MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF187/D
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1.0 GHz. The high gain and broadband performance of
these devices make them ideal for large–signal, common source amplifier
applications in 26 volt base station equipment.
•
Guaranteed Performance @ 880 MHz, 26 Volts
Output Power — 85 Watts PEP
Power Gain — 12 dB
Efficiency — 30%
Intermodulation Distortion — –28 dBc
•
100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, 880 MHz, 85 Watts CW
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
1.0 GHz, 85 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
LIFETIME BUY
CASE 465–06, STYLE 1
NI–780
MRF187
CASE 465A–06, STYLE 1
NI–780S
MRF187SR3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (R
GS
= 1 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
≥
25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
T
stg
T
J
Value
65
65
±20
15
250
1.43
–65 to +200
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.70
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF187 MRF187R3 MRF187SR3
1
LAST ORDER 31JUL04
LAST SHIP 31JAN05
RF Power Field Effect Transistors
MRF187
MRF187R3
MRF187SR3
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 50
µAdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 550 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 5 Adc)
V
GS(Q)
V
DS(on)
g
fs
3
—
—
—
0.40
2
5
0.55
—
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
1
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
LIFETIME BUY
DYNAMIC CHARACTERISTICS
Input Capacitance (Includes Internal Input MOScap)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
C
oss
C
rss
—
—
—
295
85
10
—
—
—
pF
pF
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 85 W PEP, I
DQ
= 550 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 85 W PEP, I
DQ
= 550 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 85 W PEP, I
DQ
= 550 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 85 W PEP, I
DQ
= 550 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 85 W PEP, I
DQ
= 550 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 85 W PEP, I
DQ
= 550 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 85 W PEP, I
DQ
= 550 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 85 W PEP, I
DQ
= 550 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 85 W CW, I
DQ
= 550 mA,
f = 880 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
G
ps
12
13
—
dB
η
D
30
33
—
%
IMD
—
–31
–28
dBc
IRL
9
15
—
dB
G
ps
—
13
—
dB
η
D
—
33
—
%
IMD
—
–31
—
dBc
IRL
—
12
—
dB
Ψ
No Degradation In Output Power
Before and After Test
MRF187 MRF187R3 MRF187SR3
2
MOTOROLA RF DEVICE DATA
LAST ORDER 31JUL04
LAST SHIP 31JAN05
V
GG
+
R1
+
C1
C2
R2
R3
B1
B2
+
+
C17
C18
V
DD
+
C16
C19
L1
L2
RF
INPUT
Z7
C8
Z1
C5
C6
C7
C9
Z2
Z3
Z4
Z5
Z6
DUT
C11
Z8
Z9
Z4
Z10
C20
Z11
RF
OUTPUT
C10
C14
C15
LIFETIME BUY
Figure 1. MRF187 Schematic
MOTOROLA RF DEVICE DATA
MRF187 MRF187R3 MRF187SR3
3
LAST ORDER 31JUL04
B1 – B2
C1
C2, C16
C3
C4, C13
C5, C20
C6, C15
C7
C8, C9
C10, C11
C12
C14
C17, C18, C19
Ferrite Bead, Fair Rite, 2743019447
10
µF,
50 V, Electrolytic Capacitor, ECEV1HV100R Panasonic
0.10
