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r
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TSL267
HIGH-SENSITIVITY
IR LIGHT-TO-VOLTAGE CONVERTER
TAOS033E
−
SEPTEMBER 2007
D
Integral Visible Light Cutoff Filter
D
Converts IR Light Intensity to Output
D
D
D
Voltage
Monolithic Silicon IC Containing
Photodiode, Operational Amplifier, and
Feedback Components
High Sensitivity
Single Voltage Supply Operation (2.7 V to
5.5 V)
PACKAGE S
SIDELOOKER
(FRONT VIEW)
PACKAGE SM
SURFACE MOUNT
SIDELOOKER
(FRONT VIEW)
D
Low Noise (200
μVrms
Typ to 1 kHz)
D
Rail-to-Rail Output
D
High Power-Supply Rejection (35 dB at
D
D
1 kHz)
Compact 3-Leaded Plastic Package
RoHS Compliant (−LF Package Only)
Description
The TSL267 is a high-sensitivity low-noise infrared light-to-voltage converter that combines a photodiode and
a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly
proportional to IR light intensity (irradiance) on the photodiode. The TSL267 has a transimpedance gain of
320 MΩ. The device has improved offset voltage stability and low power consumption and is supplied in a 3-lead
visible-light-blocking plastic sidelooker package with an integral lens.
Available Options
DEVICE
TSL267
TSL267
TSL267
T
A
0°C to 70°C
0°C to 70°C
0°C to 70°C
Functional Block Diagram
ch
ni
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Terminal Functions
Te
TERMINAL
NAME
NO.
1
3
2
GND
OUT
V
DD
Ground (substrate). All voltages are referenced to GND.
Output voltage
Supply voltage
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GND
2
V
DD
3
OUT
PACKAGE
−
LEADS
PACKAGE DESIGNATOR
S
S
3-lead Sidelooker
TSL267
3-lead Sidelooker — Lead (Pb) Free
TSL267−LF
3-lead Surface-Mount Sidelooker — Lead (Pb) Free
SM
−
+
Voltage
Output
DESCRIPTION
1
GND
Texas Advanced Optoelectronic Solutions Inc.
1001 Klein Road
S
Suite 300
S
Plano, TX 75074
S
(972) 673-0759
r
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V
DD
3
OUT
ORDERING NUMBER
TSL267SM−LF
Copyright
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2007, TAOS Inc.
TSL267
HIGH-SENSITIVITY
IR LIGHT-TO-VOLTAGE CONVERTER
TAOS033E
−
SEPTEMBER 2007
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Output current, I
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
10 mA
Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s
Operating free-air temperature range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−25°C
to 85°C
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−25°C
to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) . . . . . . . . . . . . . . . . . . . . 260°C
Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Supply voltage, V
DD
Operating free-air temperature, T
A
Electrical Characteristics at V
DD
= 5 V, T
A
= 25
°
C,
λ
p
= 940 nm, R
L
= 10 k
Ω
(unless otherwise noted)
(see Notes 2, 3, and 4)
PARAMETER
V
D
V
OM
V
O
α
VD
N
e
PSRR
I
DD
Dark voltage
TEST CONDITIONS
No Load
MIN
TYP
MAX
UNIT
mV
V
V
E
e
= 0
0
4
15
Maximum output voltage swing
Output voltage
Irradiance responsivity
Temperature coefficient of dark voltage (V
D
)
Power supply rejection ratio
pp y j
Supply current
NOTES: 2.
3.
4.
5.
Te
ch
ni
c
Measured with R
L
= 10 kΩ between output and ground.
Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
The input irradiance is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength
λ
p
= 940 nm.
Irradiance responsivity is characterized over the range V
O
= 0.1 V to 4.5 V. The best-fit straight line of Output Voltage V
O
versus
Irradiance E
e
over this range will typically have a positive extrapolated V
O
value for E
e
= 0.
6. Power supply rejection ratio PSRR is defined as 20 log (ΔV
DD
(f)/ΔV
O
(f)) with V
DD
(f = 0) = 5 V and V
O
(f = 0) = 2 V.
