TM4256GU8-12L概述

DRAM Module, 256KX8, 120ns, NMOS, SIMM-30

TM4256GU8-12L规格参数

参数名称	属性值
厂商名称	Rochester Electronics
包装说明	SIMM,
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	PAGE
最长访问时间	120 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码	R-XSMA-N30
内存密度	2097152 bit
内存集成电路类型	DRAM MODULE
内存宽度	8
功能数量	1
端口数量	1
端子数量	30
字数	262144 words
字数代码	256000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	256KX8
封装主体材料	UNSPECIFIED
封装代码	SIMM
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	NMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子位置	SINGLE

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TM4256GU8-12L相似产品对比

	TM4256GU8-12L	TM4256FL8-12L	TM4256FL8-10L	TM4256GV8-15L	TM4256GU8-20L	TM4256GV8-20L	TM4256GV8-12L	TM4256FL8-20L	TM4256GP8-12L
描述	DRAM Module, 256KX8, 120ns, NMOS, SIMM-30	DRAM Module, 256KX8, 120ns, NMOS, SIMM-30	DRAM Module, 256KX8, 100ns, NMOS, SIMM-30	DRAM Module, 256KX8, 150ns, NMOS, 3.100 X 0.450 INCH, SIMM-30	DRAM Module, 256KX8, 200ns, NMOS, 3.500 X 0.650 INCH, SIMM-30	DRAM Module, 256KX8, 200ns, NMOS, 3.100 X 0.450 INCH, SIMM-30	DRAM Module, 256KX8, 120ns, NMOS, 3.100 X 0.450 INCH, SIMM-30	DRAM Module, 256KX8, 200ns, NMOS, 3 X 0.650 INCH, SIMM-30	DRAM Module, 256KX8, 120ns, NMOS, 3.500 X 0.450 INCH, SIMM-30
包装说明	SIMM,	SIMM,	SIMM,	SIMM,	SIMM,	SIMM,	SIMM,	SIMM,	SIMM,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	PAGE	PAGE	PAGE	PAGE	PAGE	PAGE	PAGE	PAGE	PAGE
最长访问时间	120 ns	120 ns	100 ns	150 ns	200 ns	200 ns	120 ns	200 ns	120 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码	R-XSMA-N30	R-XSMA-T30	R-XSMA-T30	R-XSMA-T30	R-XSMA-N30	R-XSMA-T30	R-XSMA-T30	R-XSMA-T30	R-XSMA-N30
内存密度	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit
内存集成电路类型	DRAM MODULE	DRAM MODULE	DRAM MODULE	DRAM MODULE	DRAM MODULE	DRAM MODULE	DRAM MODULE	DRAM MODULE	DRAM MODULE
内存宽度	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1
端子数量	30	30	30	30	30	30	30	30	30
字数	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
字数代码	256000	256000	256000	256000	256000	256000	256000	256000	256000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO
技术	NMOS	NMOS	NMOS	NMOS	NMOS	NMOS	NMOS	NMOS	NMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
厂商名称	Rochester Electronics	Rochester Electronics	-	-	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics

TM4256GU8-12L

TM4256GU8-12L概述

TM4256GU8-12L规格参数

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TM4256GU8-12L相似产品对比

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