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IDT70T9159L9BFI: 产品描述Dual-Port SRAM, 8KX9, 20ns, CMOS, PBGA100, FPBGA-100; 产品类别存储存储; 文件大小184KB，共16页; 制造商IDT (Integrated Device Technology)

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IDT70T9159L9BFI概述

Dual-Port SRAM, 8KX9, 20ns, CMOS, PBGA100, FPBGA-100

IDT70T9159L9BFI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	BGA
包装说明	FPBGA-100
针数	100
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最长访问时间	20 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	66 MHz
I/O 类型	COMMON
JESD-30 代码	S-PBGA-B100
JESD-609代码	e0
长度	10 mm
内存密度	73728 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	9
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	100
字数	8192 words
字数代码	8000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	8KX9
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LFBGA
封装等效代码	BGA100,10X10,32
封装形状	SQUARE
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	2.5 V
认证状态	Not Qualified
座面最大高度	1.5 mm
最大待机电流	0.003 A
最小待机电流	2.4 V
最大压摆率	0.22 mA
最大供电电压 (Vsup)	2.6 V
最小供电电压 (Vsup)	2.4 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn63Pb37)
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	30
宽度	10 mm
Base Number Matches	1

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HIGH-SPEED 2.5V

16/8K X 9 SYNCHRONOUS

PIPELINED

DUAL-PORT STATIC RAM

.eatures

PRELIMINARY

IDT70T9169/59L

True Dual-Ported memory cells which allow simultaneous

access of the same memory location

High-speed clock to data access

– Commercial:7.5/9/12ns (max.)

– Industrial: 9ns (max.)

Low-power operation

– IDT70T9169/59L

Active: 225mW (typ.)

Standby: 1.5mW (typ.)

Flow-Through or Pipelined output mode on either Port via

the

FT/PIPE

pins

Counter enable and reset features

Dual chip enables allow for depth expansion without

additional logic

Full synchronous operation on both ports

– 4.0ns setup to clock and 0.5ns hold on all control, data, and

address inputs

– Data input, address, and control registers

– Fast 7.5ns clock to data out in the Pipelined output mode

– Self-timed write allows fast cycle time

– 12ns cycle time, 83MHz operation in Pipelined output mode

LVTTL- compatible, single 2.5V (±100mV) power supply

Industrial temperature range (–40°C to +85°C) is

available for 66MHz

Available in a 100-pin Thin Quad Flatpack (TQFP) and 100-

pin fine pitch Ball Grid Array (fpBGA) packages.

.unctional Block Diagram

R/W

0/1

FT/PIPE

0/1

FT/PIPE

I/O

- I/O

I/O

- I/O

I/O

Control

I/O

Control

13L

(1)

CLK

ADS

CNTEN

CNTRST

Counter/

Address

Reg.

MEMORY

ARRAY

Counter/

Address

Reg.

13R

(1)

CLK

ADS

CNTEN

CNTRST

5654 drw 01

NOTE:

1. A

is a NC for IDT70T9159.

