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MBR2545CTD0G

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 45V V(RRM), Silicon, TO-220AB,
产品类别分立半导体    二极管   
文件大小227KB,共3页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
下载文档 详细参数 全文预览

MBR2545CTD0G概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 45V V(RRM), Silicon, TO-220AB,

MBR2545CTD0G规格参数

参数名称属性值
厂商名称Taiwan Semiconductor
包装说明R-PSFM-T3
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.82 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流200 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流12.5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压45 V
最大反向电流200 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

MBR2545CTD0G文档预览

CREAT BY ART
MBR2535CT - MBR25150CT
25.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: JEDEC TO-220AB molded plastic
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.90 grams
Ordering Information(example)
Part No.
MBR2535CT
Package
Packing
Packing
code
D0
Green Compound
Packing code
D0G
TO-220AB 50 / TUBE
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR
Symbol 2535
CT
V
RRM
35
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
1.0
-
V
F
-
0.82
0.73
I
R
dV/dt
Cj
R
θJC
T
J
T
STG
600
1.0
- 65 to + 150
- 65 to + 175
0.2
15
0.75
0.65
-
-
0.2
10
10,000
460
O
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=12.5A, T
A
=25℃
IF=12.5A, T
A
=125℃
IF=25A, T
A
=25℃
IF=25A, T
A
=125℃
Maximum Instantaneous Reverse Current @ T
A
=25
at Rated DC Blocking Voltage Per Leg
@ T
A
=125
Voltage Rate of Change (Rated V
R
)
Typical Junction Capacitance
Maximum Thermal Resistance Per Leg
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle
MBR
2545
CT
45
31
45
MBR
2550
CT
50
35
50
MBR
2560
CT
60
42
60
25
25
200
MBR
2590
CT
90
63
90
MBR MBR
25100 25150
CT
CT
100
150
70
100
105
150
Units
V
V
V
A
A
A
24
35
0.5
0.85
0.75
0.92
0.88
0.1
7.5
0.95
0.92
1.02
0.98
0.1
5
A
V
mA
mA
V/us
pF
C/W
O
O
C
C
Version:H12
RATINGS AND CHARACTERISTIC CURVES (MBR2535CT THRU MBR25150CT)
FIG.1- FORWARD CURRENT DERATING CURVE
30
AVERAGE FORWARD CURRENT (A)
25
20
15
10
5
0
0
50
100
150
CASE TEMPERATURE (
o
C)
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
PEAK FORWARD SURGE CURRENT (A)
250
225
200
175
150
125
100
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3mS Single Half Sine Wave
JEDEC Method
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
FIG. 3- TYPICAL INSTATANEOUS FORWARD
CHARACTERISTICS PER LEG
100
100
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
INSTANTANEOUS FORWARD CURRENT (A)
10
INSTANTANEOUS REVERSE CURRENT (mA)
10
TA=125℃
1
TA=125℃
1
TA=25℃
Pulse Width=300us
1% Duty Cycle
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
MBR2590CT-MBR25150CT
0.1
TA=25℃
0.1
0.01
MBR2535CT-MBR2545CT
MBR2550CT-MBR25150CT
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG
1
1.1 1.2
10000
JUNCTION CAPACITANCE (pF)
A
MBR2535CT-MBR2545CT
MBR2550CT-MBR25150CT
TA=25℃
f=1.0MHz
Vsig=50mVp-p
100
1000
TRANSIENT THERMAL
IMPEDANCE (℃/W)
10
1
100
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
10
100
T-PULSE DURATION(sec)
Version:H12
Ordering information
Part No.
MBR25xxCT
Package
TO-220AB
TO-220AB
BULK Packing
50 / TUBE
50 / TUBE
Packing
code
C0
D0
Green Compound
Packing code
C0G
D0G
Note: "xx" is Device Code from "35" thru "150".
Dimensions
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
Unit(mm)
Min
-
2.62
2.80
0.68
3.54
14.60
13.19
2.41
4.42
1.14
5.84
2.20
0.35
Max
10.50
3.44
4.20
0.94
4.00
16.00
14.79
2.67
4.76
1.40
6.86
2.80
0.64
Unit(inch)
Min
-
0.103
0.110
0.027
0.139
0.575
0.519
0.095
0.174
0.045
0.230
0.087
0.014
Max
0.413
0.135
0.165
0.037
0.157
0.630
0.582
0.105
0.187
0.055
0.270
0.110
0.025
Marking Diagram
P/N
G
YWW
= Specific Device Code
= Green Compound
= Date Code
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