This product complies with RoHS Directive (EU 2002/95/EC).
Zener Diodes
MAZ8xxxG Series
Silicon planar type
For stabilization of power supply
Features
Extremely low noise voltage caused from the diode (2.4 V to
39V, 1/3 to 1/10 of our conventional MAZ3xxx series)
Extremely good rising performance (in the low-current range)
Easy-to-select the optimum diode because of their
finely
divided
zener-voltage ranks
Guaranteed reliability, equivalent to that of conventional products
(Mini type package)
Allowing to reduce the mounting area, thickness and weight
substantially, compared with those of the conventional products
Allowing both reflow and
flow
mode of automatic soldering
Allowing automatic mounting by an existing chip mounter
Package
Code
SMini2-F3
Name
Pin
1: Anode
2: Cathode
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Repetitive peak forward current
Total power dissipation
*
Junction temperature
Storage temperature
Symbol
I
FRM
P
T
T
j
T
stg
–55 to +150
Note) *: P
T
= 150 mW achieved with a printed circuit board.
Zener rise operating resistance
Zener operating resistance
Reverse current
Ma
int
en
Zener voltage
*1
ce
Forward voltage
/D
Parameter
isc
on
Common Electrical Characteristics
T
a
= 25°C±3°C
Symbol
V
F
V
Z
R
ZK
R
Z
I
R
S
Z
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Refer to the list of the electrical
characteristics within part numbers
Rating
200
150
150
Unit
mA
°C
°C
mW
Conditions
Min
Typ
0.9
Max
1.0
I
F
= 10 mA
I
Z
I
Z
Specified value
Specified value
Specified value
Specified value
I
Z
V
R
I
Z
Specified value
Refer to the list of the
electrical characteristics
within part numbers
M
ain
Di
sc te
on na
tin nc
ue e/
d
tin
ue
di
an
Temperature coefficient of zener voltage
*2
2. Absolute frequency of input and output is 5 MHz.
3. The temperature must be controlled 25°C for V
Z
measurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
4. *1 : V
Z
guaranteed 20 ms after current
flow.
*2 : T
j
= 25°C to 150°C
Marking symbol
Unit
V
V
W
W
mA
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Pl
Publication date: May 2009
SKE00032DED
1
This product complies with RoHS Directive (EU 2002/95/EC).
MAZ8xxxG Series
P
T
T
a
250
Heat sink
Copper foil
0.8 mm
×
0.8 mm
10
2
T
a
=
25°C
Static
Charac-
teristics
MAZ8039G
MAZ8024G
I
Z
V
Z
MAZ8068G
MAZ8075G
MAZ8082G
MAZ8091G
I
Z
V
Z
10
MAZ8100G
2
MAZ8160G
MAZ8200G
MAZ8240G
Total power dissipation P
T
(mW)
Zener current I
Z
(mA)
MAZ8062G
200
10
10
150
1
MAZ8051G
Zener current I
Z
(mA)
1
100
10
−1
MAZ8043G
10
−1
M
ain
Di
sc te
on na
tin nc
ue e/
d
MAZ8047G
MAZ8056G
50
10
−2
10
−2
0
0
40
80
120
160
200
10
−3
0
2
4
6
8
10
12
10
−3
0
10
20
30
MAZ8360G
MAZ8390G
T
a
=
25°C
Static
Charac-
teristics
MAZ8110G
MAZ8130G
40
50
60
I
Z
V
Z
10
2
MAZ8110G
MAZ8130G
MAZ8160G
MAZ8200G
MAZ8240G
MAZ8024G
MAZ8027G
MAZ8033G
MAZ8039G
MAZ8043G
MAZ8047G
MAZ8051G
MAZ8056G
MAZ8062G
MAZ8068G
MAZ8075G
MAZ8082G
MAZ8360G
MAZ8390G
MAZ8091G
MAZ8100G
10
T
j
=
25°C
Dynamic
Charac-
teristics
10
2
10
1
10
−1
10
−1
10
−2
10
−2
10
−3
Temperature coefficient of zener voltage S
Z
(mV /
°C
)
/D
10
2
isc
I
F
V
F
on
tin
ue
Zener voltage V
Z
(V)
di
0
2
4
6
8
10
12
10
−3
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Zener operating resistance R
uc
Ω
t
)
(
e ped
life
an ut
as lat
cy
on es
cle
ic. t in
sta
co fo
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/en at
/ ion
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I
Z
V
Z
R
Z
I
Z
T
j
=
25°C
Dynamic
Charac-
teristics
10
3
MAZ8024G
MAZ8390G
Ambient temperature T
a
(
°C
)
Zener voltage V
Z
(V)
Zener voltage V
Z
(V)
T
a
=
25°C
Zener current I
Z
(mA)
Zener current I
Z
(mA)
Z
10
2
1
MAZ8160G
MAZ8043G
10
MAZ8068G
MAZ8082G
MAZ8100G
MAZ8062G
MAZ8056G
MAZ8051G
MAZ8039G
MAZ8047G
0
10
20
30
40
50
60
Zener voltage V
Z
(V)
1
10
−1
1
10
10
2
10
3
Zener current I
Z
(mA)
S
Z
I
Z
T
a
=
25°C
25
ce
MAZ8240G
Forward current I
F
(mA)
Ma
int
en
10
an
20
15
MAZ8160G
1
10
Pl
MAZ8100G
MAZ8068G
MAZ8039G
MAZ8024G
5
10
−1
0
10
−2
0
0.2
0.4
0.6
0.8
1.0
1.2
−5
0
10
20
30
40
50
Forward voltage V
F
(V)
Zener current I
Z
(mA)
SKE00032DED
5
Microchip MCU
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