SRAM Module, 256KX4, 30ns, CMOS, CDMA28
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 30 ns |
| 其他特性 | TTL COMPATIBLE INPUTS/OUTPUTS |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-CDMA-T28 |
| JESD-609代码 | e0 |
| 内存密度 | 1048576 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 256KX4 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.4 |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.122 A |
| 最小待机电流 | 4.5 V |
| 最大压摆率 | 0.32 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| IDT7M4042S30C | IDT7M4042S55C | IDT7M4042S55CB | IDT7M4042S80CB | IDT7M4042S35C | IDT7M4042S35CB | IDT7M4042S45C | IDT7M4042S45CB | IDT7M4042S65CB | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 256KX4, 30ns, CMOS, CDMA28 | SRAM Module, 256KX4, 55ns, CMOS, CDMA28 | SRAM Module, 256KX4, 55ns, CMOS, CDMA28 | SRAM Module, 256KX4, 80ns, CMOS, CDMA28 | SRAM Module, 256KX4, 35ns, CMOS, CDMA28 | SRAM Module, 256KX4, 35ns, CMOS, CDMA28 | SRAM Module, 256KX4, 45ns, CMOS, CDMA28 | SRAM Module, 256KX4, 45ns, CMOS, CDMA28 | SRAM Module, 256KX4, 65ns, CMOS, CDMA28 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | 3A001.A.2.C | 3A001.A.2.C | EAR99 | 3A001.A.2.C | EAR99 | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 30 ns | 55 ns | 55 ns | 80 ns | 35 ns | 35 ns | 45 ns | 45 ns | 65 ns |
| 其他特性 | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-CDMA-T28 | R-CDMA-T28 | R-CDMA-T28 | R-CDMA-T28 | R-CDMA-T28 | R-CDMA-T28 | R-CDMA-T28 | R-CDMA-T28 | R-CDMA-T28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 125 °C | 125 °C | 70 °C | 125 °C | 70 °C | 125 °C | 125 °C |
| 最低工作温度 | - | - | -55 °C | -55 °C | - | -55 °C | - | -55 °C | -55 °C |
| 组织 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP28,.4 | DIP28,.4 | DIP28,.4 | DIP28,.4 | DIP28,.4 | DIP28,.4 | DIP28,.4 | DIP28,.4 | DIP28,.4 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.122 A | 0.122 A | 0.122 A | 0.122 A | 0.122 A | 0.122 A | 0.122 A | 0.122 A | 0.122 A |
| 最小待机电流 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 最大压摆率 | 0.32 mA | 0.32 mA | 0.32 mA | 0.32 mA | 0.32 mA | 0.32 mA | 0.32 mA | 0.32 mA | 0.32 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 厂商名称 | IDT (Integrated Device Technology) | - | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 筛选级别 | - | - | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | 38535Q/M;38534H;883B | - | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
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