Data Sheet PD No. 60179 revM
Not recommended for new design:
please use IRS21571D
IR21571(S) & (PbF)
FULLY INTEGRATED BALLAST CONTROL IC
Features
•
Programmable preheat time & frequency
•
Programmable ignition ramp
•
Protection from failure-to-strike
•
Lamp filament sensing & protection
•
Protection from operation below resonance -
•
•
•
Thermal overload protection
•
Programmable deadtime
•
Integrated 600V level-shifting gate driver
•
Internal 15.6V zener clamp diode on VCC
•
Micropower startup (150uA)
•
Latch immunity protection on all leads
•
ESD protection on all leads
•
Parts also available LEAD-FREE
0.2V CS threshold sync’d to falling edge on LO
Protection from low-line condition
Automatic restart for lamp exchange
Description
The IR21571 is a fully integrated, fully protected 600V ballast control IC designed
to drive virtually all types of rapid start fluorescent lamp ballasts. Externally pro-
grammable features such as preheat time & frequency, ignition ramp characteris-
tics, and running mode operating frequency provide a high degree of flexibility for
the ballast design engineer. Comprehensive protection features such as protec-
tion from failure of a lamp to strike, filament failures, low dc bus conditions, thermal
overload, or lamp failure during normal operation, as well as an automatic restart
function, have been included in the design. The heart of this control IC is a variable
frequency oscillator with externally programmable deadtime. Precise control of a
50% duty cycle is accomplished using a T-flip-flop. The IR21571 is available in both
16 pin DIP and 16 pin narrow body SOIC packages.
Packages
16 Lead SOIC
(narrow body)
16 Lead PDIP
Typical Connection
+ Rectified AC Line
+ V
BUS
R2
R1
VDC
R
Supply
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
HO
C1
C
PH
C
RAMP
R
T
C
START
R
START
C
T
R
OC
R
DT
R
PH
R
RUN
CPH
VS
R
GHS
C
BS
D
BOOT
C
VCC
D1
C
BLOCK
L
RES
IR21571
RPH
VB
C
SNUBBER
RT
VCC
RUN
COM
CT
LO
D2
R3
R
GLS
R5
R4
C
RES
DT
CS
OC
SD
C2
R
CS
V
BUS
return
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1
IR21571(S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
LO
I
OMAX
I
RT
V
CT
V
DC
I
CPH
I
RPH
I
RUN
I
DT
V
CS
I
CS
I
OC
I
SD
I
CC
dV/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
Maximum allowable output current (either output) due to
external power transistor miller effect
R
T
pin current
C
T
pin voltage
V
DC
pin voltage
CPH pin current
RPH pin current
RUN pin current
Deadtime pin current
Current sense pin voltage
Current sense pin current
Over-current threshold pin current
Shutdown pin current
Supply current (note 1)
Allowable offset voltage slew rate
Package power dissipation @ T
A
≤
+25°C
P
D =
(T
JMAX
-T
A
)/Rth
JA
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(16 lead PDIP)
(16 lead SOIC)
(16 lead PDIP)
(16 lead SOIC)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-500
-5
-0.3
-0.3
-5
-5
-5
-5
-0.3
-5
-5
-5
-20
-50
—
—
—
—
-55
-55
—
Max.
625
V
B
+ 0.3
V
B
+ 0.3
V
CC
+ 0.3
500
5
5.5
V
CC
+ 0.3
5
5
5
5
5.5
5
5
5
20
50
1.60
1.00
75
115
150
150
300
Units
V
mA
V
mA
V
mA
V/ns
W
°C/W
°C
Note 1:
This IC contains a zener clamp structure between the chip V
CC
and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V
CLAMP
specified in the Electrical Characteristics section.