Copyright
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2007, TAOS Inc.
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MIN
MAX
2.7
5.5
V
0
70
V
DD
= 4.5 V,
4.49
4.2
V
DD
= 4.5 V,
R
L
= 10 kΩ
E
e
= 4.4
μW/cm
2
See Note 5
1.2
2
2.8
T
A
= 0°C to 70°C
−15
55
35
μV/°C
dB
dB
0.45
f
ac
= 100 Hz, see Note 6
f
ac
= 1 kHz, see Note 6
E
e
= 4.4
μW/cm
2
1.9
4
mA
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Recommended Operating Conditions
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UNIT
°C
V/(μW/cm
2
)
TSL267
HIGH-SENSITIVITY
IR LIGHT-TO-VOLTAGE CONVERTER
TAOS033E
−
SEPTEMBER 2007
Switching Characteristics at V
DD
= 5 V, T
A
= 25
°
C,
λ
p
= 940 nm, R
L
= 10 kΩ (unless otherwise noted)
PARAMETER
t
r
t
f
t
s
Output pulse rise time, 10% to 90% of final value
Output pulse fall time, 10% to 90% of final value
Output settling time to 1% of final value
Integrated noise voltage
V
n
Output noise voltage, rms
p
g ,
TEST CONDITIONS
See Note 7 and Figure 1
See Note 7 and Figure 1
See Note 7 and Figure 1
f = dc to 1 kHz
f = 10 Hz
f = 100 Hz
f = 1 kHz
NOTE 7: Switching characteristics apply over the range V
O
= 0.1 V to 4.5 V.
E
e
= 0
E
e
= 0
E
e
= 0
E
e
= 0
MIN
TYP
160
150
330
200
6
7
6
MAX
250
250
UNIT
μs
μs
μs
μVrms
μ
/
μV/√Hz
rms
Pulse
Generator
LED
(see Note A)
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PARAMETER MEASUREMENT INFORMATION
V
DD
2
E
e
−
Input
3
+
Output
t
r
TSL267
R
L
90%
90%
1
Output
(see Note B)
10%
10%
TEST CIRCUIT
VOLTAGE WAVEFORM
NOTES: A. The input irradiance is supplied by a pulsed GaAs light-emitting diode with peak wavelength:
λ
p
= 940 nm,
t
r
< 1
μs,
t
f
< 1
μs.
B. The output waveform is monitored on an oscilloscope with the following characteristics: t
r
< 100 ns, Z
i
≥
1 MΩ, C
i
≤
20 pF.
Figure 1. Switching Times
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f
Copyright
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2007, TAOS Inc.
3
TSL267
HIGH-SENSITIVITY
IR LIGHT-TO-VOLTAGE CONVERTER
TAOS033E
−
SEPTEMBER 2007
TYPICAL CHARACTERISTICS
POWER SUPPLY REJECTION RATIO
vs
FREQUENCY
80
Power Supply Rejection Ratio — dB
70
60
50
40
30
20
10
PHOTODIODE SPECTRAL RESPONSIVITY
1.6
1.4
1.2
Relative Responsivity
1.0
0.8
0.6
0.4
0.2
0
700
T
A
= 25°C
Normalized to
940 nm
800
900
1000
λ
−
Wavelength
−
nm
Figure 2
DARK VOLTAGE
vs
FREE-AIR TEMPERATURE
10
9
8
V D
−
Dark Voltage
−
mV
7
6
5
4
3
2
1
0
V
DD
= 5 V
Normalized Response
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1100
0
10
10
2
10
3
10
4
f
−
Frequency
−
Hz
10
5
Figure 3
NORMALIZED RESPONSE
vs
ANGULAR DISPLACEMENT
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
70
0
−90
−70
−50
−30 −10
10
30
50
Angular Displacement
−
5
70
90
Te
0
10
20
30
40
50
60
T
A
−
Free-Air Temperature
−
°C
Figure 4
Figure 5
Copyright
E
2007, TAOS Inc.
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