SEMICONDUCTOR
NKEF550 Series
Fast Recovery Epitaxial Diode Module
RoHS
RoHS
Features
1. Short Recovery Time
36(1.42)
9(0.35)
24(0.94) 23(0.91)
23(0.91)
14(0.55)
80(3.15)
94(3.70)
All dimensions in millimeters ( inches )
3. Soft Recovery Behaviour
4. Isolation Voltage 3600V
Ordering code
34(1.42)
(1) For Fast Diode modules
(2) Maximum average forward current , A
(3) Voltage code , V ( code x 100 = / V
RRM
)
(4)
t
rr (600V=200ns , 1200V=500ns)
13(0.51)
NKEF
(1)
550
(2)
xx
(3)
ns
(4)
29(1.14)
6.3(0.25)
DIA.
3 screws M6
A
K
Electrical Characteristics
Parameter
I
F(AV)
I
F(RMS)
V
RRM
I
FSM
I
2
t
V
F
V
ISOL
Average forward current
Condition
180 half sine wave
Single side cooled , Tc=75 C
Single side cooled , Tc= 75 C
tp=10 ms V
RMS
= V
RRM
x 1.1
Max. Value
550
805
600 to 1200
4800
Unit
A
R.M.S. Forward current
Repetitive peak reverse voltage
Peak one-cycle surge
( non-repetitive forward current )
Max. Permissible surge energy
10 ms duration
V
R
= 0.6 V
RRM
115200
@ Tc=25 C
1.08
3600
0.52
1.06
200~500
l
ISOL
≤
1mA
t=1s
For power-loss calculations only
Forward conduction slope resistance
V
TO
rt
t
rr
T
stg
R
th(J-C)
Wt
T
Ω
m
ns
C
K/ W
g
Nm
Nm
Storage temperature range
Thermal resistance
Approximate weight
Busbar to module ( M 6 )
Module to heatsink ( M 6 )
A mounting compound is recommened.
Torque should be rechecked after a
period of 3 hours.
Single side cooled
-40 to 150
0.071
150
2.3~2.8
4.5~5.5
0.8(0.03)
2. Low Switching Losses
A
V
A
A
2
S
V
V
V
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