2
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IR21571(S) & (PbF)
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
V
BS
V
S
V
CC
I
CC
V
DC
C
T
R
DT
R
OC
I
RT
I
RPH
I
RUN
I
SD
I
CS
T
J
VBSMIN
Definition
High side floating supply voltage
Steady state high side floating supply offset voltage
Supply voltage
Supply current
V
DC
lead voltage
C
T
lead capacitance
Deadtime resistance
Over-current (CS+) threshold programming resistance
R
T
lead current (Note 3)
RPH lead current (Note 3)
RUN lead current (Note 3)
Shutdown lead current
Current sense lead current
Junction temperature
Minimum required VBS voltage for proper HO functionality
Min.
V
CC
- 0.7
-3.0
V
CCUV+
Note 2
0
220
1.0
Max.
V
CLAMP
600
V
CLAMP
10
VCC
—
Units
V
mA
V
pF
—
50
-50
450
450
1
1
125
5
—
-500
0
0
-1
-1
-40
—
kΩ
uA
mA
o
C
V
Electrical Characteristics
V
CC
= V
BS
= V
BIAS
= 14V +/- 0.25V, R
T
= 40.0kΩ, C
T
= 470 pF, RPH and RUN leads no connection, V
CPH
= 0.0V,
R
DT
= 6.1kΩ, R
OC
= 20.0kΩ, V
CS
= 0.5V, V
SD
= 0.0V, C
L
= 1000pF, T
A
= 25
o
C unless otherwise specified.
Supply Characteristics
Symbol Definition
V
CC
supply undervoltage positive going
threshold
V
UVHYS
V
CC
supply undervoltage lockout hysteresis
I
QCCUV
UVLO mode quiescent current
I
QCCFLT
Fault-mode quiescent current
I
QCC
I
CC50K
V
CLAMP
Note 2:
Note 3:
Quiescent V
CC
supply current
V
CC
supply current, f= 50kHz
V
CC
zener clamp voltage
V
CCUV+
Min.
10.5
1.5
50
75
2.9
4.0
14.5
Typ.
11.4
1.8
150
200
3.8
5.5
15.6
Max.
12.4
Units
V
Test Conditions
V
CC
rising from 0V
2.2
300
300
4.3
7.0
16.5
µA
mA
V
V
CC
< V
CCUV-
SD=5V, CS = 2V or
Tj > T
SD
R
T
no connection, C
T
connected to COM
R
T
=36kΩ, R
DT
=
5.6kΩ, C
T
=220pF
I
CC
= 10mA
Enough current should be supplied into the VCC lead to keep the internal 15.6V zener clamp diode on this lead
regulating its voltage.
Due to the fact that the RT input is a voltage-controlled current source, the total RT lead current is the sum of all
the parallel current sources connected to that lead. For optimum oscillator current mirror performance, this total
current should be kept between 50µA and 500µA. During the preheat mode, the total current flowing out of the RT
lead consists of the RPH lead current plus the current due to the RT resistor. During the run mode, the total RT lead
current consists of the RUN lead current plus the current due to the RT resistor.
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3
IR21571(S) & (PbF)
Electrical Characteristics (cont.)
V
CC
= V
BS
= V
BIAS
= 14V +/- 0.25V, R
T
= 40.0kΩ, C
T
= 470 pF, RPH and RUN leads no connection, V
CPH
= 0.0V,
R
DT
= 6.1kΩ, R
OC
= 20.0kΩ, V
CS
= 0.5V, V
SD
= 0.0V, C
L
= 1000pF, T
A
= 25
o
C unless otherwise specified.
Floating Supply Characteristics
Symbol Definition
I
QBS0
Quiescent V
BS
supply current
I
QBS1
Quiescent V
BS
supply current
I
LK
Offset supply leakage current
Min.
0
5
—
Typ.
0
35
50
Max.
15
65
µA
Units
µA
Test Conditions
—
V
HO
= V
S
V
HO
= V
B
V
B
= V
S
= 600V
Oscillator I/O Characteristics
Symbol Definition
fosc
d
V
CT+
V
CT-
V
CTFLT
V
RT
V
RTFLT
tdlo
tdho
Oscillator frequency
Oscillator duty cycle
Upper C
T
ramp voltage threshold
Lower C
T
ramp voltage threshold
Fault-mode C
T
lead voltage
R
T
lead voltage
Fault-mode R
T
lead voltage
LO output deadtime
HO output deadtime
Min.
