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SS16HE2

产品描述Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
产品类别分立半导体    二极管   
文件大小200KB,共3页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SS16HE2概述

Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

SS16HE2规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW POWER LOSS
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
参考标准AEC-Q101
最大重复峰值反向电压60 V
表面贴装YES
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL

SS16HE2文档预览

SS12 thru SS115
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Schottky Barrier Rectifier
MECHANICAL DATA
Case:DO-214AC(SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:Matte
tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:Indicated
by cathode band
Weight:0.066
gram (approximately)
DO-214AC(SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 1 A, T
J
=25℃
@ 1 A, T
J
=100℃
Maximum reverse current @ rated VR
T
J
=25
T
J
=100℃
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
SS
12
20
14
20
SS
13
30
21
30
SS
14
40
28
40
SS
15
50
35
50
1
40
SS
16
60
42
60
SS
19
90
63
90
SS
110
100
70
100
SS
115
150
105
150
UNIT
V
V
V
A
A
V
F
0.5
0.4
0.2
0.75
0.65
0.8
0.7
0.1
0.95
0.85
V
I
R
dV/dt
R
θJL
R
θJA
T
J
T
STG
6
-
5
-
10000
28
88
-
2
mA
V/us
O
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1:Pulse test with PW=300u sec, 1% duty cycle
C/W
O
O
- 55 to + 125
- 55 to + 150
- 55 to + 150
C
C
Document Number:DS_D1309022
Version:M13
SS12 thru SS115
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
R3
R2
M2
SS1xx
(Note 1)
Prefix "H"
F3
F2
F4
E3
E2
Note 1: "xx" defines voltage from 20V (SS12) to 150V (SS115)
Suffix "G"
PACKING CODE GREEN COMPOUND
CODE
SMA
SMA
SMA
Folded SMA
Folded SMA
Folded SMA
Clip SMA
Clip SMA
1.800 / 7" Plastic reel
7.500 / 13" Paper reel
7.500 / 13" Plastic reel
1.800 / 7" Plastic reel
7.500 / 13" Paper reel
7.500 / 13" Plastic reel
1.800 / 7" Plastic reel
7.500 / 13" Plastic reel
PACKAGE
PACKING
EXAMPLE
PREFERRED P/N
SS16 R3
SS16 R3G
SS16HR3
PART NO.
SS16
SS16
SS16
H
AEC-Q101
QUALIFIED
PACKING CODE
R3
R3
R3
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CUURVE
1.2
AVERAGE FORWARD CURRENT
(A)
PEAK FORWARD SURGE CURRENT (A)
40
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine-Wave
30
1
SS15-SS115
0.8
0.6
0.4
0.2
0
50
60
70
SS12-SS14
20
10
RESISTIVE OR
INDUCTIVE LOAD
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
80
90
100 110 120 130 140 150 160 170
LEAD TEMPERATURE (
o
C)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT
(A)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
SS12-SS14
SS15-SS115
TJ=125℃
10
10
SS15-SS16
1
1
SS12-SS14
SS115
0.1
TJ=75℃
0.1
SS19-SS110
0.01
TJ=25℃
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
FORWARD VOLTAGE (V)
Document Number:DS_D1309022
Version:M13
SS12 thru SS115
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
100
1000
SS12-SS14
SS15-SS16
SS19-SS115
CAPACITANCE (pF)
TRANSIENT THERMAL
IMPEDANCE (℃/W)
10
100
f=1.0MHz
Vslg=50mVp-p
1
10
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
T-PULSE DURATION(s)
10
100
PACKAGE OUTLINE DIMENSIONS
Unit(mm)
Min
1.27
4.06
2.29
1.99
0.90
4.95
0.10
0.15
Max
1.58
4.60
2.83
2.50
1.41
5.33
0.20
0.31
Unit(inch)
Min
0.050
0.160
0.090
0.078
0.035
0.195
0.004
0.006
Max
0.062
0.181
0.111
0.098
0.056
0.210
0.008
0.012
DIM.
A
B
C
D
E
F
G
H
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
MARKING DIAGRAM
P/N =
G=
YW =
F=
Specific Device Code
Green Compound
Date Code
Factory Code
Unit(mm)
1.68
1.52
3.93
2.41
5.45
Document Number:DS_D1309022
Version:M13

 
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