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MB81F643242B-10LLFN: 产品描述2MX32 SYNCHRONOUS DRAM, 6ns, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86; 产品类别存储存储; 文件大小867KB，共46页; 制造商FUJITSU(富士通); 官网地址http://edevice.fujitsu.com/fmd/en/index.html

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MB81F643242B-10LLFN概述

2MX32 SYNCHRONOUS DRAM, 6ns, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86

MB81F643242B-10LLFN规格参数

参数名称	属性值
Objectid	1491416310
零件包装代码	TSOP2
包装说明	TSOP2,
针数	86
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	6 ns
JESD-30 代码	R-PDSO-G86
长度	22.22 mm
内存密度	67108864 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	32
功能数量	1
端口数量	1
端子数量	86
字数	2097152 words
字数代码	2000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	2MX32
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
认证状态	Not Qualified
座面最大高度	1.2 mm
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
宽度	10.16 mm

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-11051-1E

MEMORY

CMOS

512 K

32 BIT

SYNCHRONOUS DYNAMIC RAM

MB81F643242B

-70/-80/-10/-70L/-80L/-10L/-70LL/-80LL/-10LL

CMOS 4-Bank

524,288-Word

32 Bit

Synchronous Dynamic Random Access Memory

DESCRIPTION

The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing

67,108,864 memory cells accessible in a 32-bit format. The MB81F643242B features a fully synchronous

operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which

enables high performance and simple user interface coexistence. The MB81F643242B SDRAM is designed to

reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing

constraints, and may improve data bandwidth of memory as much as 5 times more than a standard DRAM.

The MB81F643242B is ideally suited for workstations, personal computers, laser printers, high resolution graphic

adapters/accelerators and other applications where an extremely large memory and bandwidth are required and

where a simple interface is needed.

PRODUCT LINE & FEATURES

Parameter

CL - t

RCD

- t

Clock Frequency

Burst Mode Cycle Time

Access Time from Clock

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

Reference

Value@ 67 MHz,

-70/-70L/-70LL

-80/-80L/-80LL

-10/-10L/-10LL

CL=3

2 - 2 - 2 clk min.

3 - 3 - 3 clk min.

143 MHz max.

125 MHz max.

100 MHz max.

67 MHz max.

10 ns min.

12 ns min.

15 ns min.

20 ns min.

7 ns min.

8 ns min.

10 ns min.

15 ns min.

6 ns max.

170 mA max.

150 mA max.

125 mA max.

105 mA max.

2 mA max.(std version) / 1 mA max.(L,LL version)

2 mA max.(std. version) / 0.5 mA max.(L version) / 0.1mA max.(@45°C LL version)

MB81F643242B

Operating Current

Power Down Mode Current (I

CC2P

)

Self Refresh Current (I

CC6

)

•

Single +3.3 V Supply ±0.3 V tolerance

LVTTL compatible I/O interface

4 K refresh cycles every 64 ms

Four bank operation

Burst read/write operation and burst

read/single write operation capability

• Programmable burst type, burst length, and

CAS latency

• Auto-and Self-refresh (every 15.6

µs)

• CKE power down mode

• Output Enable and Input Data Mask

MB81F643242B-10LLFN相似产品对比

	MB81F643242B-10LLFN	MB81F643242B-80LLFN	MB81F643242B-80LFN	MB81F643242B-80FN	MB81F643242B-70LFN	MB81F643242B-70LLFN
描述	2MX32 SYNCHRONOUS DRAM, 6ns, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86	2MX32 SYNCHRONOUS DRAM, 6ns, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86	2MX32 SYNCHRONOUS DRAM, 6ns, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86	2MX32 SYNCHRONOUS DRAM, 6ns, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86
包装说明	TSOP2,	TSOP2,	TSOP2,	TSOP2,	TSOP2,	TSOP2,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns
JESD-30 代码	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86
长度	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
内存密度	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	32	32	32	32	32	32
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	86	86	86	86	86	86
字数	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
字数代码	2000000	2000000	2000000	2000000	2000000	2000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	2MX32	2MX32	2MX32	2MX32	2MX32	2MX32
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Objectid	1491416310	1491416364	-	1491416349	1491416331	-
零件包装代码	TSOP2	TSOP2	-	TSOP2	TSOP2	-
针数	86	86	-	86	86	-

MB81F643242B-10LLFN

MB81F643242B-10LLFN概述

MB81F643242B-10LLFN规格参数

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