Amplifier, High Power X-Band, 6W
7.5-10.5 GHz
Features
♦
♦
♦
♦
GaAs MSAG
®
Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
MAAPGM0024-DIE
903243 —
Preliminary Information
6 Watt Saturated Output Power Level
Variable Drain Voltage (6-10V) Operation
Description
The MAAPGM0024-Die is a 3-stage power amplifier with on-chip bias networks.
This product is fully matched to 50 ohms on both the input and output. It can be
used as a power amplifier stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG
®
) Process, each device is 100%
RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG process features robust silicon-like manufacturing proc-
esses, planar processing of ion implanted transistors, multiple implant capabil-
ity enabling power, low-noise, switch and digital FETs on a single chip, and
polyimide scratch protection for ease of use with automated manufacturing
processes. The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when employed in her-
metic packaging.
Primary Applications
♦
Point-to-Point Radio (7.8-8.5 GHz)
♦
Military
♦
Weather Radar
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50Ω, V
DD
= 8V, V
GG
= -2V, P
in
= 20 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Gate Supply Current
Drain Supply Current
Output Third Order Intercept
3
rd
Order Intermodulation Distortion
Single Carrier Level = 20 dBm
5
th
Order Intermodulation Distortion
Single Carrier Level = 20 dBm
Noise Figure
2
nd
Harmonic
3
rd
Harmonic
1.
2.
Symbol
f
P
OUT
PAE
P1dB
G
VSWR
VSWR
I
GG
I
DD
OTOI
IM3
IM5
NF
2f
3f
<5
< 2.5
mA
A
dBm
dBm
dBm
dB
dBc
dBc
Typical
7.5-10.5
38
37
37
26
2.5 :1
Units
GHz
dBm
%
dBm
dB
1. T
B
= MMIC Base Temperature
Adjust V
GG
between –2.4 and –1.5V to achieve I
DQ
indicated.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, High Power X-Band, 6W
Maximum Operating Conditions
3
7.5-10.5 GHz
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF, 40% Idss)
Quiescent DC Power Dissipation (No RF)
Junction Temperature
Storage Temperature
Die Attach Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
903243 —
Absolute Maximum
Preliminary Information
Units
25.0
+12.0
-2.0
1.9
16
180
-55 to +150
310
dBm
V
V
A
W
°C
°C
°C
MAAPGM0024-DIE
3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Supply Voltage
Gate Supply Voltage
Input Power
Junction Temperature
Thermal Resistance
MMIC Base Temperature
Symbol
V
DD
V
GG
P
IN
T
J
Θ
JC
T
B
5.1
Note 2
Min
4.0
-2.4
Typ
8.0
-2.0
Max
10.0
-1.6
23.0
150
Unit
V
V
dBm
°C
°C/W
°C
4. Maximum MMIC Base Temperature = 150°C —
Θ
JC
* V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8 V.
3. Adjust
V
GG
to set I
DQ
.
4. Set RF input.
5.
Power down sequence in reverse. Turn V
GG
off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, High Power X-Band, 6W
7.5-10.5 GHz
45
40
35
30
25
20
15
10
5
0
7
8
9
Frequency (GHz)
10
50
MAAPGM0024-DIE
POUT
903243 —
PAE
Preliminary Information
11
12
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
DD
= 8V, P
in
= 20 dBm.
50
45
40
35
30
25
20
15
10
5
0
6.0
6.5
7.0
7.5
8.0
Drain Voltage (Volts)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at f
o
= 9 GHz.
8.5
9.0
POUT
PAE
9.5
10.0
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, High Power X-Band, 6W
50
7.5-10.5 GHz
45
40
35
30
25
20
15
10
5
0
7
8
9
10
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
VDD = 6
VDD = 8
MAAPGM0024-DIE
903243 —
Preliminary Information
11
12
30
GAIN
VSWR
25
6
5
20
4
15
3
10
2
5
7
8
9
10
Frequency (GHz)
Figure 4. Small Signal Gain and VSWR vs. Frequency at V
DD
= 8V.
11
12
1
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, High Power X-Band, 6W
Mechanical Information
7.5-10.5 GHz
0.158mm.
0.608mm.
MAAPGM0024-DIE
(
198 x 174 x 3 mils)
4.006mm.
5.008mm.
5.008mm.
Chip Size: 5.008 x 4.404 x 0.075 mm
903243 —
Preliminary Information
4.404mm.
4.191mm.
V
GG
V
D1, 2
V
D3
4.191mm.
2.202mm.
2.202mm.
OUT
IN
0.214mm.
0
0
V
GG
V
D1, 2
V
D3
0.213mm.
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
Size (μm)
100 x 200
200 x 150
150 x 150
Size (mils)
4x8
8x6
6x6
0.608mm.
4.006mm.
4.856mm.
1.509mm.
Figure 5. Die Layout
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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