TSOP322..SJ1F
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP322..SJ1F - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP322..SJ1F is the
standard IR remote control receiver series for 3 V
supply voltage, supporting all major transmission
codes.
1
2
3
18300
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
e3
• Improved shielding against electrical
field disturbance
• TTL and CMOS compatibility
• Output active low
• Supply voltage: 2.7 V to 5.5 V
• Improved immunity against ambient light
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Enhanced suppression of disturbance by special
filtering
Mechanical Data
Pinning:
1 = OUT, 2 = V
S
, 3 = GND
Parts Table
Part
TSOP32230SJ1F
TSOP32233SJ1F
TSOP32236SJ1F
TSOP32237SJ1F
TSOP32238SJ1F
TSOP32240SJ1F
TSOP32256SJ1F
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Block Diagram
Application Circuit
17170
16835
2
30 kΩ
Input
AG
C
Band
Pass
Demo-
dulator
V
S
Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
R
1
= 100
Ω
V
S
OUT
GND
V
O
C
1
=
4.7 µF
+
V
S
1
OUT
3
PIN
Control Circuit
GND
µC
GND
R
1
and C
1
recommended to suppress power supply
disturbances. The output
voltage
should not
be
hold continuously at a
voltage below V
O
= 2.0
V
by
the external circuit.
Document Number 81402
Rev. 1.0, 19-Sep-06
www.vishay.com
1
TSOP322..SJ1F
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
≤
85 °C)
t
≤
10 s, 1 mm from case
(Pin 2)
(Pin 2)
(Pin 1)
(Pin 1)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
- 0.3 to + 6.0
3
- 0.3 to
(V
S
+ 0.3)
10
100
- 25 to + 85
- 25 to + 85
30
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 2)
Supply Voltage
Transmission Distance
E
v
= 0, test signal see fig. 1,
IR diode TSAL6200,
I
F
= 250 mA
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
V
S
= 3 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
V
S
= 3 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
V
S
= 5 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
V
S
= 5 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
Angle of half transmission
distance
E
v
= 0
E
v
= 40 klx, sunlight
Test condition
Symbol
I
SD
I
SH
V
S
d
2.7
35
Min
0.7
Typ.
1.2
1.3
5.5
Max
1.5
Unit
mA
mA
V
m
Output Voltage Low (Pin 1)
Minimum Irradiance
(30 - 40 kHz)
V
OSL
E
e min
0.2
250
0.4
mV
mW/m
2
Minimum Irradiance (56 kHz)
E
e min
0.3
0.5
mW/m
2
Minimum Irradiance
(30 - 40 kHz)
E
e min
0.35
0.5
mW/m
2
Minimum Irradiance (56 kHz)
E
e min
0.45
0.6
mW/m
2
Maximum Irradiance
Directivity
E
e max
ϕ
1/2
30
± 45
W/m
2
deg
www.vishay.com
2
Document Number 81402
Rev. 1.0, 19-Sep-06
TSOP322..SJ1F
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, T = 10 ms)
E
e
1.0
T
on
,T
off
- Output Pulse
Width
(ms)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
= 950 nm,
optical test signal, fig. 3
Toff
Ton
t
t
pi
*
* t
pi
V
O
V
OH
V
OL
t
d1 )
T
10/fo is recommended for optimal function
16110
Output Signal
1)
2)
7/f
0
<
t
d
<
15/f
0
t
pi
- 5/f
0
<
t
po
<
t
pi
+ 6/f
0
t
po2 )
t
16909
10.0 100.0 1000.0 10000.0
E
e
- Irradiance (mW/m²)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
1.0
0.9
Output Pulse
E
e min
/E
e
- Rel. Responsivity
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.7
16925
t
po
- Output Pulse
Width
(ms)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
= 950 nm,
optical test signal, fig. 1
Input Burst Duration
f = f
0
± 5 %
f (3 dB) = f
0
/10
0.9
1.1
f/f
0
- Relative Frequency
1.3
16908
10.0 100.0 1000.0 10000.0
E
e
- Irradiance (mW/m²)
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
E
e
Optical Test Signal
4.0
E
e min
- Threshold Irradiance (mW/m
2
)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient, = 950 nm
Correlation
with
ambient light sources:
10
W/m
2
1.4 klx (Std.illum.A, T= 2855 K)
10
W/m
2
8.2
klx (Daylight, T = 5900 K)
600 µs
T = 60 ms
Output Signal,
(see fig. 4)
600 µs
t
94
8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
100.00
E - Ambient DC Irradiance (W/m
2
)
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 81402
Rev. 1.0, 19-Sep-06
www.vishay.com
3
TSOP322..SJ1F
Vishay Semiconductors
E
e min
- Threshold Irradiance (mW/m²)
2.0
E
e min
- Threshold Irradiance (mW/m²)
0.6
0.5
0.4
0.3
0.2
0.1
Sensitivity in dark ambient
1.5
f = f
o
f = 10 kHz
1.0
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
V
sRMS
- AC
Voltage
on DC Supply
Voltage
(mV)
16912
0.0
- 30 - 15 0
15 30 45 60 75
16918
T
amb
- Ambient Temperature (°C)
90
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
E
e min
- Threshold Irradiance (mW/m²)
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E - Field Strength of Disturbance (kV/m)
S (
λ
)
rel
- Relative Spectral Sensitivity
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
750
850
950
1050
1150
94
8147
18998
λ
-
Wavelength
(nm)
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0.8
0.7
Max. Envelope Duty Cycle
0.6
0°
10°
20°
30°
40°
0.5
0.4
0.3
0.2
0.1
0.0
0
f = 38 kHz, E
e
= 2 mW/m
2
0.7
1.0
0.9
0.8
50°
60°
70°
80°
20
40
60
80
100 120
Burst Length (number of cycles/burst)
0.6
96 12223p2
16913
0.4 0.2
0
0.2
0.4 0.6
d
rel
- Relative Transmission Distance
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Directivity
www.vishay.com
4
Document Number 81402
Rev. 1.0, 19-Sep-06
TSOP322..SJ1F
Vishay Semiconductors
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 14 or Figure 15).
1.0
0.9
E
e min
- Sensitivity (mW/m
2
)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
S
- Supply
Voltage
(V)
0.1
17185
Figure 13. Sensitivity vs. Supply Voltage
IR Signal
IR Signal from fluorescent
lamp
with
low modulation
Suitable Data Format
The circuit of the TSOP322..SJ1F is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and
70 cycles a gap time of at least 14 cycles is neces-
sary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP322..SJ1F it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP322..SJ1F are:
• DC light (e.g. from tungsten bulb or sunlight)
16920
0
5
10
Time (ms)
15
20
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp
with
high modulation
IR Signal
0
16921
10
10
Time (ms)
15
20
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
Document Number 81402
Rev. 1.0, 19-Sep-06
www.vishay.com
5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
