IRG7PH37K10DPbF
IRG7PH37K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 1200V
I
C
= 25A, T
C
=100°C
t
SC
10µs,
T
J(max)
= 150°C
V
CE(ON)
typ. = 1.9V
@ I
C
= 15A
G
E
C
G
G
n-channel
Applications
• Industrial Motor Drive
• UPS
G
Gate
C
G
IRG7PH37K10DPbF
TO‐247AC
C
Collector
E
C
E
G
IRG7PH37K10D‐EPbF
TO‐247AD
E
Emitter
Features
Low V
CE(ON)
and Switching Losses
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C
Positive V
CE (ON)
Temperature Coefficient
Base part number
IRG7PH37K10DPBF
IRG7PH37K10D-EPBF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
=20V
Clamped Inductive Load Current, V
GE
=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Package Type
TO-247AC
TO-247AD
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG7PH37K10DPBF
IRG7PH37K10D-EPBF
Max.
1200
45
25
60
60
18
10
±30
216
86
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.6
1.7
–––
–––
Units
°C/W
1
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November 4, 2013
IRG7PH37K10DPbF/IRG7PH37K10D-EPbF
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Min.
1200
—
Typ.
—
0.93
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 250µA
V/°C V
GE
= 0V, I
C
= 2mA (25°C-150°C)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)CES
/T
J
V
CE(on)
—
1.9
—
2.4
Gate Threshold Voltage
5.0
—
V
GE(th)
Threshold Voltage Temperature Coeff.
—
-15
V
GE(th)
/T
J
gfe
Forward Transconductance
—
11
—
1.0
I
CES
Collector-to-Emitter Leakage Current
—
700
Gate-to-Emitter Leakage Current
—
—
I
GES
—
2.5
Diode Forward Voltage Drop
V
F
—
2.4
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
.
2.4
V
I
C
= 15A, V
GE
= 15V, T
J
= 25°C
—
I
C
= 15A, V
GE
= 15V, T
J
= 150°C
7.5
V
V
CE
= V
GE
, I
C
= 720µA
—
mV/°C V
CE
= V
GE
, I
C
= 720µA (25°C-150°C)
—
S
V
CE
= 50V, I
C
= 15A, PW = 20µs
30
µA V
GE
= 0V, V
CE
= 1200V
—
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
±100
nA V
GE
= ±30V
3.0
V
I
F
= 6.0A
—
I
F
= 6.0A, T
J
= 150°C
Max Units
Conditions
135
I
C
= 15A
30
nC V
GE
= 15V
V
CC
= 600V
60
1.9
0.8
mJ
I
C
= 15A, V
CC
= 600V, V
GE
=15V
2.7
R
G
= 10, T
J
= 25°C
65
Energy losses include tail & diode
45
ns reverse recovery
270
100
—
—
—
—
—
—
—
—
—
—
mJ
I
C
= 15A, V
CC
= 600V, V
GE
=15V
R
G
= 10, T
J
= 150°C
Energy losses include tail & diode
reverse recovery
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
90
20
40
1.0
0.6
1.6
50
30
240
80
1.4
1.1
2.5
35
30
260
270
2000
90
45
ns
FULL SQUARE
10
—
—
—
—
250
120
15
—
—
—
—
V
GE
= 0V
pF V
CC
= 30V
f = 1.0Mhz
T
J
= 150°C, I
C
= 60A
V
CC
= 960V, Vp
≤
1200V
V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 600V, Vp
≤
1200V
µs
V = +15V to 0V
GE
µJ
ns
A
T
J
= 150°C
V
CC
= 600V, I
F
= 6.0A
V
GE
= 15V, Rg = 10
2
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© 2013 International Rectifier
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November 4, 2013
40
35
30
Load Current ( A )
IRG7PH37K10DPbF/IRG7PH37K10D-EPbF
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 86.7W
25
20
15
10
5
0
0.1
1
f , Frequency ( kHz )
10
Square Wave:
V
CC
I
Diode as specified
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
50
250
40
200
Ptot (W)
30
IC (A)
150
20
100
10
50
0
25
50
75
100
125
150
TC (°C)
0
25
50
75
100
125
150
TC (°C)
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
100
10µsec
10
IC (A)
IC (A)
Fig. 3
- Power Dissipation vs.
Case Temperature
100
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
DC
10
1
10
100
V CE (V)
1000
10000
Fig. 4
- Forward SOA
T
C
= 25°C; T
J
≤
150°C; V
GE
= 15V
3
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© 2013 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
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November 4, 2013
60
50
40
ICE (A)
IRG7PH37K10DPbF/IRG7PH37K10D-EPbF
60
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
ICE (A)
50
40
30
20
10
0
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
30
20
10
0
0
2
4
6
8
10
V CE (V)
0
2
4
6
8
10
V CE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
60
50
40
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
60
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
IF (A)
50
40
30
20
10
0
-40°C
25°C
150°C
30
20
10
0
0
2
4
6
8
10
V CE (V)
0
1
2
3
4
5
6
7
VF (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 20µs
12
10
8
V CE (V)
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
12
10
ICE = 7.5A
ICE = 15A
8
V CE (V)
ICE = 30A
6
4
2
0
5
10
V GE (V)
15
20
ICE = 7.5A
ICE = 15A
ICE = 30A
6
4
2
0
5
10
V GE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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© 2013 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
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November 4, 2013
12
10
8
V CE (V)
IRG7PH37K10DPbF/IRG7PH37K10D-EPbF
60
50
ICE = 7.5A
ICE = 15A
40
ICE (A)
ICE = 30A
6
4
2
0
5
10
V GE (V)
15
20
30
20
10
0
4
6
8
10
V GE (V)
12
14
16
TJ = 25°C
TJ = 150°C
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 150°C
4.0
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
tdOFF
3.0
2.0
EON
Swiching Time (ns)
tF
100
Energy (mJ)
1.0
EOFF
tdON
tR
0.0
0
10
IC (A)
20
30
10
0
5
10
15
IC (A)
20
25
30
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 0.62mH; V
CE
= 600V, R
G
= 10; V
GE
= 15V
2.6
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 150°C; L = 0.62mH; V
CE
= 600V, R
G
= 10; V
GE
= 15V
1000
tdOFF
2.2
Swiching Time (ns)
Energy (mJ)
EON
1.8
EOFF
1.4
tF
100
tdON
tR
10
0
20
40
60
80
100
1.0
Rg (
)
0
20
40
60
80
100
RG (
)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 0.62mH; V
CE
= 600V, I
CE
= 15A; V
GE
= 15V
5
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© 2013 International Rectifier
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 150°C; L = 0.62mH; V
CE
= 600V, I
CE
= 15A; V
GE
= 15V
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November 4, 2013
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