DISCRETE SEMICONDUCTORS
DATA SHEET
BFR30; BFR31
N-channel field-effect transistors
Product specification
Supersedes data of April 1991
File under Discrete Semiconductors, SC07
1997 Dec 05
Philips Semiconductors
Product specification
N-channel field-effect transistors
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
•
Low level general purpose amplifiers in thick and
thin-film circuits.
PINNING - SOT23
PIN
1
2
3
Note
1. Drain and source are interchangeable.
SYMBOL
d
s
g
DESCRIPTION
drain
(1)
source
(1)
gate
1
Top view
2
handbook, halfpage
BFR30; BFR31
3
d
s
g
MAM385
Marking codes:
BFR30: M1p.
BFR31: M2p.
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
QUICK REFERENCE DATA
SYMBOL
V
DS
V
GSO
P
tot
I
DSS
PARAMETER
drain-source voltage
gate-source voltage
total power dissipation
drain current
BFR30
BFR31
y
fs
common-source transfer admittance
BFR30
BFR31
I
D
= 1 mA; V
DS
= 10 V; f = 1 kHz
1
1.5
4
4.5
mS
mS
open drain
T
amb
≤
40
°C
V
GS
= 0; V
DS
= 10 V
4
1
10
5
mA
mA
CONDITIONS
−
−
−
MIN.
MAX.
±25
−25
250
UNIT
V
V
mW
1997 Dec 05
2
Philips Semiconductors
Product specification
N-channel field-effect transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
DGO
V
GSO
I
D
I
G
P
tot
T
stg
T
j
Note
1. Mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PARAMETER
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
T
amb
≤
40
°C;
note 1; see Fig.2
open source
open drain
CONDITIONS
−
−
−
−
−
−
−65
−
MIN.
BFR30; BFR31
MAX.
±25
−25
−25
10
5
250
+150
150
V
V
V
UNIT
mA
mA
mW
°C
°C
VALUE
430
UNIT
K/W
handbook, halfpage
300
MDA245
Ptot
(mW)
200
100
0
0
40
80
120
200
160
Tamb (°C)
Fig.2 Power derating curve.
1997 Dec 05
3
Philips Semiconductors
Product specification
N-channel field-effect transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
GSS
I
DSS
PARAMETER
gate cut-off current
drain current
BFR30
BFR31
V
GS
gate-source voltage
BFR30
BFR31
V
GS
gate-source voltage
BFR30
BFR31
V
GSoff
gate-source cut-off voltage
BFR30
BFR31
y
fs
common-source transfer admittance
BFR30
BFR31
y
fs
common-source transfer admittance
BFR30
BFR31
y
os
common source output admittance
BFR30
BFR31
y
os
common source output admittance
BFR30
BFR31
C
is
input capacitance
V
DS
= 10 V; f = 1 MHz
I
D
= 1 mA
I
D
= 0.2 nA
C
rs
feedback capacitance
V
DS
= 10 V; f = 1 MHz; T
amb
= 25
°C
I
D
= 1 mA
I
D
= 200
µA
V
n
equivalent input noise voltage
I
D
= 200
µA;
V
DS
= 10 V;
B = 0.6 to 100 Hz
−
−
−
−
−
I
D
= 200
µA;
V
DS
= 10 V; f = 1 kHz
−
−
I
D
= 1 mA; V
DS
= 10 V; f = 1 kHz
−
−
I
D
= 200
µA;
V
DS
= 10 V; f = 1 kHz;
T
amb
= 25
°C
I
D
= 1 mA; V
DS
= 10 V; f = 1 kHz;
T
amb
= 25
°C
I
D
= 0.5 nA; V
DS
= 10 V
−
−
1
I
D
= 50
µA;
V
DS
= 10 V
−
−
I
D
= 1 mA; V
DS
= 10 V
CONDITIONS
V
DS
= 0; V
GS
=
−10
V
V
GS
= 0; V
DS
= 10 V
4
1
−
BFR30; BFR31
MIN.
MAX.
−0.2
10
5
−3
−1.3
−4
−2
−5
−2.5
4
4.5
−
−
40
25
20
15
4
4
1.5
1.5
0.5
UNIT
nA
mA
mA
V
V
V
V
V
V
mS
mS
mS
mS
µS
µS
µS
µS
pF
pF
pF
pF
µV
−0.7
0
1.5
0.5
0.75
1997 Dec 05
4
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
handbook, halfpage
10
MDA657
handbook, halfpage
10
MDA658
ID
(mA)
8
max
6
ID
(mA)
8
6
VGS = 0 V
4
typ
2
min
0
−4
−3
−2
−1
4
−0.5
−1.0
2
−1.5
−2.0
0
0
VGS (V)
0
2
4
6
8
10
VDS (V)
BFR30.
V
DS
= 10 V; T
j
= 25
°C.
BFR30.
T
j
= 25
°C.
Fig.3 Input characteristics.
Fig.4 Output characteristics; typical values.
5
handbook, halfpage
ID
(mA)
4
MDA659
5
handbook, halfpage
ID
(mA)
4
MDA660
VGS = 0 V
max
3
3
−0.2
−0.4
−0.6
1
−0.8
−1
−1.2
0
0
2
4
6
8
10
VDS (V)
2
typ
1
2
0
−5
min
−4
−3
−2
−1
0
VGS (V)
BFR31.
V
DS
= 10 V; T
j
= 25
°C.
BFR31.
T
j
= 25
°C.
Fig.5 Input characteristics.
Fig.6 Output characteristics; typical values.
1997 Dec 05
5
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