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MT9HTF6472FY-53XX

产品描述DDR DRAM Module, 64MX72, CMOS, LEAD FREE, FBDIMM-240
产品类别存储    存储   
文件大小668KB,共39页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准  
下载文档 详细参数 选型对比 全文预览

MT9HTF6472FY-53XX概述

DDR DRAM Module, 64MX72, CMOS, LEAD FREE, FBDIMM-240

MT9HTF6472FY-53XX规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码DIMM
包装说明DIMM,
针数240
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式SINGLE BANK PAGE BURST
其他特性AUTO/SELF REFRESH
JESD-30 代码R-XDMA-N240
JESD-609代码e4
内存密度4831838208 bit
内存集成电路类型DDR DRAM MODULE
内存宽度72
功能数量1
端口数量1
端子数量240
字数67108864 words
字数代码64000000
工作模式SYNCHRONOUS
组织64MX72
封装主体材料UNSPECIFIED
封装代码DIMM
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度)260
认证状态Not Qualified
自我刷新YES
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装NO
技术CMOS
端子面层Gold (Au)
端子形式NO LEAD
端子位置DUAL
处于峰值回流温度下的最长时间30

文档预览

下载PDF文档
Preliminary
240-Pin 512MB, 1GB DDR2 SDRAM FBDIMM (SR, FB, x72)
Features
DDR2 SDRAM FBDIMM
MT9HTF6472F – 512MB
MT9HTF12872F – 1GB
For the latest data sheet, refer to Micron’s Web site:
www.micron.com
Features
• 240-pin DDR2 fully buffered, dual in-line memory
module (FBDIMM) with ECC to detect and report
channel errors to the host memory controller
• Fast data transfer rates: PC2-4200 and PC2-5300
using 533 MT/s and 667 MT/s DDR2 SDRAM
components
• 3.2 Gb/s and 4.0 Gb/s link transfer rates
• High-speed, differential, point-to-point link
between host memory controller and the AMB using
serial, dual-simplex bit lanes
10-pair southbound (data path to FBDIMM)
14-pair northbound (data path from FBDIMM)
• Fault tolerant; can work around a bad bit lane in
each direction
• High-density scaling with up to 8 dual-rank modules
(288 DDR2 SDRAM devices) per channel
• SMBus interface to AMB for configuration register
access
• In-band and out-of-band command access
• Deterministic protocol
Enables memory controller to optimize DRAM
accesses for maximum performance
Delivers precise control and repeatable memory
behavior
• Automatic DDR2 SDRAM bus and channel
calibration
• Transmitter de-emphasis to reduce ISI
• MBIST and IBIST test functions
• Transparent mode for DDR2 SDRAM test support
• V
DD
= V
DD
Q = +1.8V for DDR2 SDRAM
• V
REF
= 0 .9V SDRAM C/A termination
• V
CC
= 1.5V for advanced memory buffer (AMB)
• V
DDSPD
= +1.7V to +3.6V for SPD EEPROM
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
• Supports 95°C operation with 2X refresh (
t
REFI =
7.8µs at or below 85°C;
t
REFI = 3.9µs above 85°C)
Figure 1:
240-Pin FBDIMM (MO-256 R/C A)
PCB height: 30.35mm (1.19in)
Options
• Package
240-pin FBDIMM (lead-free)
• Frequency/CL
1
3.75ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
• PCB height
30.35mm (1.19in)
Notes: 1. CL = CAS (READ) latency.
Marking
Y
-667
-53E
PDF: 09005aef81a2f1eb/Source: 09005aef81a2f20c
HTF9C64_128x72F_1.fm - Rev. B 4/06 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.

MT9HTF6472FY-53XX相似产品对比

MT9HTF6472FY-53XX MT9HTF12872FY-53EA2E2 MT9HTF12872FY-53EE1D4 MT9HTF12872FY-53EE1E4 MT9HTF6472FY-53EB2E2 MT9HTF6472FY-53EC2 MT9HTF6472FY-53EB3D1 MT9HTF6472FY-53EB3E2
描述 DDR DRAM Module, 64MX72, CMOS, LEAD FREE, FBDIMM-240 Memory IC, 128MX72, CMOS, PDMA240 Memory IC, 128MX72, CMOS, PDMA240 Memory IC, 128MX72, CMOS, PDMA240 Memory IC, 64MX72, CMOS, PDMA240 DDR DRAM Module, 64MX72, CMOS, LEAD FREE, FBDIMM-240 Memory IC, 64MX72, CMOS, PDMA240 Memory IC, 64MX72, CMOS, PDMA240
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
包装说明 DIMM, DIMM, DIMM240,40 DIMM, DIMM240,40 DIMM, DIMM240,40 DIMM, DIMM240,40 DIMM, DIMM, DIMM240,40 DIMM, DIMM240,40
Reach Compliance Code compliant compliant compliant compliant unknown compliant unknown unknown
JESD-30 代码 R-XDMA-N240 R-PDMA-N240 R-PDMA-N240 R-PDMA-N240 R-PDMA-N240 R-XDMA-N240 R-PDMA-N240 R-PDMA-N240
内存密度 4831838208 bit 9663676416 bit 9663676416 bit 9663676416 bit 4831838208 bit 4831838208 bit 4831838208 bit 4831838208 bit
内存宽度 72 72 72 72 72 72 72 72
端子数量 240 240 240 240 240 240 240 240
字数 67108864 words 134217728 words 134217728 words 134217728 words 67108864 words 67108864 words 67108864 words 67108864 words
字数代码 64000000 128000000 128000000 128000000 64000000 64000000 64000000 64000000
组织 64MX72 128MX72 128MX72 128MX72 64MX72 64MX72 64MX72 64MX72
封装主体材料 UNSPECIFIED PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY UNSPECIFIED PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
ECCN代码 EAR99 EAR99 EAR99 EAR99 - EAR99 - -
最大时钟频率 (fCLK) - 266 MHz 266 MHz 266 MHz 266 MHz - 266 MHz 266 MHz
I/O 类型 - COMMON COMMON COMMON COMMON - COMMON COMMON
最高工作温度 - 95 °C 95 °C 95 °C 95 °C 85 °C 95 °C 95 °C
输出特性 - 3-STATE 3-STATE 3-STATE 3-STATE - 3-STATE 3-STATE
封装等效代码 - DIMM240,40 DIMM240,40 DIMM240,40 DIMM240,40 - DIMM240,40 DIMM240,40
电源 - 1.5,1.8 V 1.5,1.8 V 1.5,1.8 V 1.5,1.8 V - 1.5,1.8 V 1.5,1.8 V
刷新周期 - 8192 8192 8192 8192 - 8192 8192
温度等级 - OTHER OTHER OTHER OTHER OTHER OTHER OTHER
端子节距 - 1 mm 1 mm 1 mm 1 mm - 1 mm 1 mm
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