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ID201

产品描述SILICON CONTROLLED RECTIFIER
产品类别模拟混合信号IC    触发装置   
文件大小95KB,共2页
制造商Digitron
官网地址http://www.digitroncorp.com
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ID201概述

SILICON CONTROLLED RECTIFIER

ID201规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Digitron
Reach Compliance Codeunknow

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DIGITRON SEMICONDUCTORS
ID200-ID203
ID300-ID301
SILICON CONTROLLED RECTIFIER
1.6 AMP
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Ratings
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
On-state current
70°C case
75°C ambient
Peak one cycle surge (non-repetitive) on
state current
Repetitive peak on state current
Rate of rise of on state current
I
2
t (for times > 1.5ms)
Peak gate current
Average gate current
Reverse gate voltage
Storage temperature range
Operating temperature range
I
GM
I
G(AV)
V
GR
T
stg
T
J
(<5ms)
Symbol
V
DRM
V
RRM
V
RSM
I
T(RMS)
ID200
50
50
75
ID201
100
100
150
ID202
150
150
225
ID203
200
200
300
ID300
300
300
400
ID301
400
400
500
Unit
V
V
V
A
mA
A
A
A/µs
A
2
s
mA
mA
V
°C
°C
1.6
450
15
Up to 30
100
0.83
250
25
6
-65 to 150
-40 to 110
I
TSM
I
TRM
di/dt
ELECTRICAL CHARACTERISTICS
(@ 25°C unless otherwise noted)
Test
Off-state current
Symbol
I
DRM
Min.
-
-
-
Reverse current
I
RRM
-
-
-
0.4
On-state voltage
Peak on-voltage
Holding current
Off-state voltage - critical rate of rise
Turn on time
Circuit commutated turn off time
V
GT
V
TM
I
H
dv/dt
t
on
t
q
0.5
0.2
-
0.3
0.4
0.2
-
-
-
Typ.
-
5
-
10
-
-
0.52
0.7
-
-
0.7
-
-
20
1.0
-
Max.
10
100
10
100
200
500
0.8
1.0
-
2.2
3.0
6.0
-
-
-
40
Units
µA
µA
µA
µA
µA
µA
V
V
V
V
mA
mA
mA
V/µS
µs
µs
Test Conditions
V
DRM
= rating, R
GK
= 1KΩ, T = 25°C
V
DRM
= rating, R
GK
= 1KΩ,
T = 110°C
V
RRM
= rating, R
GK
= 1KΩ, T = 25°C
V
RRM
= rating, R
GK
= 1KΩ,
T = 110°C
V
D
= 5V, R
GS
= 10KΩ, T = 25°C
V
D
= 5V, R
GS
= 10KΩ, T = -40°C
V
D
= 5V, R
GS
= 100Ω, T = 25°C
V
D
= 5V, R
GS
= 100Ω, T = -40°C
V
D
= 5V, R
GS
= 100Ω, T = 110°C
I
T
= 4Amp pulse, T = 25°C
R
GK
= 1KΩ, T = 25°C
R
GK
= 1KΩ, T = -40°C
R
GK
= 1KΩ, T = 110°C
V
DRM
= Rated, R
GK
= 1KΩ, T = 110°C
I
G
= 10mA, I
T
= 1A, V
D
= 30V, T = 25°C
Gate trigger current
I
GT
I
T
= I
R
= 1A, R
GK
= 1KΩ, T = 25°C
Blocking voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode through a resistor, 1000 ohms or smaller, or other adequate bias is used.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116

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描述 SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
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Reach Compliance Code unknow unknow unknow unknow unknow unknow
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