RF Small Signal Bipolar Transistor, LEADLESS MINIMOLD PACKAGE-6
参数名称 | 属性值 |
厂商名称 | NEC(日电) |
包装说明 | SMALL OUTLINE, R-PDSO-F6 |
针数 | 6 |
Reach Compliance Code | unknown |
JESD-30 代码 | R-PDSO-F6 |
端子数量 | 6 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | FLAT |
端子位置 | DUAL |
UPA863TD-T3 | UPA863TD-T3FB-A | UPA863TD-T3FB | UPA863TD-FB | UPA863TD-FB-A | |
---|---|---|---|---|---|
描述 | RF Small Signal Bipolar Transistor, LEADLESS MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6 |
包装说明 | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-F6 | LEADLESS MINIMOLD PACKAGE-6 | LEADLESS MINIMOLD PACKAGE-6 | LEADLESS MINIMOLD PACKAGE-6 |
Reach Compliance Code | unknown | compliant | compliant | compliant | compliant |
JESD-30 代码 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 |
端子数量 | 6 | 6 | 6 | 6 | 6 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES |
端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
厂商名称 | NEC(日电) | - | - | NEC(日电) | NEC(日电) |
是否Rohs认证 | - | 符合 | 不符合 | 不符合 | 符合 |
最大集电极电流 (IC) | - | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
基于收集器的最大容量 | - | 0.7 pF | 0.7 pF | 0.7 pF | 0.7 pF |
集电极-发射极最大电压 | - | 3 V | 3 V | 3 V | 3 V |
配置 | - | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS |
最高频带 | - | L BAND | L BAND | L BAND | L BAND |
JESD-609代码 | - | e6 | e0 | e0 | e6 |
元件数量 | - | 2 | 2 | 2 | 2 |
峰值回流温度(摄氏度) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 260 |
极性/信道类型 | - | NPN | NPN | NPN | NPN |
端子面层 | - | TIN BISMUTH | TIN LEAD | TIN LEAD | TIN BISMUTH |
处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 10 |
晶体管应用 | - | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | - | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | - | 12000 MHz | 12000 MHz | 12000 MHz | 12000 MHz |
Base Number Matches | - | 1 | 1 | 1 | - |
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