DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X
UHF power transistor
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 22
Philips Semiconductors
Product specification
UHF power transistor
FEATURES
•
High efficiency
•
Small size discrete power amplifier
•
900 MHz and 1.9 GHz operating
areas
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
•
Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343 package.
PINNING
PIN
1
2
3
4
DESCRIPTION
collector
emitter
base
emitter
Marking code: T5.
1
BFG10W/X
fpage
4
3
2
MBK523
Top view
Fig.1 SOT343.
QUICK REFERENCE DATA
RF performance at T
amb
= 25
°C
in a common-emitter test circuit.
MODE OF OPERATION
Pulsed, class-AB, duty cycle: < 1 : 2; t
p
= 10 ms
Pulsed, class-AB, duty cycle: < 1 : 8; t
p
= 4.6 ms
f
(GHz)
1.9
0.9
0.9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 102
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
MIN.
MAX.
20
10
2.5
250
250
400
+150
175
V
V
V
mA
mA
mW
°C
°C
UNIT
V
CE
(V)
3.6
6
6
P
L
(mW)
200
650
360
G
p
(dB)
≥5
≥10
≥12.5
η
c
(%)
≥50
≥50
≥50
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 102
°C;
note 1;
P
tot
= 400 mW
VALUE
180
UNIT
K/W
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
1995 Sep 22
2
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS
T
j
= 25
°C
(unless otherwise specified).
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
open emitter; I
C
= 0.1 mA
open base; I
C
= 5 mA
open collector; I
E
= 0.1 mA
V
CE
= 6 V; V
BE
= 0
I
C
= 50 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 0; V
CE
= 6 V; f = 1 MHz
MIN.
20
10
2.5
−
25
−
−
BFG10W/X
MAX.
−
−
−
100
−
3
2
V
V
V
UNIT
µA
pF
pF
10
3
handbook, full pagewidth
Zth j-a
(K/W)
δ
=1
0.75
10
2
0.5
0.33
0.2
MBG431
10
0.1
0.05
0.02
0.01
P
δ
= T
tp
tp
T
1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22
3
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
handbook, halfpage
2.0
MLC819
Cc
(pF)
1.5
1.0
0.5
0
0
2
4
6
8
10
V CB (V)
Fig.3
Collector capacitance as a function of
collector-base voltage.
1995 Sep 22
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION
RF performance at T
amb
= 25
°C
in a common-emitter test circuit.
MODE OF OPERATION
Pulsed, class-AB, duty cycle: < 1 : 2; t
p
= 10 ms
Pulsed, class-AB, duty cycle: < 1 : 8; t
p
= 5 ms
f
(GHz)
1.9
0.9
0.9
Ruggedness in class-AB operation
V
CE
(V)
3.6
6
6
P
L
(mW)
200
650
360
G
p
(dB)
BFG10W/X
η
c
(%)
≥50;
typ. 60
≥50
≥50
≥5;
typ. 7
≥10
≥12.5
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; t
p
= 4.6 ms; duty cycle of 1 : 8
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; t
p
= 10 ms; duty cycle of 1 : 2.
MLC820
MBG194
handbook, halfpage
10
Gp
(dB)
8
η
c
100
η
c
(%)
80
handbook, halfpage
16
80
Gp
η
c
60
Gp
η
c
(%)
(dB)
12
6
Gp
60
8
40
4
40
4
20
2
20
0
0
100
200
300
0
400
500
P L (mW)
0
0.3
20
0.5
0.7
0.9
1.1
P L (mW)
Pulsed, class-AB operation.
V
CE
= 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2.
Circuit optimized for P
L
= 200 mW.
Pulsed, class-AB operation.
V
CE
= 6 V; f = 900 MHz; duty cycle < 1 : 8.
Circuit optimized for P
L
= 600 mW.
Fig.4
Power gain and efficiency as functions
of load power; typical values.
Fig.5
Power gain and efficiency as functions
of load power; typical values.
1995 Sep 22
5
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