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HN2A01FU-Y(T5LCK,F

产品描述Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
产品类别分立半导体    晶体管   
文件大小241KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

HN2A01FU-Y(T5LCK,F概述

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

HN2A01FU-Y(T5LCK,F规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
最大集电极电流 (IC)0.15 A
基于收集器的最大容量7 pF
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)120
JESD-30 代码R-PDSO-G6
元件数量2
端子数量6
最高工作温度125 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
功耗环境最大值0.2 W
最大功率耗散 (Abs)0.2 W
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)80 MHz
VCEsat-Max0.3 V

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HN2A01FU
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A01FU
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current : V
CEO
=
−50V,
I
C
=
−150mA
(max)
: h
FE
= 120 to 400
High h
FE
:
Excellent h
FE
linearity
h
FE
(I
C
=
−0.1mA)
/ (I
C
=
−2mA)
= 0.95 (typ.)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
−50
−50
−5
−150
−30
200
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2J1B
temperature/current/voltage and the significant change in
Weight: 6.8 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−6V,
I
C
=
−2mA
I
C
=
−100mA,
I
B
=
−10mA
V
CE
=
−10V,
I
C
=
−1mA
V
CB
=
−10V,
I
E
= 0, f = 1MH
z
Min
120
80
Typ.
−0.1
4
Max
−0.1
−0.1
400
−0.3
7
Unit
μA
μA
V
MH
z
pF
Note: h
FE
classification
Y(Y): 120 to 240, GR(G): 200 to 400
( ) marking symbol
Marking
Equivalent Circuit
(top view)
Start of commercial production
1992-01
1
2014-03-01

HN2A01FU-Y(T5LCK,F相似产品对比

HN2A01FU-Y(T5LCK,F HN2A01FU-GR(TE85LF HN2A01FU-Y(TE85L,F HN2A01FU-Y HN2A01FU-GR
描述 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon TRANS 2PNP 50V 0.15A US6-PLN TRANS 2PNP 50V 0.15A US6 TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1B, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1B, 6 PIN, BIP General Purpose Small Signal
厂商名称 Toshiba(东芝) Toshiba(东芝) - Toshiba(东芝) Toshiba(东芝)
包装说明 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 - SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown unknown - unknown unknow
最大集电极电流 (IC) 0.15 A 0.15 A - 0.15 A 0.15 A
基于收集器的最大容量 7 pF 7 pF - 7 pF 7 pF
集电极-发射极最大电压 50 V 50 V - 50 V 50 V
配置 SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) 120 200 - 120 200
JESD-30 代码 R-PDSO-G6 R-PDSO-G6 - R-PDSO-G6 R-PDSO-G6
元件数量 2 2 - 2 2
端子数量 6 6 - 6 6
最高工作温度 125 °C 125 °C - 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP - PNP PNP
功耗环境最大值 0.2 W 0.2 W - 0.2 W 0.2 W
最大功率耗散 (Abs) 0.2 W 0.2 W - 0.2 W 0.2 W
表面贴装 YES YES - YES YES
端子形式 GULL WING GULL WING - GULL WING GULL WING
端子位置 DUAL DUAL - DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER - AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON - SILICON SILICON
标称过渡频率 (fT) 80 MHz 80 MHz - 80 MHz 80 MHz
VCEsat-Max 0.3 V 0.3 V - 0.3 V 0.3 V

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