IR1167(A,B)S
SMARTRECTIFIER
TM
CONTROL IC
Features
Secondary side high speed SR controller
DCM, CrCM and CCM flyback topologies
200 V proprietary IC technology
Max 500 KHz switching frequency
Anti-bounce logic and UVLO protection
7 A peak turn off drive current
Micropower start-up & ultra low quiescent current
10.7 / 14.5 V gate drive clamp
50ns turn-off propagation delay
Vcc range from 11.3 V to 20 V
Direct sensing of MOSFET drain voltage
Minimal component count
Simple design
Lead-free
Compatible with 1 W Standby, Energy Star, CECP, etc.
Product Summary
Topology
VD
V
OUT
I
o+
& I
o-
(typ.)
Turn on Propagation
Delay (typ.)
Turn off Propagation
Delay (typ.)
IR1167A
IR1167B
Flyback
200 V
10.7 V
14.5 V
+2 A / -7 A
60 ns
40 ns
Package Options
Typical Applications
LCD & PDP TV, Telecom SMPS,
adapters, ATX SMPS, Server SMPS
AC-DC
8-Lead SOIC
Ordering Information
Standard Pack
Base Part Number
IR1167AS
SOIC8N
IR1167BS
Package Type
Form
Tape and Reel
Tape and Reel
Quantity
2500
2500
IR1167ASTRPBF
IR1167BSTRPBF
Complete Part Number
1
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© 2013 International Rectifier
Nov 6, 2013
IR1167(A,B)S
Typical Connection Diagram
Vin
Rs
XFM
Cs
1
Ci
2
3
RMOT
4
Rdc
U1
VCC
OVT
MOT
EN
VGATE
GND
VS
VD
8
7
6
5
Rg
Cdc
Co
IR1167(A,B)S
IR11671
Rtn
Q1
2
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Nov 6, 2013
IR1167(A,B)S
Table of Contents
Ordering Information
Description
Absolute Maximum Ratings
Electrical Characteristics
Functional Block Diagram
Lead Definitions
Lead Assignments
Detailed Pin Description
Application Information and Additional Details
Package Details
Tape and Reel Details
Part Marking Information
Qualification Information
Page
1
4
5
6
8
9
9
10
11
22
23
24
25
3
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© 2013 International Rectifier
Nov 6, 2013
IR1167(A,B)S
Description
IR1167S is a smart secondary side driver IC designed to drive N-Channel power MOSFETs used as synchronous
rectifiers in isolated Flyback converters. The IC can control one or more paralleled N-MOSFETs to emulate the
behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of
the current and turn the power switch on and off in proximity of the zero current transition. Ruggedness and noise
immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow
reliable operation in continuous, discontinuous and critical current mode operation and both fixed and variable
frequency modes.
4
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© 2013 International Rectifier
Nov 6, 2013
IR1167(A,B)S
Absolute Maximum Ratings
Stress beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these conditions are not implied. All
voltages are absolute voltages referenced to GND. Thermal resistance and power dissipation are measured under
board mounted and still air conditions.
Max.
Units
Supply Voltage
20
Enable Voltage
20
Cont. Drain Sense Voltage
V
D
200
V
Pulse Drain Sense Voltage
V
D
200
Source Sense Voltage
V
S
20
Gate Voltage
V
GATE
20
Operating Junction Temperature
T
J
150
°C
Storage Temperature
T
S
150
Thermal Resistance
R
θJA
128
°C/W
Package Power Dissipation
P
D
970
mW
ESD Protection
V
ESD
2
kV
Switching Frequency
fsw
500
kHz
†
Per EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series
Parameters
Symbol
V
CC
V
EN
Min.
-0.3
-0.3
-3
-5
-3
-0.3
-40
-55
Remarks
V
CC
=20V, Gate off
SOIC-8
SOIC-8, T
AMB
=25°C
Human Body Model
resistor).
†
5
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© 2013 International Rectifier
Nov 6, 2013