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UP1753L-AA3-T

产品描述Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE PACKAGE-4
产品类别分立半导体    晶体管   
文件大小91KB,共4页
制造商UNISONIC TECHNOLOGIES CO.,LTD
官网地址http://www.unisonic.com.tw/
标准
下载文档 详细参数 选型对比 全文预览

UP1753L-AA3-T概述

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE PACKAGE-4

UP1753L-AA3-T规格参数

参数名称属性值
是否Rohs认证符合
厂商名称UNISONIC TECHNOLOGIES CO.,LTD
包装说明LEAD FREE PACKAGE-4
针数4
Reach Compliance Codecompliant
ECCN代码EAR99
最大集电极电流 (IC)6 A
集电极-发射极最大电压100 V
配置SINGLE
最小直流电流增益 (hFE)100
JESD-30 代码R-PDSO-G4
元件数量1
端子数量4
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
表面贴装YES
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz

UP1753L-AA3-T文档预览

UNISONIC TECHNOLOGIES CO., LTD
UP1753
HIGH CURRENT
LOW V
CE(SAT)
TRANSISTOR
DESCRIPTION
The UTC
UP1753
is specially designed to have high current and
low V
CE(SAT)
to suit for power amplifier application and power
switching application.
NPN SILICON TRANSISTOR
1
FEATURES
*V
CE(SAT)
typ is below 300mV at 5A
* Max continuous current 6 A
* BV
CEO
is 100V minimum
SOT-223
*Pb-free plating product number: UP1753L
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UP1753-AA3-R
UP1753L-AA3-R
UP1753-AA3-T
UP1753L-AA3-T
Package
SOT-223
SOT-223
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tube
UP1753L-AA3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel, T: Tube
(2) AA3: SOT-223
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R207-017,B
UP1753
ABSOLUTE MAXIMUM RATINGS
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
200
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
6
V
Peak Pulse Current
I
CM
10
A
Continuous Collector Current
I
C
6
A
Power Dissipation (Ta =25℃)
P
D
3
W
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
Ta= 25℃ (unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CER
I
EBO
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
h
FE
TEST CONDITIONS
I
C
=100µA
I
C
=10mA (Note1)
I
E
=100µA
V
CB
=150V
V
CE
=150V, R≤1KΩ
V
EB
=6V
I
C
=0.1A, I
B
=5mA (Note1)
I
C
=2A, I
B
=100mA (Note1)
I
C
=5A, I
B
=500mA (Note1)
I
C
=5A, I
B
=500mA (Note1)
I
C
=5A, V
CE
=2V (Note1)
I
C
=10mA, V
CE
=2V
I
C
=2A, V
CE
=2V (Note1)
I
C
=4A, V
CE
=2V (Note1)
I
C
=10A, V
CE
=2V (Note1)
MIN
200
100
6
TYP
300
120
8
MAX UNIT
V
V
V
10
nA
10
nA
10
nA
mV
50
mV
150
mV
330
1250 mV
1100 mV
300
100
100
50
20
200
200
100
100
38
50
1600
Transition Frequency
Output Capacitance
f
T
I
C
=100mA, V
CE
=10V f=50MHz
V
CB
=10V, f=1MHz
C
ob
t
ON
I
C
=1A, V
CC
=10V
Switching Times
I
B1
=I
B2
=100mA
t
OFF
Note: 1.Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%,
MHz
pF
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R207-017,B
UP1753
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector-Emitter Saturation Voltagevs.
Collector Current
Collector-Emitter Saturation Voltage,
V
CE(SAT)
(V)
DC Current Gain vs. Collector Current
1.6
DC Current Gain, h
FE
0.8
0.6
I
C
/I
B
=10
0.4
I
C
/I
B
=50
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
=1V
V
CE
=5V
0.2
0
0.01
0.1
1
10
100
0
0.01
0.1
1
10
100
Collector Current, I
C
(A)
Collector Current, I
C
(A)
Base-Emitter Saturation vs. Collector
Current
Base-Emitter Saturation, V
BE(SAT)
(V)
Base-Emitter Turn-On Voltage vs.
Collector Current
1.2
Base-Emitter, V
BE
(V)
2.0
1.5
I
C
/I
B
=10
1.0
I
C
/I
B
=50
0.5
0.001
0.01
0.1
1
10
100
Collector Current, I
C
(A)
1.0
V
CE
=1V
0.8
0.6
0.4
0.001
0.01
0.1
1
10
100
Collector Current, I
C
(A)
Safe Operating Area
10
Collector Current , I
C
(A)
1
0.1
DC
1s
100ms
10ms
1ms
300µ
Ta=25℃
0.01
1
10
100
0.1
Collector-Emitter Voltage, V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R207-017,B
UP1753
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R207-017,B

UP1753L-AA3-T相似产品对比

UP1753L-AA3-T UP1753-AA3-T
描述 Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE PACKAGE-4 Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
包装说明 LEAD FREE PACKAGE-4 SOT-223, 4 PIN
针数 4 4
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 6 A 6 A
集电极-发射极最大电压 100 V 100 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 100 100
JESD-30 代码 R-PDSO-G4 R-PDSO-G4
元件数量 1 1
端子数量 4 4
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN
表面贴装 YES YES
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz
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