Standard SRAM, 2KX8, 100ns, CMOS, CDIP24, CERAMIC, DIP-24
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Honeywell |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP24,.6 |
| 针数 | 24 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 100 ns |
| 其他特性 | RADIATION-HARDENED SRAM |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-CDIP-T24 |
| JESD-609代码 | e0 |
| 长度 | 30.48 mm |
| 内存密度 | 16384 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 24 |
| 字数 | 2048 words |
| 字数代码 | 2000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 2KX8 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP24,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535V;38534K;883S |
| 座面最大高度 | 4.318 mm |
| 最大待机电流 | 0.00009 A |
| 最小待机电流 | 2.5 V |
| 最大压摆率 | 0.007 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 总剂量 | 1M Rad(Si) V |
| 宽度 | 15.24 mm |
| HC6216JSHCT | HC6216KCH-T | HC6216JCH-C | HC6216JCH-T | HC6216KSHCC | HC6216JSHCC | HC6216KSHCT | |
|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 2KX8, 100ns, CMOS, CDIP24, CERAMIC, DIP-24 | Standard SRAM, 2KX8, 100ns, CMOS, CDFP24, CERAMIC, FP-24 | Standard SRAM, 2KX8, 100ns, CMOS, CDIP24, CERAMIC, DIP-24 | Standard SRAM, 2KX8, 100ns, CMOS, CDIP24, CERAMIC, DIP-24 | Standard SRAM, 2KX8, 100ns, CMOS, CDFP24, CERAMIC, FP-24 | Standard SRAM, 2KX8, 100ns, CMOS, CDIP24, CERAMIC, DIP-24 | Standard SRAM, 2KX8, 100ns, CMOS, CDFP24, CERAMIC, FP-24 |
| 零件包装代码 | DIP | DFP | DIP | DIP | DFP | DIP | DFP |
| 包装说明 | DIP, DIP24,.6 | DFP, | DIP, | DIP, | DFP, FL24,.4 | DIP, DIP24,.6 | DFP, FL24,.4 |
| 针数 | 24 | 24 | 24 | 24 | 24 | 24 | 24 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 100 ns | 100 ns | 100 ns | 100 ns | 100 ns | 100 ns | 100 ns |
| 其他特性 | RADIATION-HARDENED SRAM | RADIATION-HARDENED SRAM | RADIATION-HARDENED SRAM | RADIATION-HARDENED SRAM | RADIATION-HARDENED SRAM | RADIATION-HARDENED SRAM | RADIATION-HARDENED SRAM |
| JESD-30 代码 | R-CDIP-T24 | R-CDFP-F24 | R-CDIP-T24 | R-CDIP-T24 | R-CDFP-F24 | R-CDIP-T24 | R-CDFP-F24 |
| 长度 | 30.48 mm | 15.1384 mm | 30.48 mm | 30.48 mm | 15.1384 mm | 30.48 mm | 15.1384 mm |
| 内存密度 | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 24 | 24 | 24 | 24 | 24 | 24 | 24 |
| 字数 | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words |
| 字数代码 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 |
| 可输出 | YES | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DFP | DIP | DIP | DFP | DIP | DFP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | FLATPACK | IN-LINE | IN-LINE | FLATPACK | IN-LINE | FLATPACK |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 4.318 mm | 3.175 mm | 4.318 mm | 4.318 mm | 3.175 mm | 4.318 mm | 3.175 mm |
| 最小待机电流 | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | NO | NO | YES | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | FLAT | THROUGH-HOLE | THROUGH-HOLE | FLAT | THROUGH-HOLE | FLAT |
| 端子节距 | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 15.24 mm | 10.16 mm | 15.24 mm | 15.24 mm | 10.16 mm | 15.24 mm | 10.16 mm |
| 是否无铅 | 含铅 | - | - | - | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | - | - | - | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Honeywell | Honeywell | - | Honeywell | - | Honeywell | Honeywell |
| I/O 类型 | COMMON | - | - | - | COMMON | COMMON | COMMON |
| JESD-609代码 | e0 | - | - | - | e0 | e0 | e0 |
| 输出特性 | 3-STATE | - | - | - | 3-STATE | 3-STATE | 3-STATE |
| 封装等效代码 | DIP24,.6 | - | - | - | FL24,.4 | DIP24,.6 | FL24,.4 |
| 筛选级别 | 38535V;38534K;883S | - | - | - | 38535V;38534K;883S | 38535V;38534K;883S | 38535V;38534K;883S |
| 最大待机电流 | 0.00009 A | - | - | - | 0.00009 A | 0.00009 A | 0.00009 A |
| 最大压摆率 | 0.007 mA | - | - | - | 0.007 mA | 0.007 mA | 0.007 mA |
| 端子面层 | Tin/Lead (Sn/Pb) | - | - | - | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 总剂量 | 1M Rad(Si) V | - | - | - | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V |
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