA)
Low on resistance: R
ON
= 1Ω (typ.)(IB = 5mA)
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
50
20
25
300
60
300
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
2-3N1A
TOSHIBA
Weight: 0.015g (typ.)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Note:
1
2007-11-01

 
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