UNISONIC TECHNOLOGIES CO.,LTD
MGBR12L60
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
Preliminary
DIODE
The UTC
MGBR12L60
is a surface mount mos gatedbarrier
rectifier,it uses UTC’s advanced technology to provide customers
withlow forward voltage drop and high switching speed, etc.
FEATURES
* Low forward voltage drop
* High switching speed
SYMBOL
ORDERING INFORMATION
Package
TO-277
Pin Assignment
1
2
3
A
K
A
Packing
Tape Reel
Ordering Number
Lead Free
Halogen Free
MGBR12L60L-T27-R
MGBR12L60G-T27-R
Note: Pin Assignment: A: Anode K: Common Cathode
MGBR12L60L-T27-R
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) R: Tape Reel
(2) T27: TO-227
(3) L: Lead Free, G: Halogen Free
MARKING INFORMATION
PACKAGE
MARKING
TO-277
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R601-193.a
MGBR12L60
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load,derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
V
RM
60
V
WorkingPeak Reverse Voltage
V
RWM
60
V
Peak Repetitive Reverse Voltage
V
RRM
60
V
Average Rectified Output Current
T
C
=140°C
12
12
A
Non-Repetitive Peak Forward Surge Current 8.3ms
I
FSM
180
A
Single Half Sine-Wave Superimposed on Rated Load
Repetitive Peak Avalanche Power (1μs, 25°C)
P
ARM
5000
W
Operating Junction Temperature
T
J
-65~+150
°C
Storage Temperature
T
STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (Note 3)
PARAMETER
SYMBOL
θ
JA
θ
JC
RATINGS
73
13
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
A
=25°C,unless
otherwise specified.)
SYMBOL
V
(BR)R
MIN
60
TYP MAX UNIT
V
0.65
V
0.60
V
80
300
μA
12
40
mA
PARAMETER
Reverse Breakdown Voltage (Note 1)
TEST CONDITIONS
I
R
=0.5mA
I
F
=12A, T
J
=25°C
Forward Voltage Drop
V
FM
I
F
=12A, T
J
=125°C
V
R
=60V, T
J
=25°C
Leakage Current (Note 1)
I
RM
V
R
=60V, T
J
=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
3. Mounted on an FR4 PCB, single-sided copper, with 100 cm
2
copper pad area.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-193.a
MGBR12L60
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R601-193.a
Microchip MCU
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