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IDT70T9159L7PF

产品描述Dual-Port SRAM, 8KX9, 18ns, CMOS, PQFP100, TQFP-100
产品类别存储    存储   
文件大小184KB,共16页
制造商IDT (Integrated Device Technology)
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IDT70T9159L7PF概述

Dual-Port SRAM, 8KX9, 18ns, CMOS, PQFP100, TQFP-100

IDT70T9159L7PF规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明TQFP-100
针数100
Reach Compliance Codenot_compliant
ECCN代码EAR99
最长访问时间18 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)83 MHz
I/O 类型COMMON
JESD-30 代码S-PQFP-G100
JESD-609代码e0
长度14 mm
内存密度73728 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度9
湿度敏感等级3
功能数量1
端口数量2
端子数量100
字数8192 words
字数代码8000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织8KX9
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LFQFP
封装等效代码QFP100,.63SQ,20
封装形状SQUARE
封装形式FLATPACK, LOW PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)240
电源2.5 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.003 A
最小待机电流2.4 V
最大压摆率0.2 mA
最大供电电压 (Vsup)2.6 V
最小供电电压 (Vsup)2.4 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn85Pb15)
端子形式GULL WING
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间20
宽度14 mm

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HIGH-SPEED 2.5V
16/8K X 9 SYNCHRONOUS
PIPELINED
DUAL-PORT STATIC RAM
.eatures
x
x
PRELIMINARY
IDT70T9169/59L
x
x
x
x
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed clock to data access
– Commercial:7.5/9/12ns (max.)
– Industrial: 9ns (max.)
Low-power operation
– IDT70T9169/59L
Active: 225mW (typ.)
Standby: 1.5mW (typ.)
Flow-Through or Pipelined output mode on either Port via
the
FT/PIPE
pins
Counter enable and reset features
Dual chip enables allow for depth expansion without
additional logic
x
x
x
x
Full synchronous operation on both ports
– 4.0ns setup to clock and 0.5ns hold on all control, data, and
address inputs
– Data input, address, and control registers
– Fast 7.5ns clock to data out in the Pipelined output mode
– Self-timed write allows fast cycle time
– 12ns cycle time, 83MHz operation in Pipelined output mode
LVTTL- compatible, single 2.5V (±100mV) power supply
Industrial temperature range (–40°C to +85°C) is
available for 66MHz
Available in a 100-pin Thin Quad Flatpack (TQFP) and 100-
pin fine pitch Ball Grid Array (fpBGA) packages.
.unctional Block Diagram
R/W
L
OE
L
CE
0L
CE
1L
R/W
R
OE
R
CE
0R
CE
1R
1
0
0/1
1
0
0/1
FT/PIPE
L
0/1
1
0
0
1
0/1
FT/PIPE
R
I/O
0L
- I/O
8L
I/O
0R
- I/O
8R
I/O
Control
I/O
Control
A
13L
(1)
A
0L
CLK
L
ADS
L
CNTEN
L
CNTRST
L
Counter/
Address
Reg.
MEMORY
ARRAY
Counter/
Address
Reg.
A
13R
(1)
A
0R
CLK
R
ADS
R
CNTEN
R
CNTRST
R
5654 drw 01
NOTE:
1. A
13
is a NC for IDT70T9159.
JULY 2002
1
©2002 Integrated Device Technology, Inc.
DSC-5654/1

IDT70T9159L7PF相似产品对比

IDT70T9159L7PF IDT70T9159L12PF IDT70T9159L7BF IDT70T9169L9PFI IDT70T9159L9PF IDT70T9159L9PFI IDT70T9159L9BFI IDT70T9169L12BF
描述 Dual-Port SRAM, 8KX9, 18ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 8KX9, 25ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 8KX9, 18ns, CMOS, PBGA100, FPBGA-100 Dual-Port SRAM, 16KX9, 20ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 8KX9, 20ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 8KX9, 20ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 8KX9, 20ns, CMOS, PBGA100, FPBGA-100 Dual-Port SRAM, 16KX9, 25ns, CMOS, PBGA100, FPBGA-100
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 QFP QFP BGA QFP QFP QFP BGA BGA
包装说明 TQFP-100 TQFP-100 FPBGA-100 TQFP-100 TQFP-100 TQFP-100 FPBGA-100 LFBGA, BGA100,10X10,32
针数 100 100 100 100 100 100 100 100
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
是否无铅 含铅 - 含铅 含铅 - 含铅 含铅 含铅
最长访问时间 18 ns 25 ns 18 ns 20 ns 20 ns 20 ns 20 ns -
其他特性 FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE -
最大时钟频率 (fCLK) 83 MHz 50 MHz 83 MHz 66 MHz 66 MHz 66 MHz 66 MHz -
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON -
JESD-30 代码 S-PQFP-G100 S-PQFP-G100 S-PBGA-B100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PBGA-B100 -
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 -
长度 14 mm 14 mm 10 mm 14 mm 14 mm 14 mm 10 mm -
内存密度 73728 bit 73728 bit 73728 bit 147456 bit 73728 bit 73728 bit 73728 bit -
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM -
内存宽度 9 9 9 9 9 9 9 -
湿度敏感等级 3 3 3 3 3 3 3 -
功能数量 1 1 1 1 1 1 1 -
端口数量 2 2 2 2 2 2 2 -
端子数量 100 100 100 100 100 100 100 -
字数 8192 words 8192 words 8192 words 16384 words 8192 words 8192 words 8192 words -
字数代码 8000 8000 8000 16000 8000 8000 8000 -
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
最高工作温度 70 °C 70 °C 70 °C 85 °C 70 °C 85 °C 85 °C -
组织 8KX9 8KX9 8KX9 16KX9 8KX9 8KX9 8KX9 -
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 LFQFP LFQFP LFBGA LFQFP LFQFP LFQFP LFBGA -
封装等效代码 QFP100,.63SQ,20 QFP100,.63SQ,20 BGA100,10X10,32 QFP100,.63SQ,20 QFP100,.63SQ,20 QFP100,.63SQ,20 BGA100,10X10,32 -
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE -
封装形式 FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH -
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL -
峰值回流温度(摄氏度) 240 240 225 240 240 240 225 -
电源 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V -
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
座面最大高度 1.6 mm 1.6 mm 1.5 mm 1.6 mm 1.6 mm 1.6 mm 1.5 mm -
最大待机电流 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A -
最小待机电流 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V -
最大压摆率 0.2 mA 0.15 mA 0.2 mA 0.22 mA 0.175 mA 0.2 mA 0.22 mA -
最大供电电压 (Vsup) 2.6 V 2.6 V 2.6 V 2.6 V 2.6 V 2.6 V 2.6 V -
最小供电电压 (Vsup) 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V -
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V -
表面贴装 YES YES YES YES YES YES YES -
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS -
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL -
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn63Pb37) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn63Pb37) -
端子形式 GULL WING GULL WING BALL GULL WING GULL WING GULL WING BALL -
端子节距 0.5 mm 0.5 mm 0.8 mm 0.5 mm 0.5 mm 0.5 mm 0.8 mm -
端子位置 QUAD QUAD BOTTOM QUAD QUAD QUAD BOTTOM -
处于峰值回流温度下的最长时间 20 20 30 20 20 20 30 -
宽度 14 mm 14 mm 10 mm 14 mm 14 mm 14 mm 10 mm -
Base Number Matches - 1 1 1 1 1 1 -

 
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