JULY 2002

DSC-5654/1

IDT70T9159L9BFI相似产品对比

	IDT70T9159L9BFI	IDT70T9159L12PF	IDT70T9159L7BF	IDT70T9169L9PFI	IDT70T9159L9PF	IDT70T9159L9PFI	IDT70T9169L12BF	IDT70T9159L7PF
描述	Dual-Port SRAM, 8KX9, 20ns, CMOS, PBGA100, FPBGA-100	Dual-Port SRAM, 8KX9, 25ns, CMOS, PQFP100, TQFP-100	Dual-Port SRAM, 8KX9, 18ns, CMOS, PBGA100, FPBGA-100	Dual-Port SRAM, 16KX9, 20ns, CMOS, PQFP100, TQFP-100	Dual-Port SRAM, 8KX9, 20ns, CMOS, PQFP100, TQFP-100	Dual-Port SRAM, 8KX9, 20ns, CMOS, PQFP100, TQFP-100	Dual-Port SRAM, 16KX9, 25ns, CMOS, PBGA100, FPBGA-100	Dual-Port SRAM, 8KX9, 18ns, CMOS, PQFP100, TQFP-100
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	BGA	QFP	BGA	QFP	QFP	QFP	BGA	QFP
包装说明	FPBGA-100	TQFP-100	FPBGA-100	TQFP-100	TQFP-100	TQFP-100	LFBGA, BGA100,10X10,32	TQFP-100
针数	100	100	100	100	100	100	100	100
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
是否无铅	含铅	-	含铅	含铅	-	含铅	含铅	含铅
最长访问时间	20 ns	25 ns	18 ns	20 ns	20 ns	20 ns	-	18 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	-	FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	66 MHz	50 MHz	83 MHz	66 MHz	66 MHz	66 MHz	-	83 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-	COMMON
JESD-30 代码	S-PBGA-B100	S-PQFP-G100	S-PBGA-B100	S-PQFP-G100	S-PQFP-G100	S-PQFP-G100	-	S-PQFP-G100
JESD-609代码	e0	e0	e0	e0	e0	e0	-	e0
长度	10 mm	14 mm	10 mm	14 mm	14 mm	14 mm	-	14 mm
内存密度	73728 bit	73728 bit	73728 bit	147456 bit	73728 bit	73728 bit	-	73728 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	-	DUAL-PORT SRAM
内存宽度	9	9	9	9	9	9	-	9
湿度敏感等级	3	3	3	3	3	3	-	3
功能数量	1	1	1	1	1	1	-	1
端口数量	2	2	2	2	2	2	-	2
端子数量	100	100	100	100	100	100	-	100
字数	8192 words	8192 words	8192 words	16384 words	8192 words	8192 words	-	8192 words
字数代码	8000	8000	8000	16000	8000	8000	-	8000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	85 °C	70 °C	85 °C	-	70 °C
组织	8KX9	8KX9	8KX9	16KX9	8KX9	8KX9	-	8KX9
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
封装代码	LFBGA	LFQFP	LFBGA	LFQFP	LFQFP	LFQFP	-	LFQFP
封装等效代码	BGA100,10X10,32	QFP100,.63SQ,20	BGA100,10X10,32	QFP100,.63SQ,20	QFP100,.63SQ,20	QFP100,.63SQ,20	-	QFP100,.63SQ,20
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	-	SQUARE
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	-	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL
峰值回流温度（摄氏度）	225	240	225	240	240	240	-	240
电源	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	-	2.5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
座面最大高度	1.5 mm	1.6 mm	1.5 mm	1.6 mm	1.6 mm	1.6 mm	-	1.6 mm
最大待机电流	0.003 A	0.003 A	0.003 A	0.003 A	0.003 A	0.003 A	-	0.003 A
最小待机电流	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	-	2.4 V
最大压摆率	0.22 mA	0.15 mA	0.2 mA	0.22 mA	0.175 mA	0.2 mA	-	0.2 mA
最大供电电压 (Vsup)	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	-	2.6 V
最小供电电压 (Vsup)	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	-	2.4 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	-	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	-	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	-	COMMERCIAL
端子面层	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	-	Tin/Lead (Sn85Pb15)
端子形式	BALL	GULL WING	BALL	GULL WING	GULL WING	GULL WING	-	GULL WING
端子节距	0.8 mm	0.5 mm	0.8 mm	0.5 mm	0.5 mm	0.5 mm	-	0.5 mm
端子位置	BOTTOM	QUAD	BOTTOM	QUAD	QUAD	QUAD	-	QUAD
处于峰值回流温度下的最长时间	30	20	30	20	20	20	-	20
宽度	10 mm	14 mm	10 mm	14 mm	14 mm	14 mm	-	14 mm
Base Number Matches	1	1	1	1	1	1	-	-

IDT70T9159L9BFI

IDT70T9159L9BFI概述

IDT70T9159L9BFI规格参数

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IDT70T9159L9BFI相似产品对比

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