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IRHF57130PBF: 产品描述Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN; 产品类别分立半导体晶体管; 文件大小180KB，共8页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/; 标准

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IRHF57130PBF概述

Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

IRHF57130PBF规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Infineon(英飞凌)
包装说明	HERMETIC SEALED, MODIFIED TO-39, 3 PIN
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	AVALANCHE RATED
雪崩能效等级（Eas）	173 mJ
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (ID)	11.7 A
最大漏源导通电阻	0.08 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-205AF
JESD-30 代码	O-MBCY-W3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
封装主体材料	METAL
封装形状	ROUND
封装形式	CYLINDRICAL
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	47 A
认证状态	Not Qualified
表面贴装	NO
端子形式	WIRE
端子位置	BOTTOM
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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PD-93789F

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

Product Summary

Part Number

IRHF57130

IRHF53130

IRHF54130

IRHF58130

Radiation Level

100K Rads (Si)

300K Rads (Si)

500K Rads (Si)

1000K Rads (Si)

DS(on)

0.08Ω

0.10Ω

11.7A

QPL Part Number

JANSR2N7493T2

JANSF2N7493T2

JANSG2N7493T2

IRHF57130

JANSR2N7493T2

100V, N-CHANNEL

REF: MIL-PRF-19500/701

TECHNOLOGY

11.7A JANSH2N7493T2

TO-39

International Rectifier’s R5

technology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm

)). The combination

of low R

DS(on)

and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Identical Pre- & Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25°C

ID @ VGS = 12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

11.7

7.4

0.2

±20

173

11.7

2.5

4.9

-55 to 150

Pre-Irradiation

Units

W/°C

V/ns

300 (0.063 in./1.6mm from case for 10s)

0.98 (Typical)

www.irf.com

10/27/11

IRHF57130PBF相似产品对比

	IRHF57130PBF	IRHF53130	IRHF58130	IRHF54130PBF	IRHF57130	IRHF54130
描述	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
是否Rohs认证	符合	不符合	不符合	符合	不符合	不符合
包装说明	HERMETIC SEALED, MODIFIED TO-39, 3 PIN	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	HERMETIC SEALED, MODIFIED TO-39, 3 PIN	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant	compliant	compliant	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
雪崩能效等级（Eas）	173 mJ	173 mJ	173 mJ	173 mJ	173 mJ	173 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	100 V	100 V	100 V
最大漏极电流 (ID)	11.7 A	11.7 A	11.7 A	11.7 A	11.7 A	11.7 A
最大漏源导通电阻	0.08 Ω	0.08 Ω	0.08 Ω	0.08 Ω	0.08 Ω	0.08 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-205AF	TO-205AF	TO-205AF	TO-205AF	TO-205AF	TO-205AF
JESD-30 代码	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	METAL	METAL	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
峰值回流温度（摄氏度）	260	NOT SPECIFIED	NOT SPECIFIED	260	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	47 A	47 A	47 A	47 A	47 A	47 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	40	NOT SPECIFIED	NOT SPECIFIED	40	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Infineon(英飞凌)	-	-	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
最大漏极电流 (Abs) (ID)	-	11.7 A	11.7 A	-	11.7 A	11.7 A
JESD-609代码	-	e0	e0	-	e0	e0
最高工作温度	-	150 °C	150 °C	-	150 °C	150 °C
最大功率耗散 (Abs)	-	25 W	25 W	-	25 W	25 W
端子面层	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

IRHF57130PBF

IRHF57130PBF概述

IRHF57130PBF规格参数

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IRHF57130PBF相似产品对比

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