ASDL-6771
High Sensitivity Silicon NPN Phototransistor in Side Look Package
Data Sheet
Description
ASDL-6771 is a silicon phototransistor encapsulated in red
Side Look package. It has high sensitivity, low dark current
and a wide spectral response. Collector is denoted by a
flat on the packaging diagram and the shorter of the two
leads. This device matches with infrared emitter ASDL-
4772 and is ideal for low cost, high volume applications.
Features
•
Side Look Package
•
Wide spectral response
•
High Sensitivity
•
High Precision
•
Low Dark Current
•
Narrow Viewing Angle
•
Low Cost
•
Lead Free & ROHS Compliant
Applications
•
Detector in Consumer Electronics
•
Detector Industrial Electronics & Equipment
•
Coin counters
•
Position sensing
•
IR Data Communication
•
Photo Interrupter
Ordering Information
Part Number
ASDL-677-C
ASDL-677-C4
Lead Form
Straight
Color
Clear
Packaging
Tape & Reel
Bulk
Shipping Option
4000pcs
0Kpcs / Carton
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Lead spacing is measured where leads emerge from package
4. Specifications are subject to change without notice.
Absolute Maximum Ratings at T
A
=25°C
Parameter
Power Dissipation
Collector Emitter Voltage
Emitter Collector Voltage
Operating Temperature
Storage Temperature
Junction temperature
Lead Soldering Temperature
[ .6mm (0.06”) From Body ]
Symbol
P
DISS
V
CEO
V
ECo
T
O
T
S
T
J
60°C for 5 seconds
-40
-55
Min.
Max
00
0
5
85
00
0
Unit
mW
V
V
°C
°C
°C
Electrical Characteristics at 25°C
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector Emitter
Saturation Voltage
Collector Dark Current
Thermal Resistance,
Junction to Pin
Symbol
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
I
CEO
Rq
JP
Min.
0
5
0.
0.
50
0.4
00
Typ.
Max.
Unit
V
V
V
nA
°C/W
Condition
Ic= mA
Ee = 0mW/cm
Ie = 00µA
Ee = 0mW/cm
Ic = 00µA
Ee = mW/cm
V
CE
=0V
Ee=0mW/cm
Optical Characteristics at 25°C
Parameter
Viewing Angle
Wavelength of Peak sensitivity
Spectral BandWidth
Rise Time
Symbol
θ
/
λ
PK
Δλ
t
r
400
Min.
Typ.
0
900
900
0
00
Max.
Unit
Deg
nm
nm
µs
V
CC
= 5V
I
C
= mA
R
L
= KΩ
V
CC
= 5V
I
C
= mA
R
L
= KΩ
V
CE
= 5V
Ee = mW/cm
λ = 940nm
Condition
Fall Time
t
f
0
µs
On State Collector Current
I
C(ON)
.
5
mA
Typical Electrical/Optical Characteristics Curves (T
A
=25˚C unless otherwise indicated)
Collector Power Dissipation Pc(mW)
120
100
80
60
40
20
0
-40 -20
0
20 40 60 80 100
Iceo-Collector Dark Current-
A
100
10
1
0.1
0.01
0
0
40
80
120
Ta-Ambient Temperature-
o
C
FIGURE 1. COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE
Ta-Ambient Temperature-
o
C
FIGURE 2. COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE
200
180
160
140
120
100
80
60
40
20
0
Tr Tf-Rise and Fall Time-
Relative Collector Current
Vcc=5V
VRL=1V
F =100Hz
PW =1ms
s
4.0
3.0
2.0
1.0
0
Vce= 5V
0
2
4
6
8
10
0
1
2
3
4
5
RL-Load Resistance-K
FIGURE 3. RISE AND FALL TIME VS LOAD RESISTANCE
Ee-Irradiance-mW/cm
2
FIGURE 4. RELATIVE COLLECTOR CURRENT VS IRRADIANCE
0
o
10
o
20
o
30
o
Relative Sensitivity
1.0
0.9
0.8
0.7
40
50
60
o
o
o
70
o
80
o
90
0.5 0.3
0.1
0.2 0.4 0.6
o
FIGURE 5. SENSITIVITY DIAGRAM
For company and product information, please go to our web site:
WWW.liteon.com
or
http://optodatabook.liteon.com/databook/databook.aspx
Data subject to change. Copyright © 007 Lite-On Technology Corporation. All rights reserved.
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