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HN2A01FU-Y(TE85L,F

产品描述TRANS 2PNP 50V 0.15A US6
产品类别半导体    分立半导体   
文件大小241KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

HN2A01FU-Y(TE85L,F概述

TRANS 2PNP 50V 0.15A US6

HN2A01FU-Y(TE85L,F规格参数

参数名称属性值
晶体管类型2 PNP(双)
电流 - 集电极(Ic)(最大值)150mA
电压 - 集射极击穿(最大值)50V
不同 Ib,Ic 时的 Vce 饱和值(最大值)300mV @ 10mA,100mA
电流 - 集电极截止(最大值)100nA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)120 @ 2mA,6V
功率 - 最大值200mW
频率 - 跃迁80MHz
工作温度125°C(TJ)
安装类型表面贴装
封装/外壳6-TSSOP,SC-88,SOT-363
供应商器件封装US6

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HN2A01FU
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A01FU
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current : V
CEO
=
−50V,
I
C
=
−150mA
(max)
: h
FE
= 120 to 400
High h
FE
:
Excellent h
FE
linearity
h
FE
(I
C
=
−0.1mA)
/ (I
C
=
−2mA)
= 0.95 (typ.)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
−50
−50
−5
−150
−30
200
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2J1B
temperature/current/voltage and the significant change in
Weight: 6.8 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−6V,
I
C
=
−2mA
I
C
=
−100mA,
I
B
=
−10mA
V
CE
=
−10V,
I
C
=
−1mA
V
CB
=
−10V,
I
E
= 0, f = 1MH
z
Min
120
80
Typ.
−0.1
4
Max
−0.1
−0.1
400
−0.3
7
Unit
μA
μA
V
MH
z
pF
Note: h
FE
classification
Y(Y): 120 to 240, GR(G): 200 to 400
( ) marking symbol
Marking
Equivalent Circuit
(top view)
Start of commercial production
1992-01
1
2014-03-01

HN2A01FU-Y(TE85L,F相似产品对比

HN2A01FU-Y(TE85L,F HN2A01FU-GR(TE85LF HN2A01FU-Y(T5LCK,F HN2A01FU-Y HN2A01FU-GR
描述 TRANS 2PNP 50V 0.15A US6 TRANS 2PNP 50V 0.15A US6-PLN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1B, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1B, 6 PIN, BIP General Purpose Small Signal
厂商名称 - Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝)
包装说明 - SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code - unknown unknown unknown unknow
最大集电极电流 (IC) - 0.15 A 0.15 A 0.15 A 0.15 A
基于收集器的最大容量 - 7 pF 7 pF 7 pF 7 pF
集电极-发射极最大电压 - 50 V 50 V 50 V 50 V
配置 - SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) - 200 120 120 200
JESD-30 代码 - R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
元件数量 - 2 2 2 2
端子数量 - 6 6 6 6
最高工作温度 - 125 °C 125 °C 125 °C 125 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 - PNP PNP PNP PNP
功耗环境最大值 - 0.2 W 0.2 W 0.2 W 0.2 W
最大功率耗散 (Abs) - 0.2 W 0.2 W 0.2 W 0.2 W
表面贴装 - YES YES YES YES
端子形式 - GULL WING GULL WING GULL WING GULL WING
端子位置 - DUAL DUAL DUAL DUAL
晶体管应用 - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 - SILICON SILICON SILICON SILICON
标称过渡频率 (fT) - 80 MHz 80 MHz 80 MHz 80 MHz
VCEsat-Max - 0.3 V 0.3 V 0.3 V 0.3 V

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