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TSM10P06

产品描述60V P-Channel MOSFET
文件大小74KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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TSM10P06概述

60V P-Channel MOSFET

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TSM10P06
60V P-Channel MOSFET
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
-60
220 @ V
GS
= -4.5V
-2
R
DSON
(mΩ)
170 @ V
GS
= -10V
I
D
(A)
-5
Features
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
Load Switch
PA Switch
Ordering Information
Part No.
Package
Packing
P-Channel MOSFET
TSM10P06CP ROG
TO-252
2.5Kpcs / 13” Reel
Note:
“G” denote for Halogen Free Product
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
Total Power Dissipation @ T
C
=25C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
Symbol
V
DS
V
GS
I
D
I
DM
I
S
E
AS
I
AS
P
DTOT
T
J
T
J
, T
STG
Limit
-60
±20
-10
-20
-10
5
-10
37
+150
- 55 to +150
Unit
V
V
A
A
A
mJ
A
W
o
o
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
10 sec.
Symbol
JC
JA
Limit
4
70
Unit
o
o
C/W
C/W
1/4
Version: B13

TSM10P06相似产品对比

TSM10P06 TSM10P06CPROG
描述 60V P-Channel MOSFET 60V P-Channel MOSFET

 
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