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IS61SP25616-133TQI: 产品描述Cache SRAM, 256KX16, 4ns, CMOS, PQFP100, TQFP-100; 产品类别存储存储; 文件大小118KB，共15页; 制造商Integrated Silicon Solution ( ISSI )

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IS61SP25616-133TQI概述

Cache SRAM, 256KX16, 4ns, CMOS, PQFP100, TQFP-100

IS61SP25616-133TQI规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	QFP
包装说明	TQFP-100
针数	100
Reach Compliance Code	unknown
ECCN代码	3A991.B.2.A
最长访问时间	4 ns
其他特性	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
最大时钟频率 (fCLK)	133 MHz
I/O 类型	COMMON
JESD-30 代码	R-PQFP-G100
JESD-609代码	e0
长度	20 mm
内存密度	4194304 bit
内存集成电路类型	CACHE SRAM
内存宽度	16
功能数量	1
端子数量	100
字数	262144 words
字数代码	256000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	256KX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装等效代码	QFP100,.63X.87
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3.3 V
认证状态	Not Qualified
座面最大高度	1.6 mm
最大待机电流	0.02 A
最小待机电流	3.14 V
最大压摆率	0.18 mA
最大供电电压 (Vsup)	3.63 V
最小供电电压 (Vsup)	3.135 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	14 mm

IS61SP25616-133TQI相似产品对比

	IS61SP25616-133TQI	IS61SP25618-133TQ	IS61SP25618-133TQI	IS61SP25618-166TQ	IS61SP25616-133B	IS61SP25616-150B	IS61SP25618-150TQ	IS61SP25618-150TQI	IS61SP25618-133B	IS61SP25618-5B
描述	Cache SRAM, 256KX16, 4ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 256KX18, 4ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 256KX18, 4ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 256KX18, 3.5ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 256KX16, 4ns, CMOS, PBGA119, PLASTIC, BGA-119	Cache SRAM, 256KX16, 3.8ns, CMOS, PBGA119, PLASTIC, BGA-119	Cache SRAM, 256KX18, 3.8ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 256KX18, 3.8ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 256KX18, 4ns, CMOS, PBGA119, PLASTIC, BGA-119	Cache SRAM, 256KX18, 5ns, CMOS, PBGA119, PLASTIC, BGA-119
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	QFP	QFP	QFP	QFP	BGA	BGA	QFP	QFP	BGA	BGA
包装说明	TQFP-100	TQFP-100	TQFP-100	TQFP-100	PLASTIC, BGA-119	PLASTIC, BGA-119	TQFP-100	TQFP-100	PLASTIC, BGA-119	PLASTIC, BGA-119
针数	100	100	100	100	119	119	100	100	119	119
Reach Compliance Code	unknown	compliant	compliant	compli	unknow	unknow	compli	compli	compli	compli
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	4 ns	4 ns	4 ns	3.5 ns	4 ns	3.8 ns	3.8 ns	3.8 ns	4 ns	5 ns
其他特性	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
最大时钟频率 (fCLK)	133 MHz	133 MHz	133 MHz	166 MHz	133 MHz	150 MHz	150 MHz	150 MHz	133 MHz	100 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PBGA-B119	R-PBGA-B119	R-PQFP-G100	R-PQFP-G100	R-PBGA-B119	R-PBGA-B119
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	20 mm	20 mm	20 mm	20 mm	22 mm	22 mm	20 mm	20 mm	22 mm	22 mm
内存密度	4194304 bit	4718592 bit	4718592 bit	4718592 bi	4194304 bi	4194304 bi	4718592 bi	4718592 bi	4718592 bi	4718592 bi
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	16	18	18	18	16	16	18	18	18	18
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	100	100	100	100	119	119	100	100	119	119
字数	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
字数代码	256000	256000	256000	256000	256000	256000	256000	256000	256000	256000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	85 °C	70 °C	70 °C	70 °C	70 °C	85 °C	70 °C	70 °C
组织	256KX16	256KX18	256KX18	256KX18	256KX16	256KX16	256KX18	256KX18	256KX18	256KX18
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	LQFP	LQFP	LQFP	BGA	BGA	LQFP	LQFP	BGA	BGA
封装等效代码	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	BGA119,7X17,50	BGA119,7X17,50	QFP100,.63X.87	QFP100,.63X.87	BGA119,7X17,50	BGA119,7X17,50
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY	GRID ARRAY	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY	GRID ARRAY
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	240	240	240	NOT SPECIFIED	NOT SPECIFIED	240	240	240	240
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.6 mm	1.6 mm	1.6 mm	2.41 mm	2.41 mm	1.6 mm	1.6 mm	2.41 mm	2.41 mm
最大待机电流	0.02 A	0.015 A	0.02 A	0.015 A	0.015 A	0.015 A	0.015 A	0.02 A	0.015 A	0.015 A
最小待机电流	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V
最大压摆率	0.18 mA	0.17 mA	0.18 mA	0.21 mA	0.17 mA	0.19 mA	0.19 mA	0.2 mA	0.17 mA	0.16 mA
最大供电电压 (Vsup)	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V
最小供电电压 (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	BALL	BALL	GULL WING	GULL WING	BALL	BALL
端子节距	0.65 mm	0.65 mm	0.65 mm	0.65 mm	1.27 mm	1.27 mm	0.65 mm	0.65 mm	1.27 mm	1.27 mm
端子位置	QUAD	QUAD	QUAD	QUAD	BOTTOM	BOTTOM	QUAD	QUAD	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	30	30	30	NOT SPECIFIED	NOT SPECIFIED	30	30	30	30
宽度	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
是否无铅	-	含铅	含铅	含铅	-	-	含铅	含铅	含铅	含铅

IS61SP25616-133TQI

IS61SP25616-133TQI概述

IS61SP25616-133TQI规格参数

IS61SP25616-133TQI相似产品对比

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