Buffer/Inverter Based MOSFET Driver, 6A, BICMOS, CDIP8, CERDIP-8
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Microchip(微芯科技) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP8,.3 |
| 针数 | 8 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 高边驱动器 | NO |
| 输入特性 | STANDARD |
| 接口集成电路类型 | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 代码 | R-GDIP-T8 |
| JESD-609代码 | e0 |
| 长度 | 9.652 mm |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出特性 | TOTEM-POLE |
| 标称输出峰值电流 | 6 A |
| 输出极性 | TRUE |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP8,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 电源 | 4.5/18 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 座面最大高度 | 5.08 mm |
| 最大压摆率 | 3 mA |
| 最大供电电压 | 18 V |
| 最小供电电压 | 4.5 V |
| 标称供电电压 | 5 V |
| 表面贴装 | NO |
| 技术 | BICMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 断开时间 | 0.1 µs |
| 接通时间 | 0.1 µs |
| 宽度 | 7.62 mm |
| MIC4420AJB | MIC4429AF | MIC4429AJB | MIC4420AF | |
|---|---|---|---|---|
| 描述 | Buffer/Inverter Based MOSFET Driver, 6A, BICMOS, CDIP8, CERDIP-8 | Buffer/Inverter Based MOSFET Driver, 6A, BICMOS, CDFP10, CERPACK-10 | Buffer/Inverter Based MOSFET Driver, 6A, BICMOS, CDIP8, CERDIP-8 | Buffer/Inverter Based MOSFET Driver, 6A, BICMOS, CDFP10, CERPACK-10 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | DIP | DFP | DIP | DFP |
| 包装说明 | DIP, DIP8,.3 | DFP, FL10,.24 | DIP, DIP8,.3 | DFP, FL10,.24 |
| 针数 | 8 | 10 | 8 | 10 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 高边驱动器 | NO | NO | NO | NO |
| 输入特性 | STANDARD | STANDARD | STANDARD | STANDARD |
| 接口集成电路类型 | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 代码 | R-GDIP-T8 | S-GDFP-F10 | R-GDIP-T8 | S-GDFP-F10 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 长度 | 9.652 mm | 6.12 mm | 9.652 mm | 6.12 mm |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 10 | 8 | 10 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C |
| 输出特性 | TOTEM-POLE | TOTEM-POLE | TOTEM-POLE | TOTEM-POLE |
| 标称输出峰值电流 | 6 A | 6 A | 6 A | 6 A |
| 输出极性 | TRUE | INVERTED | INVERTED | TRUE |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DFP | DIP | DFP |
| 封装等效代码 | DIP8,.3 | FL10,.24 | DIP8,.3 | FL10,.24 |
| 封装形状 | RECTANGULAR | SQUARE | RECTANGULAR | SQUARE |
| 封装形式 | IN-LINE | FLATPACK | IN-LINE | FLATPACK |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | 240 | NOT SPECIFIED | 240 |
| 电源 | 4.5/18 V | 4.5/18 V | 4.5/18 V | 4.5/18 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 2.032 mm | 5.08 mm | 2.032 mm |
| 最大压摆率 | 3 mA | 3 mA | 3 mA | 3 mA |
| 最大供电电压 | 18 V | 18 V | 18 V | 18 V |
| 最小供电电压 | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | NO | YES |
| 技术 | BICMOS | BICMOS | BICMOS | BICMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | FLAT | THROUGH-HOLE | FLAT |
| 端子节距 | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 断开时间 | 0.1 µs | 0.1 µs | 0.1 µs | 0.1 µs |
| 接通时间 | 0.1 µs | 0.1 µs | 0.1 µs | 0.1 µs |
| 宽度 | 7.62 mm | 6.12 mm | 7.62 mm | 6.12 mm |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved