电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MT48H8M32LFF5-8IT

产品描述Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90
产品类别存储    存储   
文件大小2MB,共75页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
下载文档 详细参数 选型对比 全文预览

MT48H8M32LFF5-8IT概述

Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90

MT48H8M32LFF5-8IT规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Micron Technology
零件包装代码BGA
包装说明8 X 13 MM, VFBGA-90
针数90
Reach Compliance Codenot_compliant
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间7 ns
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)125 MHz
I/O 类型COMMON
交错的突发长度1,2,4,8
JESD-30 代码R-PBGA-B90
JESD-609代码e0
长度13 mm
内存密度268435456 bit
内存集成电路类型SYNCHRONOUS DRAM
内存宽度32
功能数量1
端口数量1
端子数量90
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织8MX32
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装等效代码BGA90,9X15,32
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)235
电源1.8 V
认证状态Not Qualified
刷新周期4096
座面最大高度1 mm
自我刷新YES
连续突发长度1,2,4,8,FP
最大待机电流0.00001 A
最大压摆率0.21 mA
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度8 mm

文档预览

下载PDF文档
256Mb: x32 Mobile SDRAM
Features
Mobile SDRAM
MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks
For the latest data sheet, refer to Micron’s Web site:
www.micron.com/products/dram/mobile
Features
Low voltage power supply
Partial array self refresh power-saving mode
Temperature Compensated Self Refresh (TCSR)
Deep power-down mode
Programmable output drive strength
Fully synchronous; all signals registered on positive
edge of system clock
Internal pipelined operation; column address can
be changed every clock cycle
Internal banks for hiding row access/precharge
Programmable burst lengths: 1, 2, 4, 8, or full page
Auto precharge, includes concurrent auto
precharge, and auto refresh modes
Self-refresh mode; standard and low power
64ms, 4,096-cycle refresh
LVTTL-compatible inputs and outputs
Commercial and industrial temperature ranges
Supports CAS latency of 1, 2, 3
Options
• V
DD
/V
DD
Q
• 3.3V/3.3V
• 2.5V/2.5V
• 1.8V/1.8V
• Configurations
• 8 Meg x 32 (2 Meg x 32 x 4 banks)
• Package/Ballout
• 90-ball VFBGA (8mm x 13mm)
(Standard)
• 90-ball VFBGA (8mm x 13mm)
(Lead-free)
• Timing (Cycle Time)
• 7.5ns @ CL = 3 (133 MHz)
• 7.5ns @ CL = 2 (104 MHz)
• 8ns @ CL = 3 (125 MHz)
• 8ns @ CL = 2 (104 Mhz)
• 10ns @ CL = 3 (100 MHz)
• 10ns @ CL = 2 (83 Mhz)
• Operating Temperature Range
• Commercial (0° to +70°C)
• Industrial (-40°C to +85°C)
Marking
LC
V
H
8M32
F5
B5
-75
-75
-8
-8
-10
-10
None
IT
Table 1: Addressing
8 Meg x 32
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
2 Meg x 32 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
Table 2: Key Timing Parameters
CL = CAS (READ) latency
Speed
Grade
-75
-8
-10
-75
-8
-10
Clock
Frequency
133 MHz
125 MHz
100 MHz
133 MHz
104 MHz
83 MHz
Access Time
CL = 2
7ns
8ns
8ns
CL = 3
6ns
7ns
7ns
-
Setup
Time
2.5ns
2.5ns
2.5ns
2.5ns
2.5ns
2.5ns
Hold
Time
1ns
1ns
1ns
1ns
1ns
1ns
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_1.fm - Rev. G 6/05
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT48H8M32LFF5-8IT相似产品对比

MT48H8M32LFF5-8IT MT48LC8M32LFB5-8 MT48LC8M32LFF5-8IT MT48V8M32LFB5-8 MT48V8M32LFB5-8IT MT48LC8M32LFB5-8IT MT48H8M32LFF5-10IT
描述 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90
是否Rohs认证 不符合 符合 不符合 符合 符合 符合 不符合
厂商名称 Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
零件包装代码 BGA BGA BGA BGA BGA BGA BGA
包装说明 8 X 13 MM, VFBGA-90 VFBGA, BGA90,9X15,32 8 X 13 MM, VFBGA-90 VFBGA, BGA90,9X15,32 VFBGA, BGA90,9X15,32 VFBGA, BGA90,9X15,32 8 X 13 MM, VFBGA-90
针数 90 90 90 90 90 90 90
Reach Compliance Code not_compliant unknown unknown unknown unknown unknown not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 7 ns 7 ns 7 ns 7 ns 7 ns 7 ns 7 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz 100 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON
交错的突发长度 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 代码 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90
JESD-609代码 e0 e1 e0 e1 e1 e1 e0
长度 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm
内存密度 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit
内存集成电路类型 SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
内存宽度 32 32 32 32 32 32 32
功能数量 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1
端子数量 90 90 90 90 90 90 90
字数 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words
字数代码 8000000 8000000 8000000 8000000 8000000 8000000 8000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 70 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C - -40 °C - -40 °C -40 °C -40 °C
组织 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VFBGA VFBGA VFBGA VFBGA VFBGA VFBGA VFBGA
封装等效代码 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度) 235 260 235 260 260 260 235
电源 1.8 V 3.3 V 3.3 V 2.5 V 2.5 V 3.3 V 1.8 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 4096 4096 4096 4096 4096 4096 4096
座面最大高度 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
自我刷新 YES YES YES YES YES YES YES
连续突发长度 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
最大待机电流 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A
最大压摆率 0.21 mA 0.255 mA 0.255 mA 0.255 mA 0.255 mA 0.255 mA 0.17 mA
最大供电电压 (Vsup) 1.9 V 3.6 V 3.6 V 2.7 V 2.7 V 3.6 V 1.9 V
最小供电电压 (Vsup) 1.7 V 3 V 3 V 2.3 V 2.3 V 3 V 1.7 V
标称供电电压 (Vsup) 1.8 V 3.3 V 3.3 V 2.5 V 2.5 V 3.3 V 1.8 V
表面贴装 YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb)
端子形式 BALL BALL BALL BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 30 30 30 30 30 30 30
宽度 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1933  2620  271  435  2392  1  26  57  7  3 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved