DIGITRON SEMICONDUCTORS
MR2000 SERIES
MAXIMUM RATINGS
Ratings
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Non-repetitive peak reverse voltage
(half-wave, single phase, 60Hz peak)
RMS forward current
Average rectified forward current
(single phase, resistive load, 60Hz, T
C
= 150°C)
MEDIUM CURRENT SILICON RECTIFIERS
MR
2000
50
MR
2001
100
MR
2002
200
MR
2004
400
MR
2006
600
MR
2008
800
MR
2010
1000
Symbol
V
RRM
V
RWM
V
R
V
RSM
I
(RMS)
I
O
Unit
Volts
60
120
240
480
40
20
720
960
1200
Volts
Amps
Amps
Non-repetitive peak surge current
(surge applied @ rated load conditions, half
wave, single phase, 60Hz)
Operating and storage temperature range
I
FSM
T
J
, T
stg
400(1 cycle)
-65 to +175
Amps
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R
ӨJC
Maximum
1.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum instantaneous forward voltage
(I
F
= 63A, T
C
= 25°C)
Maximum reverse current (rated dc voltage)
T
C
= 25°C
T
C
= 100°C
Symbol
V
F
Maximum
1.1
Unit
Volts
I
R
100
500
µA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121127
DIGITRON SEMICONDUCTORS
MR2000 SERIES
MEDIUM CURRENT SILICON RECTIFIERS
Duty cycle = D = t
p
/t
1
Peak power = P
pk
is peak of an
equivalent square
power pulse
To determine maximum junction temperature of the diode in a given situation the following procedure is recommended:
The temperature of the case should be measured using a thermocouple placed on the case at the temperature reference
point. The thermal mass connected to the case is normally large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation once steady state conditions are achieved. Using the
measured value of T
C
the junction temperature may be determined by: T
J
= T
C
+
ΔT
JC
, where
ΔT
JC
is the increase in
junction temperature above the case temperature.
It may be determined by
ΔT
JC
= P
pk
●
R
ØJC
[D + (1-D)
●
r(t
r
+t
p
) –r(t
1
)] where r(t) = normalized value of transient
thermal resistance at time t from figure 6, and r(t
1
+t
p
) = normalized value of transient thermal resistance at time t
1
+t
p
.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121127
DIGITRON SEMICONDUCTORS
MR2000 SERIES
MEDIUM CURRENT SILICON RECTIFIERS
As the frequency of the input signal is increased, the reverse
recovery time of the diode (figure 9) becomes significant,
resulting in an increasing ac voltage component across R
L
which is opposite in polarity to the forward current, thereby
reducing the value of the efficiency factor,
σ,
as shown in
figure 10.
It should be emphasized that figure 10 shows waveform
efficiency only; it does not provide a measure of diode
losses. Data was obtained by measuring the ac component of
V
O
with a true rms ac voltmeter and the dc component with
a dc voltmeter. The data was used in Equation 1 to obtain
points for figure 10
.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121127
DIGITRON SEMICONDUCTORS
MR2000 SERIES
MECHANICAL CHARACTERISTICS
Case
Marking
Normal polarity
Reverse polarity
DO-4(R)
Alpha-numeric
Cathode is stud
Anode is stud (add “R” suffix)
MEDIUM CURRENT SILICON RECTIFIERS
DO-4(R)
Inches
Min
Max
-
0.078
0.422 0.453
-
0.405
-
0.800
0.420 0.440
-
0.250
-
0.424
0.066
-
Millimeters
Min
Max
-
1.981
10.719 11.506
-
10.287
-
20.320
10.668 11.176
-
6.350
-
10.770
1.676
-
A
B
C
D
E
F
G
H
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121127
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