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ID301

产品描述SILICON CONTROLLED RECTIFIER
产品类别模拟混合信号IC    触发装置   
文件大小95KB,共2页
制造商Digitron
官网地址http://www.digitroncorp.com
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ID301概述

SILICON CONTROLLED RECTIFIER

ID301规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Digitron
Reach Compliance Codeunknow

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DIGITRON SEMICONDUCTORS
ID200-ID203
ID300-ID301
SILICON CONTROLLED RECTIFIER
1.6 AMP
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Ratings
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
On-state current
70°C case
75°C ambient
Peak one cycle surge (non-repetitive) on
state current
Repetitive peak on state current
Rate of rise of on state current
I
2
t (for times > 1.5ms)
Peak gate current
Average gate current
Reverse gate voltage
Storage temperature range
Operating temperature range
I
GM
I
G(AV)
V
GR
T
stg
T
J
(<5ms)
Symbol
V
DRM
V
RRM
V
RSM
I
T(RMS)
ID200
50
50
75
ID201
100
100
150
ID202
150
150
225
ID203
200
200
300
ID300
300
300
400
ID301
400
400
500
Unit
V
V
V
A
mA
A
A
A/µs
A
2
s
mA
mA
V
°C
°C
1.6
450
15
Up to 30
100
0.83
250
25
6
-65 to 150
-40 to 110
I
TSM
I
TRM
di/dt
ELECTRICAL CHARACTERISTICS
(@ 25°C unless otherwise noted)
Test
Off-state current
Symbol
I
DRM
Min.
-
-
-
Reverse current
I
RRM
-
-
-
0.4
On-state voltage
Peak on-voltage
Holding current
Off-state voltage - critical rate of rise
Turn on time
Circuit commutated turn off time
V
GT
V
TM
I
H
dv/dt
t
on
t
q
0.5
0.2
-
0.3
0.4
0.2
-
-
-
Typ.
-
5
-
10
-
-
0.52
0.7
-
-
0.7
-
-
20
1.0
-
Max.
10
100
10
100
200
500
0.8
1.0
-
2.2
3.0
6.0
-
-
-
40
Units
µA
µA
µA
µA
µA
µA
V
V
V
V
mA
mA
mA
V/µS
µs
µs
Test Conditions
V
DRM
= rating, R
GK
= 1KΩ, T = 25°C
V
DRM
= rating, R
GK
= 1KΩ,
T = 110°C
V
RRM
= rating, R
GK
= 1KΩ, T = 25°C
V
RRM
= rating, R
GK
= 1KΩ,
T = 110°C
V
D
= 5V, R
GS
= 10KΩ, T = 25°C
V
D
= 5V, R
GS
= 10KΩ, T = -40°C
V
D
= 5V, R
GS
= 100Ω, T = 25°C
V
D
= 5V, R
GS
= 100Ω, T = -40°C
V
D
= 5V, R
GS
= 100Ω, T = 110°C
I
T
= 4Amp pulse, T = 25°C
R
GK
= 1KΩ, T = 25°C
R
GK
= 1KΩ, T = -40°C
R
GK
= 1KΩ, T = 110°C
V
DRM
= Rated, R
GK
= 1KΩ, T = 110°C
I
G
= 10mA, I
T
= 1A, V
D
= 30V, T = 25°C
Gate trigger current
I
GT
I
T
= I
R
= 1A, R
GK
= 1KΩ, T = 25°C
Blocking voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode through a resistor, 1000 ohms or smaller, or other adequate bias is used.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116

ID301相似产品对比

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描述 SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Digitron Digitron Digitron Digitron Digitron Digitron
Reach Compliance Code unknow unknow unknow unknow unknow unknow
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