DRAM Module, 256KX8, 200ns, NMOS, 3.100 X 0.450 INCH, SIMM-30
| 参数名称 | 属性值 |
| 厂商名称 | Rochester Electronics |
| 包装说明 | SIMM, |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | PAGE |
| 最长访问时间 | 200 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 代码 | R-XSMA-T30 |
| JESD-609代码 | e0 |
| 内存密度 | 2097152 bit |
| 内存集成电路类型 | DRAM MODULE |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 30 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 256KX8 |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | SIMM |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | NMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |

| TM4256GV8-20L | TM4256FL8-12L | TM4256FL8-10L | TM4256GV8-15L | TM4256GU8-12L | TM4256GU8-20L | TM4256GV8-12L | TM4256FL8-20L | TM4256GP8-12L | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | DRAM Module, 256KX8, 200ns, NMOS, 3.100 X 0.450 INCH, SIMM-30 | DRAM Module, 256KX8, 120ns, NMOS, SIMM-30 | DRAM Module, 256KX8, 100ns, NMOS, SIMM-30 | DRAM Module, 256KX8, 150ns, NMOS, 3.100 X 0.450 INCH, SIMM-30 | DRAM Module, 256KX8, 120ns, NMOS, SIMM-30 | DRAM Module, 256KX8, 200ns, NMOS, 3.500 X 0.650 INCH, SIMM-30 | DRAM Module, 256KX8, 120ns, NMOS, 3.100 X 0.450 INCH, SIMM-30 | DRAM Module, 256KX8, 200ns, NMOS, 3 X 0.650 INCH, SIMM-30 | DRAM Module, 256KX8, 120ns, NMOS, 3.500 X 0.450 INCH, SIMM-30 |
| 包装说明 | SIMM, | SIMM, | SIMM, | SIMM, | SIMM, | SIMM, | SIMM, | SIMM, | SIMM, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE |
| 最长访问时间 | 200 ns | 120 ns | 100 ns | 150 ns | 120 ns | 200 ns | 120 ns | 200 ns | 120 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 代码 | R-XSMA-T30 | R-XSMA-T30 | R-XSMA-T30 | R-XSMA-T30 | R-XSMA-N30 | R-XSMA-N30 | R-XSMA-T30 | R-XSMA-T30 | R-XSMA-N30 |
| 内存密度 | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit |
| 内存集成电路类型 | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装代码 | SIMM | SIMM | SIMM | SIMM | SIMM | SIMM | SIMM | SIMM | SIMM |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | NO LEAD |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 厂商名称 | Rochester Electronics | Rochester Electronics | - | - | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics |
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