µF,
B Case Chip Capacitors, CDR33BX104AKWS, Kemet
20000 pF, B Case Chip Capacitor, 200B203MCA50X, ATC
100 pF, B Case Chip Capacitors, 100B101JCA500X, ATC
47 pF, B Case Chip Capacitors, 100B470JCA500X, ATC
0.8 – 8.0 pF, Variable Capacitors, Johanson Gigatrim
4.7 pF, B Case Chip Capacitor, 100B4R7JCA500X, ATC
10 pF, B Case Chip Capacitors, 100B100JCA500X, ATC
16 pF, B Case Chip Capacitors, 100B160JCA500X, ATC
43 pF, B Case Chip Capacitor, 100B430JCA500X, ATC
7.5 pF, B Case Chip Capacitor, 100B7R5JCA500X, ATC
10
µF,
35 V, Electrolytic Capacitors, SMT, Kemet
L1, L2
R1
R2
R3
Z1, Z11
Z2, Z10
Z3
Z4
Z5
Z6
Z7
Z8
5 Turns, #24 AWG, 0.059″ OD
12
Ω,
1/4 Watt Carbon
4.7 MΩ, 1/4 Watt Carbon
16 kΩ, 1/4 Watt Carbon
0.150″ x 0.220″ Microstrip
0.410″ x 0.220″ Microstrip
0.160″ x 0.630″ Microstrip
0.160″ x 0.630″ Microstrip
0.098″ x 0.630″ Microstrip
0.098″ x 0.630″ Microstrip
0.210″ x 0.220″ Microstrip
0.050″ x 0.220″ Microstrip
LAST SHIP 31JAN05
C3
C4
C12
C13
TYPICAL CHARACTERISTICS
η
D , DRAIN EFFICIENCY (%), Gps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
40
35
30
25
20
15
10
5
0
865
870
IRL
V
DD
= 26 V
I
DQ
= 550 mA, P
out
= 85 WATTS (PEP)
TWO-TONE MEASUREMENT, 100 kHz TONE SPACING
G
ps
IMD
875
880
885
f, FREQUENCY (MHz)
890
η
D
0
-5
-10
-15
-20
-25
-30
-35
-40
895
-10
-20
-30
-40
-50
-60
-70
0.1
3rd Order
7th Order
5th Order
10
1.0
P
out
, OUTPUT POWER (WATTS) PEP
100
LIFETIME BUY
Figure 2. Class AB Broadband Circuit Performance
Figure 3. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP,
η
D , DRAIN EFFICIENCY (%)
160
140
120
G
ps
P
out
16
14
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
12
17
16
15
14
13
12
11
10
0.1
250 mA
1100 mA
900 mA
700 mA
550 mA
400 mA
1300 mA
100
80
60
40
20
0
0
0.5
1.0
η
D
4
2
4.5
5.0
0
5.5
V
DD
= 26 V
f = 880 MHz
TWO-TONE MEASUREMENT,
100 kHz TONE SPACING
1.0
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1.5 2.0 2.5 3.0 3.5 4.0
P
in
, INPUT POWER (WATTS)
Figure 4. Class AB Parameters
versus Input Power
- 10
- 20
- 30
- 40
400 mA
- 50
- 60
0.1
900 mA
1300 mA
550 mA
1.0
10
V
DD
= 26 V
f = 880 MHz
TWO-TONE MEASUREMENT,
100 kHz TONE SPACING
250 mA
Figure 5. Power Gain versus Output Power
1100 mA
700 mA
100
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion
versus Output Power
MRF187 MRF187R3 MRF187SR3
4
MOTOROLA RF DEVICE DATA
LAST ORDER 31JUL04
V
DD
= 26 V
I
DQ
= 550 mA
f = 880 MHz
TWO-TONE MEASUREMENT,
100 kHz TONE SPACING
10
8
6
IMD, INTERMODULATION DISTORTION (dBc)
LAST SHIP 31JAN05
V
DD
= 26 V
I
DQ
= 550 mA
f = 880 MHz
TWO-TONE MEASUREMENT,
100 kHz TONE SPACING
f = 865 MHz
895 MHz
Z
in
Z
o
= 10
Ω
LIFETIME BUY
f = 865 MHz
Z
OL
*
895 MHz
V
CC
= 26 V, I
DQ
= 550 mA, P
out
= 85 W PEP
f
MHz
865
880
895
Z
in
Z
in
Ω
1.04 + j1.51
1.03 + j1.39
1.03 + j1.29
Z
OL
*
Ω
1.13 – j0.091
1.20 – j0.176
1.28 – j0.242
= Complex conjugate of source impedance.
Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
Z
OL
* was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Z
OL
* =
Note:
Figure 7. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF187 MRF187R3 MRF187SR3
5
LAST ORDER 31JUL04
LAST SHIP 31JAN05
stm32/stm8
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