HIH25N120TN
Dec 2013
V
CES
= 1200 V
HIH25N120TN
1200V NPT Trench IGBT
FEATURES
1200V NPT Trench Technology
High Speed Switching
Low Conduction Loss
Positive Temperature Coefficient
Easy Parallel Operation
I
C
= 25 A
V
CE(sat) typ
= 1.9 V
TO-3P
G
C
E
Absolute Maximum Ratings
Symbol
V
CES
I
C
I
CM
I
F
I
FM
V
GES
P
D
T
J
T
STG
T
L
Collector Current
Collector Current
Collector Current
Parameter
Collector-Emitter Voltage
– Continuous (T
C
= 25
– Continuous (T
C
= 100
– Pulsed
)
)
)
)
Value
1200
50
25
75
50
25
75
20
– Continuous (T
C
= 25
– Continuous (T
C
= 100
)
)
312
125
-55 to +150
-55 to +150
300
Units
V
A
A
A
A
A
A
V
W
(Note 1)
Diode Forward Current – Continuous (T
C
= 25
Diode Forward Current – Continuous (T
C
= 100
Diode Current
Gate-Emitter Voltage
Power Dissipation
Power Dissipation
– Pulsed
(Note 1)
Operating Temperature Range
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Notes.
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Symbol
R
R
R
JC
(IGBT)
JC
(Diode)
JA
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
--
Max.
0.4
2.1
40
Units
/W
HIH25N120TN
Package Marking and Odering Information
Device Marking
HIH25N120TN
HIH25N120TN
Week Marking
YWWX
YWWXg
Package
TO-3P
TO-3P
Packing
Tube
Tube
Quantity
30
30
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics of the IGBT
T
C
=25
Symbol
Parameter
C unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GE(th)
V
CE(sat)
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE
= V
GE
, I
C
= 25 mA
V
GE
= 15 V,
I
C
= 25 A
T
C
= 25
T
C
= 125
3.0
--
--
5.0
1.9
2.2
7.0
2.5
--
V
V
Off Characteristics
BV
CES
I
CES
I
GES
Collector-Emitter Breakdown
Voltage
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current
V
GE
= 0 V, I
C
= 1 mA
V
CE
= 1200 V, V
GE
= 0 V
V
GE
=
20 V, V
CE
= 0 V
1200
--
--
--
--
--
--
1
250
V
mA
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30 V, V
GE
= 0 V,
f = 1.0 MHz
--
--
--
4000
105
72
--
--
--
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 600V, I
C
= 25 A,
V
GE
= 15 V
V
CC
= 600 V, I
C
= 25 A,
R
G
= 10
GE
= 15V
Inductive load, T
C
= 125
V
CC
= 600 V, I
C
= 25 A,
R
G
= 10
GE
= 15V
Inductive load, T
C
= 25
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
57
65
240
86
4.15
0.87
5.02
41
57
265
168
4.46
1.74
6.2
230
25
70
--
--
--
160
6.22
1.31
7.53
--
--
--
--
6.69
2.61
9.3
350
40
100
mJ
mJ
mJ
nC
nC
nC
mJ
mJ
mJ
HIH25N120TN
Electrical Characteristics of the Diode
V
FM
t
rr
I
rr
Q
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
I
F
= 25 A,
di/dt = 200 A/
I
F
= 25 A
T
C
= 25
T
C
= 125
T
C
= 25
T
C
= 125
T
C
= 25
T
C
= 125
T
C
= 25
T
C
= 125
--
--
--
--
--
--
--
--
2.0
2.18
300
360
27
31
4000
5580
2.5
--
480
--
41
--
--
--
V
ns
A
nC
HIH25N120TN
IGBT Characteristics
HIH25N120TN
IGBT Characteristics
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