Cache SRAM, 8KX18, BICMOS, PQCC52, PLASTIC, LCC-52
| 参数名称 | 属性值 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | LCC |
| 包装说明 | QCCJ, |
| 针数 | 52 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| JESD-30 代码 | S-PQCC-J52 |
| JESD-609代码 | e0 |
| 长度 | 19.1262 mm |
| 内存密度 | 147456 bit |
| 内存集成电路类型 | CACHE SRAM |
| 内存宽度 | 18 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 52 |
| 字数 | 8192 words |
| 字数代码 | 8000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 8KX18 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | QCCJ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 4.57 mm |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | BICMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 宽度 | 19.1262 mm |
| IDT71B222S25JB | 33522B | IDT71B222S18J | IDT71B222S30J8 | IDT71B222S25J | IDT71B222S30JB8 | IDT71B222S30J | IDT71B222S30JB | IDT71B222S25J8 | IDT71B222S25JB8 | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | Cache SRAM, 8KX18, BICMOS, PQCC52, PLASTIC, LCC-52 | Waveform Generators | Cache SRAM, 8KX18, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 8KX18, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 8KX18, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 8KX18, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 8KX18, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 8KX18, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 8KX18, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 8KX18, BICMOS, PQCC52, PLASTIC, LCC-52 |
| 厂商名称 | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 零件包装代码 | LCC | - | LCC | LCC | LCC | LCC | LCC | LCC | LCC | LCC |
| 包装说明 | QCCJ, | - | QCCJ, | QCCJ, | QCCJ, | QCCJ, | QCCJ, | QCCJ, | QCCJ, | QCCJ, |
| 针数 | 52 | - | 52 | 52 | 52 | 52 | 52 | 52 | 52 | 52 |
| Reach Compliance Code | unknown | - | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | 3A001.A.2.C | - | EAR99 | EAR99 | EAR99 | 3A001.A.2.C | EAR99 | 3A001.A.2.C | EAR99 | 3A001.A.2.C |
| JESD-30 代码 | S-PQCC-J52 | - | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 |
| JESD-609代码 | e0 | - | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 19.1262 mm | - | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm |
| 内存密度 | 147456 bit | - | 147456 bit | 147456 bit | 147456 bit | 147456 bit | 147456 bit | 147456 bit | 147456 bit | 147456 bit |
| 内存集成电路类型 | CACHE SRAM | - | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
| 内存宽度 | 18 | - | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
| 功能数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 52 | - | 52 | 52 | 52 | 52 | 52 | 52 | 52 | 52 |
| 字数 | 8192 words | - | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
| 字数代码 | 8000 | - | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
| 工作模式 | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 125 °C | - | 70 °C | 70 °C | 70 °C | 125 °C | 70 °C | 125 °C | 70 °C | 125 °C |
| 组织 | 8KX18 | - | 8KX18 | 8KX18 | 8KX18 | 8KX18 | 8KX18 | 8KX18 | 8KX18 | 8KX18 |
| 输出特性 | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | - | YES | YES | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | QCCJ | - | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ |
| 封装形状 | SQUARE | - | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | CHIP CARRIER | - | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 并行/串行 | PARALLEL | - | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 4.57 mm | - | 4.57 mm | 4.57 mm | 4.57 mm | 4.57 mm | 4.57 mm | 4.57 mm | 4.57 mm | 4.57 mm |
| 标称供电电压 (Vsup) | 5 V | - | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | - | YES | YES | YES | YES | YES | YES | YES | YES |
| 技术 | BICMOS | - | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS |
| 温度等级 | MILITARY | - | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL | MILITARY |
| 端子面层 | TIN LEAD | - | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | J BEND | - | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND |
| 端子节距 | 1.27 mm | - | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | QUAD | - | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
| 宽度 | 19.1262 mm | - | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm |
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