45.5
49.5
3.7
1.85
—
1.85
—
2
2
Typ.
48
50
4.0
2.0
0
2.0
0
2.3
2.3
Max.
50.5
50.5
4.3
2.15
50
2.15
50
2.5
2.5
Units Test Conditions
kHz
%
V
mV
V
mV
µsec
SD = 5V, CS = 2V,
or Tj > TSD
SD = 5V, CS = 2V,
or Tj > TSD
R
T
= 16.9kΩ, R
DT
=
6.1kΩ, C
T
=470pF
Preheat Characteristics
Symbol Definition
I
CPH
V
CPHIGN
V
CPHRUN
V
CPHCLMP
V
CPHFLT
CPH lead charging current
CPH lead lgnition mode threshold voltage
CPH lead run mode threshold voltage
CPH lead clamp voltage
Fault-mode CPH lead voltage
Min.
0.72
3.7
4.7
9.0
—
Typ.
0.85
4.0
5.15
9.5
0
Max.
0.98
4.3
5.45
10.5
300
Units Test Conditions
µA
V
mV
I
CPH
= 1mA
SD = 5V, CS = 2V,
or Tj > TSD
V
CPH
= 5.3V
RPH
Characteristics
Symbol Definition
I
RPHLK
Open circuit RPH lead leakage current
V
RPHFLT
Fault-mode RPH lead voltage
Min.
—
—
Typ.
0.01
0
Max.
0.1
50
Units
µA
mV
Test Conditions
V
RPH
= 5V,V
RPH
= 6V
SD = 5V, CS = 2V,
or Tj > TSD
4
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IR21571(S) & (PbF)
Electrical Characteristics (cont.)
V
CC
= V
BS
= V
BIAS
= 14V +/- 0.25V, R
T
= 40.0kΩ, C
T
= 470 pF, RPH and RUN leads no connection, V
CPH
= 0.0V,
R
DT
= 6.1kΩ, R
OC
= 20.0kΩ, V
CS
= 0.5V, V
SD
= 0.0V, C
L
= 1000pF, T
A
= 25
o
C unless otherwise specified.
RUN
Characteristics
Symbol Definition
I
RUNLK
Open circuit RUN lead leakage current
V
RUNFLT
Fault-mode RUN lead voltage
Min.
—
—
Typ.
0.01
0
Max.
0.1
50
Units
µA
mV
Test Conditions
V
RUN
= 5V
SD = 5V, CS = 2V,
or Tj > TSD
Protection Circuitry Characteristics
Symbol Definition
V
SD+
V
SDHYS
V
CS+
V
CS-
T
CS
V
DC+
V
DC-
T
SD
Rising shutdown lead threshold voltage
Shutdown pin threshold hysteresis
Over-current sense threshold voltage
Under-current sense threshold voltage
Over-current sense propogation delay
Low V
BUS
/rectified line input upper threshold
Low V
BUS
/rectified line input lower threshold
Thermal shutdown junction temperature
Min.
1.9
100
0.99
0.15
100
5.0
2.85
150
Typ.
2.1
150
1.10
0.2
250
5.20
3.3
160
Max.
2.3
200
1.21
0.26
400
5.6
3.3
170
Units
V
mV
V
nsec
V
o
C
Test Conditions
Delay from CS to LO
Note 4
Gate Driver Output Characteristics
Symbol Definition
VOL
V
OH
tr
tf
Note 4:
Low-level output voltage
High level output voltage
Turn-on rise time
Turn-off fall time
Min.
—
—
55
35
Typ.
0
0
85
45
Max.
100
100
150
100
Units
mV
nsec
Test Conditions
Io = 0
V
BIAS
- V
O,
Io = 0
When the IC senses an overtemperature condition (Tj > 160ºC), the IC is latched off. In order to reset this
Fault Latch, the SD lead must be cycled high and then low, or the V
CC
supply to the IC must be cycled below
the falling undervoltage lockout threshold (V
CCUV-
).
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