DIGITRON SEMICONDUCTORS
MAC320(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Peak repetitive off-state voltage
(1)
(T
J
= -40 to +125°C, ½ sine wave, 50 to 60Hz, gate open)
MAC320-4, MAC320A-4
MAC320-6, MAC320A-6
MAC320-8, MAC320A-8
MAC320-10, MAC320A-10
Peak gate voltage
RMS on-state current
(Full cycle sine wave, 50 to 60Hz, T
C
= 75°C)
Peak non-repetitive surge current
(1 cycle, 60Hz, T
C
= 75°C, preceded and followed by rated current)
Peak gate power
(T
C
= 75°C, t
≤
2µs)
Average gate power
(T
C
= 75°C, t
≤
8.3ms)
Peak gate current
Operating junction temperature range
Storage temperature range
Symbol
Value
Unit
V
DRM
200
400
600
800
10
20
150
20
0.5
2
-40 to +125
-40 to +150
Volts
V
GM
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
GM
T
J
T
stg
Volts
Amps
Amps
Watts
Watts
Amps
°C
°C
Note 1: V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are
exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R
ӨJC
Maximum
1.8
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Peak blocking current
(V
D
= Rated V
DRM
, gate open, T
J
= 25°C)
(V
D
= Rated V
DRM
, gate open, T
J
= 125°C)
Peak on-state voltage
(either direction)
(I
TM
= 28A peak, pulse width
≤
2ms, duty cycle
≤
2%.)
Gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
(V
D
= Rated V
DRM
, R
L
= 10kΩ, T
J
= 110°C)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
Holding current
(either direction)
(V
D
= 12V, I
TM
= 200mA, gate open)
Gate controlled turn-on time
(V
D
= Rated V
DRM
, I
TM
= 28A, I
G
= 120mA, rise time = 0.1µs, pulse width = 2µs)
Critical rate of rise of commutation voltage
(V
D
= Rated V
DRM,
I
TM
= 28A peak, commutating di/dt = 10A/ms, gate unenergized,
T
C
= 75°C)
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
I
DRM
Min
-
-
-
Typ.
-
-
1.4
Max
10
2
1.7
Unit
µA
mA
Volts
V
TM
I
GT
-
-
-
-
50
75
mA
V
GT
-
-
0.2
0.2
0.9
1.4
-
-
6
1.5
2.0
2.5
-
-
40
-
Volts
I
H
t
gt
-
-
mA
µs
dv/dt(c)
-
5
-
V/µs
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130213
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