Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Vishay(威世) |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| 配置 | Single |
| 最大漏极电流 (Abs) (ID) | 3.3 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 40 W |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| SMD15N05 | SMV1P20 | SMU15N05 | SMD10P05 | SMU10P05 | SMV1P06 | SMV1P10 | SMV1P15 | SMD10P05L | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Transistor | Power Field-Effect Transistor, 3.3A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | Power Field-Effect Transistor, 2A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Power Field-Effect Transistor, 2A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | Small Signal Field-Effect Transistor, 0.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4 | Small Signal Field-Effect Transistor, 0.7A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SIMILAR TO TO-250, DIP-4 | Small Signal Field-Effect Transistor, 0.3A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4 | Power Field-Effect Transistor, 2A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
| 厂商名称 | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) |
| 包装说明 | , | , | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PDIP-T3 | IN-LINE, R-PDIP-T3 | IN-LINE, R-PDIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 配置 | Single | Single | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE WITH BUILT-IN DIODE |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 极性/信道类型 | N-CHANNEL | P-CHANNEL | N-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 表面贴装 | YES | NO | NO | YES | NO | NO | NO | NO | YES |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | - | 150 °C | - | 150 °C |
| ECCN代码 | - | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | - | - | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 最小漏源击穿电压 | - | - | 50 V | 50 V | 50 V | 60 V | 100 V | 150 V | 50 V |
| 最大漏极电流 (ID) | - | - | 3.3 A | 2 A | 2 A | 0.6 A | 0.7 A | 0.3 A | 2 A |
| 最大漏源导通电阻 | - | - | 0.1 Ω | 0.28 Ω | 0.28 Ω | 1.6 Ω | 1.2 Ω | 4.5 Ω | 0.28 Ω |
| JESD-30 代码 | - | - | R-PSIP-T3 | R-PSSO-G2 | R-PSIP-T3 | R-PDIP-T3 | R-PDIP-T3 | R-PDIP-T3 | R-PSSO-G2 |
| 元件数量 | - | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | - | - | 3 | 2 | 3 | 3 | 3 | 3 | 2 |
| 封装主体材料 | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | - | IN-LINE | SMALL OUTLINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE |
| 认证状态 | - | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 端子形式 | - | - | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| 端子位置 | - | - | SINGLE | SINGLE | SINGLE | DUAL | DUAL | DUAL | SINGLE |
| 晶体管元件材料 | - | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
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