TSM10P06
60V P-Channel MOSFET
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
-60
220 @ V
GS
= -4.5V
-2
R
DSON
(mΩ)
170 @ V
GS
= -10V
I
D
(A)
-5
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
Package
Packing
P-Channel MOSFET
TSM10P06CP ROG
TO-252
2.5Kpcs / 13” Reel
Note:
“G” denote for Halogen Free Product
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
Total Power Dissipation @ T
C
=25C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
Symbol
V
DS
V
GS
I
D
I
DM
I
S
E
AS
I
AS
P
DTOT
T
J
T
J
, T
STG
Limit
-60
±20
-10
-20
-10
5
-10
37
+150
- 55 to +150
Unit
V
V
A
A
A
mJ
A
W
o
o
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
10 sec.
Symbol
RӨ
JC
RӨ
JA
Limit
4
70
Unit
o
o
C/W
C/W
1/4
Version: B13
TSM10P06
60V P-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Conditions
V
GS
= 0V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= -60V, V
GS
= 0V
V
DS
= -5V, V
GS
= -10V
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -2A
V
DS
= -15V, I
D
= -3.5A
I
S
= -2.5A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Min
-60
-1
--
--
-10
--
--
--
--
Typ
--
--
--
--
--
130
170
6
-1.25
Max
--
--
±100
-1
--
170
220
--
-1.5
Unit
V
V
nA
µA
A
mΩ
S
V
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Q
g
V
DS
= -15V, I
D
= -3.5A,
V
GS
= -10V
Q
gs
Q
gd
C
iss
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
C
oss
C
rss
--
--
--
--
--
--
6
1.7
1.5
540
60
30
--
--
--
--
--
--
pF
nC
t
d(on)
V
DD
= -15V, R
L
= 15Ω,
I
D
= -1A, V
GEN
= -10V,
R
G
= 6Ω
t
r
t
d(off)
--
--
--
--
7
9
19
4
--
--
--
--
nS
Turn-Off Fall Time
t
f
Notes 1:
Pulse test: PW
≤
300µS, duty cycle
≤
2%
Notes 2:
L=0.1mH,
Notes 3:
For DESIGN AID ONLY, not subject to production testing.
Notes 4:
Switching time is essentially independent of operating temperature.
2/4
Version: B13
TSM10P06
60V P-Channel MOSFET
TO-252 Mechanical Drawing
DIM
A
B
C
D
E
F
G
G1
H
H1
J
K
L
M
TO-252 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.30 BSC
0.090 BSC
0.402
0.425
10.20
10.80
0.209
0.224
5.30
5.70
0.248
0.264
6.30
6.70
0.083
0.098
2.10
2.50
0.000
0.008
0.00
0.20
0.189
0.205
4.80
5.20
0.016
0.031
0.40
0.80
0.016
0.024
0.40
0.60
0.014
0.026
0.35
0.65
0.132
0.144
3.35
3.65
0.020
0.043
0.50
1.10
0.035
0.059
0.90
1.50
0.051
0.067
1.30
1.70
3/4
Version: B13
TSM10P06
60V P-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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4/4
Version: B13