IRF6892STRPbF
IRF6892STR1PbF
l
l
l
l
l
l
l
l
l
PD - 97770
RoHS Compliant and Halogen Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for Control FET Application
Compatible with existing Surface Mount Techniques
100% Rg tested
DirectFET
®
plus
MOSFET with Schottky Diode
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
6.0nC
R
DS(on)
Q
gs2
2.3nC
R
DS(on)
Q
oss
16nC
25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V
Q
rr
39nC
V
gs(th)
1.8V
17nC
G
D
S
S
D
S
Applicable DirectFET Outline and Substrate Outline
S1
S2
S3C
M2
M4
S3C
L4
L6
ISOMETRIC
L8
Description
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6892SPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
8.0
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±16
28
22
125
220
240
22
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
10
20
30
40
ID= 22A
VDS= 20V
VDS= 13V
VDS= 5V
A
mJ
A
ID = 28A
6.0
4.0
2.0
0.0
2
4
TJ = 125°C
TJ = 25°C
6
8
10
12
14
16
50
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.2mH, R
G
= 25Ω, I
AS
= 22A.
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4/4/12
IRF6892STR/TR1PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
–––
290
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
11
1.3
2.0
1.8
-9.8
–––
–––
–––
–––
–––
17
4.0
2.3
6.0
4.7
8.3
16
0.4
12
30
16
9.5
2510
850
190
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
ns
–––
–––
1.7
2.6
2.1
–––
500
5.0
100
-100
–––
25
–––
–––
–––
–––
–––
–––
nC
Ω
Conditions
V
GS
= 0V, I
D
= 1mA
V
mV/°C Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 28A
mΩ
V
GS
= 4.5V, I
D
= 22A
i
i
V
mV/°C
μA
mA
V
DS
= V
GS
, I
D
= 50μA
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
V
DS
= 13V, I
D
= 22A
V
DS
= 13V
nA
S
nC
V
GS
= 4.5V
I
D
= 22A
See Fig. 2 & 15
V
DS
= 10V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 22A
R
G
= 1.8Ω
Ãi
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
22
37
76
220
0.75
33
56
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ãg
p-n junction diode.
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
T
J
= 25°C, I
F
= 22A
di/dt = 300A/μs
i
i
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
2
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IRF6892STR/TR1PbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.1
1.3
42
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
D = 0.50
Thermal Response ( ZthJA )
el
jl
kl
fl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.016
Max.
60
–––
–––
3.0
–––
Units
°C/W
eÃ
W/°C
10
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Mounted on minimum footprint full size board with metalized
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Used double sided cooling, mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
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IRF6892STR/TR1PbF
1000
TOP
VGS
10V
4.5V
3.5V
3.2V
2.9V
2.7V
2.6V
2.4V
1000
TOP
VGS
10V
4.5V
3.5V
3.2V
2.9V
2.7V
2.6V
2.4V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
0.1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
1
100
0.1
1
10
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
Fig 5.
Typical Output Characteristics
2.0
ID = 28A
ID, Drain-to-Source Current (A)
100
T J = 150°C
T J = 25°C
T J = -40°C
Typical RDS(on) (Normalized)
V GS = 10V
V GS = 4.5V
1.5
10
1.0
1
VDS = 15V
≤60μs
PULSE WIDTH
0.1
1
2
3
4
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
14
T J = 25°C
12
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
10000
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
10
8
6
4
2
0
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80 100 120 140 160 180
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6892STR/TR1PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
10msec
100μsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
10
10
T J = 150°C
T J = 25°C
T J = -40°C
1
0.1
TA = 25°C
VGS = 0V
1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Tj = 150°C
Single Pulse
0.01
0.01
0.1
1
DC
10
100
VDS , Drain-toSource Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
140
120
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig 11.
Maximum Safe Operating Area
2.5
100
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
ID = 1.0mA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
1000
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
1.3A
2.1A
BOTTOM 22A
800
600
400
200
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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