StrongIRFET
IRFH7004PbF
Applications
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HEXFET
®
Power MOSFET
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
40V
1.1mΩ
1.4mΩ
259A
100A
c
Benefits
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Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
RoHS Compliant containing no Lead, no Bromide,
and no Halogen
PQFN 5X6 mm
Base Part Number
IRFH7004PBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7004TRPBF
RDS(on), Drain-to -Source On Resistance (m
Ω)
6.0
ID = 100A
300
250
4.0
ID, Drain Current (A)
Limited By Package
200
150
100
50
2.0
T J = 125°C
T J = 25°C
0.0
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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© 2013 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
June 7, 2013
IRFH7004PbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
E
AS (Thermally limited)
E
AS (tested)
I
AR
E
AR
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Max.
259
164
100
Units
A
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Single Pulse Avalanche Energy
1247
156
1.3
± 20
-55 to + 150
W
W/°C
V
°C
Avalanche Characteristics
e
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Ãd
l
191
314
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
k
Junction-to-Case
k
d
Parameter
Typ.
0.5
–––
–––
–––
Max.
0.8
15
34
21
Units
°C/W
Junction-to-Ambient
j
Junction-to-Ambient
j
Parameter
Min.
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Typ.
–––
0.033
1.1
1.7
3.0
–––
–––
–––
–––
2.4
Max. Units
–––
–––
1.4
–––
3.9
1.0
150
100
-100
–––
V
V/°C
mΩ
mΩ
V
μA
nA
Ω
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
= 50A
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
g
g
d
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package is limited to 100A by production test
capability. Note that current limitations arising from heating of the
device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.038mH
R
G
= 50Ω, I
AS
= 100A, V
GS
=10V.
I
SD
≤
100A, di/dt
≤
1366A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1 inch square 2 oz copper pad on 1.5 x 1.5 in. board of
FR-4 material.
R
θ
is measured at T
J
approximately 90°C.
This value determined from sample failure population,
starting T
J
= 25°C, L= 0.038mH, R
G
= 50Ω, I
AS
= 100A, V
GS
=10V.
2
www.irf.com
© 2013 International Rectifier
June 7, 2013
IRFH7004PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min.
117
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
129
34
40
169
15
51
73
49
6419
952
656
1161
1305
Max. Units
–––
194
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
DS
=20V
V
GS
= 10V
I
D
= 100A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
I
D
= 30A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
g
ns
pF
g
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.95
2.5
35
35
26
27
1.5
Max. Units
100
Conditions
Ãd
1247
1.3
–––
–––
–––
–––
–––
–––
f
Reverse Recovery Charge
Reverse Recovery Current
D
MOSFET symbol
showing the
G
A
integral reverse
S
p-n junction diode.
V
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
V/ns T
J
= 175°C, I
S
= 100A, V
DS
= 40V
ns T
J
= 25°C
V
R
= 34V,
T
J
= 125°C
I
F
= 100A
di/dt = 100A/μs
nC T
J
= 25°C
T
J
= 125°C
A
T
J
= 25°C
A
g
g
3
www.irf.com
© 2013 International Rectifier
June 7, 2013
IRFH7004PbF
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
4.25V
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
4.25V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
1000
BOTTOM
100
100
4.25V
10
10
4.25V
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
1
100
0.1
1
10
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
10000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 100A
VGS = 10V
ID, Drain-to-Source Current (A)
1000
100
T J = 150°C
T J = 25°C
10
VDS = 10V
≤
60μs PULSE WIDTH
1.0
3
4
5
6
7
8
9
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 100A
VDS= 32V
VDS= 20V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0
20
40
60
80
100 120 140 160
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2013 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
June 7, 2013
IRFH7004PbF
10000
10000
1000
100
10
1
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
Limited by
package
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
1000
T J = 150°C
100
T J = 25°C
10
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
100μsec
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode
Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
1.0
49
48
47
46
45
44
43
42
41
40
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Temperature ( °C )
Id = 1.0mA
VDS= 0V to 32V
0.8
Energy (μJ)
0.6
0.4
0.2
0.0
0
5
10
15
20
25
30
35
40
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( m
Ω)
VDS, Drain-to-Source Voltage (V)
Fig 12.
Typical C
OSS
Stored Energy
VGS = 5.0V
VGS = 6.0V
40
30
VGS = 7.0V
VGS = 8.0V
VGS =10V
20
10
0
0
200
400
600
800
1000 1200 1400
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
www.irf.com
© 2013 International Rectifier
June 7, 2013
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