电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MAC38-5

产品描述SILICON BIDIRECTIONAL THYRISTORS
文件大小746KB,共4页
制造商Digitron
官网地址http://www.digitroncorp.com
下载文档 全文预览

MAC38-5概述

SILICON BIDIRECTIONAL THYRISTORS

文档预览

下载PDF文档
DIGITRON SEMICONDUCTORS
MAC37 SERIES
MAC38 SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(1)
(T
J
= 110°C)
MAC37-1,MAC38-1
MAC37-2,MAC38-2
MAC37-3,MAC38-3
MAC37-4,MAC38-4
MAC37-5,MAC38-5
MAC37-6,MAC38-6
MAC37-7,MAC38-7
RMS on-state current
Peak non-repetitive surge current
(1 cycle, 60Hz, T
J
= -40 to + 110°C)
Circuit fusing considerations
(T
J
= -40 to + 110°C, t = 8.3ms)
Peak gate power
(2)
Symbol
Value
Unit
V
DRM
25
50
100
200
300
400
500
25
225
210
5.0
0.5
2
-40 to +110
-40 to +150
30
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
Amps
°C
°C
In. lb.
Average gate power
Peak gate current
(2)
Operating junction temperature range
Storage temperature range
Mounting torque
Note 1: For either direction of blocking voltage. V
DRM
for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for open gate conditions. Thyristor devices shall
not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 2: T
J
= 110°C, 1 second maximum duration: 5.0% duty cycle, I
TM
= 10A.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R
ӨJC
Maximum
1.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak blocking current
(either direction)
(V
D
= Rated V
DRM,
T
J
= 110°C)
Peak on-state voltage
(either direction)
(I
TM
= 35A peak)
Gate trigger current
(continuous dc)
(3)
(V
D
= 7V, R
L
= 47Ω)
MT2(+),G(+); MT2(-),G(-)
Gate trigger voltage
(continuous dc)
(3)
(V
D
= 7V, R
L
= 47Ω)
MT2(+),G(+); MT2(-),G(-)
Gate trigger voltage
(continuous dc)
(3)
(V
D
= Rated V
DRM
, R
L
= 100Ω, T
J
= 110°C)
MT2(+),G(+); MT2(-),G(-)
Holding current
(either direction)
(V
D
= 7V, I
TM
= 150mA, gate open)
Gate controlled turn-on time
(I
TM
= 25A, I
GT
= 200mA)
Symbol
I
DRM
V
TM
Min
-
-
Typ.
-
1.4
Max
2.0
1.9
Unit
mA
Volts
I
GT
-
V
GT
-
V
GD
0.2
I
H
t
on
-
-
-
10
1.0
-
75
-
1.0
3.0
20
75
mA
Volts
Volts
mA
µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130207

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 580  1897  1231  1152  918  10  23  30  39  58 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved