SMV1P06: 产品描述Small Signal Field-Effect Transistor, 0.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4; 产品类别分立半导体晶体管; 文件大小204KB，共1页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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SMV1P06概述

Small Signal Field-Effect Transistor, 0.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4

SMV1P06规格参数

参数名称	属性值
厂商名称	Vishay(威世)
零件包装代码	DIP
包装说明	IN-LINE, R-PDIP-T3
针数	4
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	DRAIN
配置	SINGLE
最小漏源击穿电压	60 V
最大漏极电流 (ID)	0.6 A
最大漏源导通电阻	1.6 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDIP-T3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
极性/信道类型	P-CHANNEL
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	DUAL
晶体管元件材料	SILICON

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SMV1P06相似产品对比

	SMV1P06	SMV1P20	SMD15N05	SMU15N05	SMD10P05	SMU10P05	SMV1P10	SMV1P15	SMD10P05L
描述	Small Signal Field-Effect Transistor, 0.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4	Transistor	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 3.3A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	Power Field-Effect Transistor, 2A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,	Power Field-Effect Transistor, 2A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251	Small Signal Field-Effect Transistor, 0.7A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SIMILAR TO TO-250, DIP-4	Small Signal Field-Effect Transistor, 0.3A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4	Power Field-Effect Transistor, 2A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
厂商名称	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)
包装说明	IN-LINE, R-PDIP-T3	,	,	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PDIP-T3	IN-LINE, R-PDIP-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
配置	SINGLE	Single	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
极性/信道类型	P-CHANNEL	P-CHANNEL	N-CHANNEL	N-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
表面贴装	NO	NO	YES	NO	YES	NO	NO	NO	YES
ECCN代码	EAR99	-	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	DRAIN	-	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
最小漏源击穿电压	60 V	-	-	50 V	50 V	50 V	100 V	150 V	50 V
最大漏极电流 (ID)	0.6 A	-	-	3.3 A	2 A	2 A	0.7 A	0.3 A	2 A
最大漏源导通电阻	1.6 Ω	-	-	0.1 Ω	0.28 Ω	0.28 Ω	1.2 Ω	4.5 Ω	0.28 Ω
JESD-30 代码	R-PDIP-T3	-	-	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3	R-PDIP-T3	R-PDIP-T3	R-PSSO-G2
元件数量	1	-	-	1	1	1	1	1	1
端子数量	3	-	-	3	2	3	3	3	2
封装主体材料	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	-	-	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE
认证状态	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
端子形式	THROUGH-HOLE	-	-	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING
端子位置	DUAL	-	-	SINGLE	SINGLE	SINGLE	DUAL	DUAL	SINGLE
晶体管元件材料	SILICON	-	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
最高工作温度	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-	150 °C

SMV1P06

SMV1P06概述

SMV1P06规格参数

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