OM6005SC OM6007SC OM6105SC OM6107SC
OM6006SC OM6008SC OM6106SC OM6108SC
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-258AA PACKAGE
100V Thru 500V, Up To 35 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Bi-Lateral Zener Gate Protection (Optional)
Fast Switching, Low Drive Current
Ease Of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6105SC series.
MAXIMUM RATINGS
PART NUMBER
OM6005SC/OM6105SC
OM6006SC/OM6106SC
OM6007SC/OM6107SC
OM6008SC/OM6108SC
Note:
V
DS
100 V
200 V
400 V
500 V
R
DS(on)
.065
.095
0.3
0.4
I
D
35 A
30 A
15 A
13 A
3.1
OM6105SC thru OM6108SC is supplied with zener gate protection.
OM6005SC thru OM6008SC is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS
OM6005SC - 6008SC
1 - DRAIN
WITH ZENER CLAMPS
OM6105SC - 6108SC
1 - DRAIN
3 - GATE
3 - GATE
ZENERS
2 - SOURCE
2 - SOURCE
4 11 R5
Supersedes 1 07 R4
3.1 - 75
3.1
OM6005SC - OM6108SC
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6105)
Gate-Body Leakage (OM6005)
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
35
1.1
0.1
0.2
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6106)
Gate-Body Leakage (OM6006)
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
30
0.1
0.2
(T
C
= 25°C unless otherwise noted)
STATIC P/N OM6105SC/OM6005SC (100V)
Min. Typ. Max. Units Test Conditions
100
2.0
4.0
± 500
± 100
0.25
1.0
V
V
nA
nA
mA
mA
A
1.3
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A,
T
C
= 125 C
STATIC P/N OM6106SC/OM6006SC (200V)
Min. Typ. Max. Units Test Conditions
200
2.0
4.0
± 500
± 100
0.25
1.0
V
V
nA
nA
mA
mA
A
1.36 1.52
.085 .095
0.14 0.17
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A,
T
C
= 125 C
Static Drain-Source On-State
Static Drain-Source On-State
0.55 0.65
.09
0.11
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward
Transductance
1
9.0
10
2700
1300
470
28
45
100
50
S(W
)
V
DS
2 V
DS(on)
, I
D
= 20 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
20 A
R
g
= 5.0
W
, V
G
= 10V
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10.0 12.5
2400
600
250
25
60
85
38
S(W
)
V
DS
2 V
DS(on)
, I
D
= 16 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75 V, I
D
@
16 A
R
g
= 5.0
W
,V
GS
= 10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source
Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
400
- 40
- 160
- 2.5
A
A
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source
Current
1
(Body Diode)
- 30
- 120
-2
350
T
C
= 25 C, I
S
= -40 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
ns
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
A
A
V
(W )
3.1 - 76
DYNAMIC
DYNAMIC
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -30 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6107)
Gate-Body Leakage (OM6007)
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
15
2.0
0.25
0.1
0.2
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6108)
Gate-Body Leakage (OM6008)
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
13
2.1
0.3
0.1
0.2
(T
C
= 25°C unless otherwise noted)
STATIC P/N OM6107SC/OM6007SC (400V)
Min. Typ. Max. Units Test Conditions
400
2.0
4.0
± 500
± 100
0.25
1.0
V
V
nA
nA
mA
mA
A
2.4
0.3
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8.0 A
V
GS
= 10 V, I
D
= 8.0 A
V
GS
= 10 V, I
D
= 8.0 A,
T
C
= 125 C
STATIC P/N OM6108SC/OM6008SC (500V)
Min. Typ. Max. Units Test Conditions
500
2.0
4.0
± 500
± 100
0.25
1.0
V
V
nA
nA
mA
mA
A
2.8
0.4
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.0 A
V
GS
= 10 V, I
D
= 7.0 A
V
GS
= 10 V, I
D
= 7.0 A,
T
C
= 125 C
0.50 0.60
0.66 0.88
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward
Transductance
1
6.0
9.6
2900
450
150
30
40
80
30
S(W
)
V
DS
2 V
DS(on)
, I
D
= 8.0 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 200 V, I
D
@
8.0 A
R
g
=5.0
W
, V
GS
=10V
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
5.0
7.2
2600
280
40
30
46
75
31
S(W
)
V
DS
2 V
DS(on)
, I
D
= 7.0 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5.0
W
, V
GS
= 10 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward
Voltage
1
600
- 15
- 60
- 1.6
A
A
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward
Voltage
1
700
- 13
- 52
- 1.4
T
C
= 25 C, I
S
= -15 A, V
GS
= 0
T
J
= 100 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
t
rr
Reverse Recovery Time
Reverse Recovery Time
ns
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
A
A
V
(W )
3.1 - 77
DYNAMIC
DYNAMIC
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
OM6005SC - OM6108SC
S
T
C
= 25 C, I
S
= -13 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
3.1
OM6005SC - OM6108SC
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Junction To Ambient
T
J
T
stg
Lead Temperature
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1
Linear Derating Factor
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150
300
-55 to 150
300
-55 to 150
300
-55 to 150
300
°C
°C
OM6005SC OM6006SC OM6007SC OM6008SC
Units
OM6105SC OM6106SC OM6107SC OM6108SC
100
100
±35
± 25
±160
125
50
1.0
.025
200
200
±30
±19
±120
125
50
1.0
.025
400
400
±15
±9
±60
125
50
1.0
.025
500
500
±13
±8
±52
125
50
1.0
.025
V
V
A
A
A
W
W
W/°C
W/°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitation
= 35 Amps
THERMAL RESISTANCE
(MAXIMUM) at T
A
= 25°C
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
1.0
40
°C/W
°C/W Free Air Operation
POWER DERATING
MECHANICAL OUTLINE
WITH PIN CONNECTION
.165
.155
.695
.685
.270
.240
.045
.035
.835
.815
3.1
.707
.697
.550
.530
1
.750
.500
2
3
.092 MAX.
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.005
.065
.055
.140 TYP.
.200 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
